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| MITSUBISHI SEMICONDUCTOR HIGH-SPEED SWITCHING THYRISTOR CR3AMZ LOW POWER, STROBE USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE CR3AMZ OUTLINE DRAWING 1.00.5 Dimensions in mm TYPE NAME VOLTAGE CLASS 8 MAX 4 MAX 12 MIN 1.20.1 0.8 0.8 2.5 2.5 4.5 MAX 1.5 MIN 0.5 123 1.550.1 10 MAX 2 1 CATHODE 2 ANODE 3 GATE 1 * IT (AV) ........................................................................ 0.4A * VDRM ....................................................................... 400V * IGT ..........................................................................30mA APPLICATION Automatic strobe flasher 3 TO-202 MAXIMUM RATINGS Symbol VRRM VRSM VDRM VDSM Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage Repetitive peak off-state voltage Non-repetitive peak off-state voltage Voltage class 8 400 480 400 480 Unit V V V V Symbol IT (AV) ITRM PGM PG (AV) VFGM IFGM Tj Tstg -- Parameter Average on-state current Repetitive peak on-state current V1 Peak gate power dissipation Average gate power dissipation Peak gate forward voltage Peak gate forward current Junction temperature Storage temperature Weight Typical value Conditions Commercial frequency, sine half wave, 180 conduction, CM=700F with discharge current Ratings 0.4 200 0.5 0.1 6 0.5 -40 ~ +125 -40 ~ +125 1.1 Unit A A W W V A C C g V1. Refer to sections 1, 2 on STROBE FLASHER APPLICATION shown in the last sheet for CR3JM. Feb.1999 MITSUBISHI SEMICONDUCTOR HIGH-SPEED SWITCHING THYRISTOR CR3AMZ LOW POWER, STROBE USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE ELECTRICAL CHARACTERISTICS Symbol IRRM IDRM VTM VGT VGD IGT Cc Parameter Repetitive peak reverse current Repetitive peak off-state current On-state voltage Gate trigger voltage Gate non-trigger voltage Gate trigger current Commutating capacitor V2 Tj=25C, VRRM applied Tj=25C, VDRM applied Ta=25C, ITM=3A, Instantaneous value Tj=25C, VD=6V, RL=6 Tj=125C, VD=1/2VDRM Tj=25C, VD=6V, RL=6 CM=700F, VCM=350V, ITM=200A, L=25H, Ta=25C Test conditions Limits Min. -- -- -- -- 0.1 -- -- Typ. -- -- -- -- -- -- -- Max. 0.1 0.1 2.0 1.5 -- 30 2.2 Unit mA mA V V V mA F V2. Refer to section 3 on STROBE FLASHER APPLICATION shown in the last sheet for CR3JM. Fig 1. TEST CIRCUIT FOR COMMUTATING CAPACITOR L 15k VCM + CM - CC 10 CR3AMZ-8 IT 1k 10k 0.1 470 0.047 CM = 700F VCM = 350V ITM = 200A L = 25H Ta = 25C CONDUCTION TIME : arbitarity PERFORMANCE CURVES MAXIMUM ON-STATE CHARACTERISTICS 103 7 5 3 Ta = 25C 2 102 7 5 3 2 101 7 5 3 2 100 0 1 2 3 4 5 6 7 8 9 10 GATE CHARACTERISTICS 101 7 5 3 2 100 7 5 3 2 10-1 7 5 3 2 VFGM = 6V PGM = 0.5W ON-STATE CURRENT (A) GATE VOLTAGE (V) VGT = 1.5V IGT = 30mA (Tj = 25C) VGD = 0.1V PG(AV) = 0.1W IFGM = 0.5A 10-2 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 GATE CURRENT (mA) ON-STATE