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| MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MCR225FP/D Silicon Controlled Rectifiers Reverse Blocking Thyristors . . . designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supply crowbar circuits. * Glass Passivated Junctions with Center Gate Fire for Greater Parameter Uniformity and Stability * Small, Rugged, Thermowatt Constructed for Low Thermal Resistance, High Heat Dissipation and Durability * Blocking Voltage to 800 Volts * 300 A Surge Current Capability * Insulated Package Simplifies Mounting MCR225FP Series ISOLATED SCRs 25 AMPERES RMS 50 thru 800 VOLTS G A K CASE 221C-02 STYLE 2 MAXIMUM RATINGS (TJ = 25C unless otherwise noted.) Rating Peak Repetitive Forward and Reverse Blocking Voltage(1) (TJ = -40 to +125C, Gate Open) MCR225-2FP MCR225-4FP MCR225-6FP MCR225-8FP MCR225-10FP On-State RMS Current (TC = +70C) Full Cycle Sine Wave 50 to 60 Hz(2) Peak Non-repetitive Surge Current (One Full Cycle, 60 Hz, TC = +70C) Preceded and followed by rated current Circuit Fusing (t = 8.3 ms) Peak Gate Power (TC = +70C, Pulse Width = 10 s) Average Gate Power (TC = +70C, t = 8.3 ms) Peak Gate Current (TC = +70C, Pulse Width = 10 s) RMS Isolation Voltage (TA = 25C, Relative Humidity Operating Junction Temperature Range Storage Temperature Range Symbol VDRM VRRM 50 200 400 600 800 IT(RMS) ITSM I2t PGM PG(AV) 25 300 375 20 0.5 2 1500 -40 to +125 -40 to +125 Amps Amps A2s Watts Watt Amps Volts C C Value Unit Volts p 20%) IGM V(ISO) TJ Tstg 1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. 2. The case temperature reference point for all TC measurements is a point on the center lead of the package as close as possible to the plastic body. Motorola Thyristor Device Data (c) Motorola, Inc. 1995 1 MCR225FP Series THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Thermal Resistance, Case to Sink Thermal Resistance, Junction to Ambient Symbol RJC RCS RJA Max 1.5 2.2 (typ) 60 Unit C/W C/W C/W ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted.) Characteristic Peak Forward Blocking Current (VD = Rated VDRM, Gate Open) Peak Reverse Blocking Current (VR = Rated VRRM) Forward "On" Voltage(1) (ITM = 50 A) Gate Trigger Current (Continuous dc) (Anode Voltage = 12 Vdc, RL = 100 Ohms) Gate Trigger Voltage (Continuous dc) (Anode Voltage = 12 Vdc, RL = 100 Ohms) Gate Non-Trigger Voltage (Anode Voltage = Rated VDRM, RL = 100 Ohms, TJ = 125C) Holding Current (Anode Voltage = 12 Vdc) Turn-On Time (ITM = 25 A, IGT = 40 mAdc) Turn-Off Time (VDRM = Rated Voltage) (ITM = 25 A, IR = 25 A) (ITM = 25 A, IR = 25 A, TJ = 125C) Critical Rate-of-Rise of Off-State Voltage (Gate Open, VD = Rated VDRM, Exponential Waveform) 1. Pulse Test: Pulse Width = 1 ms, Duty Cycle TJ = 25C TJ = 125C IRRM TJ = 125C VTM IGT VGT VGD IH tgt tq -- -- dv/dt -- 15 35 100 -- -- -- V/s -- -- -- 0.2 -- -- -- -- 0.8 -- 20 1.5 1.8 40 1.5 -- 40 -- Volts mA Volts Volts mA s s Symbol IDRM -- -- -- -- -- -- 10 2 2 Min Typ Max Unit A mA mA p 2%. TYPICAL CHARACTERISTICS 130 TC, MAXIMUM CASE TEMPERATURE ( C) P(AV) , AVERAGE POWER (WATTS) 32 180 60 90 dc 120 = CONDUCTION ANGLE 24 = CONDUCTION ANGLE = 30 110 16 TJ = 125C 100 = 30 60 90 180 dc 90 80 0 8 0 4 8 12 16 20 0 4 8 12 16 20 IT(AV), ON-STATE FORWARD CURRENT (AMPS) IT(AV), AVERAGE ON-STATE FORWARD CURRENT (AMPS) Figure 1. Average Current Derating Figure 2. Maximum On-State Power Dissipation 2 Motorola Thyristor Device Data MCR225FP Series 100 70 50 30 125C 20 i F , INSTANTANEOUS FORWARD CURRENT (AMPS) I TSM , PEAK SURGE CURRENT (AMP) 300 1 CYCLE 275 250 225 TC = 85C f = 60 Hz 200 SURGE IS PRECEDED AND FOLLOWED BY RATED CURRENT 175 1 2 3 4 6 8 10 NUMBER OF CYCLES 25C 10 7 5 3 2 Figure 4. Maximum Non-Repetitive Surge Current +I 1 0.7 0.5 0.3 -V 0.2 REVERSE AVALANCHE REGION VRRM -I REVERSE BLOCKING REGION IT IH IDRM VT FORWARD BREAKOVER POINT +V IRRM 0.1 0 0.4 0.8 1.2 1.6 2 vF, INSTANTANEOUS VOLTAGE (VOLTS) 2.4 2.8 VDRM FORWARD BLOCKING REGION Figure 3. Maximum Forward Voltage Figure 5. Characteristics and Symbols r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 0.1 0.2 0.3 0.5 1 2 3 5 10 20 30 50 t, TIME (ms) 100 200 300 500 1.0 k 2.0 k 3.0 k 5.0 k 10 k ZJC(t) = RJC * r(t) Figure 6. Thermal Response Motorola Thyristor Device Data 3 MCR225FP Series 2 VD = 12 V VGT , GATE TRIGGER VOLTAGE (NORMALIZED) I GT, GATE TRIGGER CURRENT (NORMALIZED) 2 VD = 12 V 1.6 1.6 1.2 1.2 0.8 0.8 0.4 0 -60 0.4 0 -60 -40 -20 0 20 40 60 80 100 120 140 -40 -20 0 20 40 60 80 100 120 140 TJ, JUNCTION TEMPERATURE (C) TJ, JUNCTION TEMPERATURE (C) Figure 7. Gate Trigger Current versus Temperature 2 IH , HOLDING CURRENT (NORMALIZED) Figure 8. Gate Trigger Voltage versus Temperature VD = 12 V 1.6 1.2 0.8 0.4 0 -60 -40 -20 0 20 40 60 80 100 120 140 TJ, JUNCTION TEMPERATURE (C) Figure 9. Holding Current versus Temperature 4 Motorola Thyristor Device Data MCR225FP Series PACKAGE DIMENSIONS -B- P -T- F N E C S SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. LEAD DIMENSIONS UNCONTROLLED WITHIN DIMENSION Z. DIM A B C D E F G H J K L N P Q R S Z INCHES MIN MAX 0.680 0.700 0.388 0.408 0.175 0.195 0.025 0.040 0.340 0.355 0.140 0.150 0.100 BSC 0.110 0.155 0.018 0.028 0.500 0.550 0.045 0.070 0.049 --- 0.270 0.290 0.480 0.500 0.090 0.120 0.105 0.115 0.070 0.090 MILLIMETERS MIN MAX 17.28 17.78 9.86 10.36 4.45 4.95 0.64 1.01 8.64 9.01 3.56 3.81 2.54 BSC 2.80 3.93 0.46 0.71 12.70 13.97 1.15 1.77 1.25 --- 6.86 7.36 12.20 12.70 2.29 3.04 2.67 2.92 1.78 2.28 H -Y- Q 123 A STYLE 2: PIN 1. CATHODE 2. ANODE 3. GATE K Z L G D 3 PL J R 0.25 (0.010) M B M Y CASE 221C-02 Motorola Thyristor Device Data 5 MCR225FP Series Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Literature Distribution Centers: USA: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. EUROPE: Motorola Ltd.; European Literature Centre; 88 Tanners Drive, Blakelands, Milton Keynes, MK14 5BP, England. JAPAN: Nippon Motorola Ltd.; 4-32-1, Nishi-Gotanda, Shinagawa-ku, Tokyo 141, Japan. ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. 6 *MCR225FP/D* Motorola Thyristor Device Data MCR225FP/D |
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