VOLTAGE (V) Feb.1999 MITSUBISHI SEMICONDUCTOR HIGH-SPEED SWITCHING THYRISTOR CR3AMZ LOW POWER, STROBE USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE GATE TRIGGER VOLTAGE (V) GATE TRIGGER VOLTAGE VS. JUNCTION TEMPERATURE 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 -20 -10 0 10 20 30 40 50 60 70 80 JUNCTION TEMPERATURE (C) TYPICAL EXAMPLE GATE TRIGGER CURRENT (Tj=tC) GATE TRIGGER CURRENT (Tj=25C) 103 7 5 4 3 2 102 7 5 4 3 2 100 (%) TYPICAL EXAMPLE 101 -20 -10 0 10 20 30 40 50 60 70 80 JUNCTION TEMPERATURE (C) GATE TRIGGER CURRENT VS. GATE CURRENT PULSE WIDTH 104 7 TYPICAL EXAMPLE 5 3 2 103 7 5 3 2 102 7 5 3 2 101 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 GATE CURRENT PULSE WIDTH (s) 100 (%) COMMUTATING CHARACTERISTICS 1000 900 IG 0 tw t MAIN CAPACITOR (F) 800 700 600 CC=1.7F CC=1.8F CC=1.9F CC=2.0F CC=2.1F CC=2.2F CC=2.3F GATE TRIGGER CURRENT (tw) GATE TRIGGER CURRENT (DC) 500 400 300 200 100 VCM = 350V Ta = 25C L = 25H SEE FIG.1 0 120 140 160 180 200 220 PEAK ON-STATE CURRENT (A) 2.5 COMMUTATING CAPACITOR (F) 100 (%) COMMUTATING CAPACITOR VS. PEAK ON-STATE CURRENT VCM = 350V 2.4 CM = 700F 2.3 L = 25H Ta = 25C 2.2 SEE FIG.1 2.1 2.0 1.9 1.8 1.7 1.6 1.5 100 120 140 160 180 200 COMMUTATING CAPACITOR VS. AMBIENT TEMPERATURE 180 170 160 150 140 130 120 110 100 90 80 0 10 20 30 40 50 60 70 80 90 100 AMBIENT TEMPERATURE (C) TYPICAL EXAMPLE VCM = 350V ITM = 200A CM = 700F L = 25H PEAK ON-STATE CURRENT (A) COMMUTATING CAPACITOR (Ta = tC) COMMUTATING CAPACITOR (Ta = 25C) Feb.1999 MITSUBISHI SEMICONDUCTOR HIGH-SPEED SWITCHING THYRISTOR CR3AMZ LOW POWER, STROBE USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE HOLDING CURRENT VS. JUNCTION TEMPERATURE 103 7 5 3 2 102 7 5 3 2 101 7 5 3 2 VD = 12V RGK = 1k 100 (%) BREAKOVER VOLTAGE VS. JUNCTION TEMPERATURE 200 180 160 TYPICAL EXAMPLE RGK = 1k HOLDING CURRENT (mA) ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, JUNCTION TEMPERATURE (C) BREAKOVER VOLTAGE (Tj = tC) BREAKOVER VOLTAGE (Tj = 25C) 140 120 100 80 60 40 20 0 -60 -40 -20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (C) 100 -60 -40 -20 0 20 40 60 80 100 120 140 PEAK OFF-STATE CURRENT VS. JUNCTION TEMPERATURE PEAK OFF-STATE CURRENT (A) PEAK REVERSE CURRENT (A) PEAK REVERSE CURRENT VS. JUNCTION TEMPERATURE 103 7 5 3 2 102 7 5 3 2 101 7 5 3 2 VR = 400V RGK = 1k 103 7 5 3 2 102 7 5 3 2 101 7 5 3 2 VD = 400V RGK = 1k 100 -60 -40 -20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (C) ,,,,,,,, ,,,,,,,, ,,,,,,,, ,,,,,,,, ,,,,,,,, ,,,,,,,, ,,,,,,,, ,,,,,,,, ,,,,,,,, ,,,,,,,, ,,,,,,,, ,,,,,,,, 100 -60 -40 -20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (C) ,,,,,,,, ,,,,,,,, ,,,,,,,, ,,,,,,,, ,,,,,,,, ,,,,,,,, ,,,,,,,, ,,,,,,,, ,,,,,,,, ,,,,,,,, ,,,,,,,, ,,,,,,,, Feb.1999 |
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