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SEMICONDUCTOR
TECHNICAL DATA
SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES
With Built-in Bias Resistors. Reduce a Quantity of Parts and Manufacturing Process. High Packing Density.
A1
KRC830E~KRC834E
EPITAXIAL PLANAR NPN TRANSISTOR
B B1
Simplify Circuit Design.
A
C
1
6 5
2
3
4
EQUIVALENT CIRCUIT
C B R1
EQUIVALENT CIRCUIT (TOP VIEW)
6 5 4
H
P P
DIM A A1 B B1 C D H J
P
MILLIMETERS _ 1.6 + 0.05 _ 1.0 + 0.05 _ 1.6 + 0.05 _ 1.2 + 0.05 0.50 _ 0.2 + 0.05 _ 0.5 + 0.05 _ 0.12 + 0.05
5
C
Q1
Q2
E
1
2
3
1. 2. 3. 4. 5. 6.
Q1 Q2 Q2 Q2 Q1 Q1
EMITTER EMITTER BASE COLLECTOR BASE COLLECTOR
TES6
MAXIMUM RATING (Ta=25
CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current
)
SYMBOL VCBO VCEO VEBO IC RATING 50 50 5 100 UNIT V V V mA CHARACTERISTIC Collector Power Dissipation Junction Temperature Storage Temperature Range * Total Raing. SYMBOL PC * Tj Tstg RATING 200 150 -55 150 UNIT mW
ELECTRICAL CHARACTERISTICS (Ta=25
CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Transition Frequency KRC830E KRC831E Input Resistor KRC832E KRC833E KRC834E
)
SYMBOL ICBO IEBO hFE VCE(sat) fT * TEST CONDITION VCB=50V, IE=0 VEB=5V, IC=0 VCE=5V, IC=1mA IC=10mA, IB=0.5mA VCE=10V, IC=5mA MIN. 120 R1 TYP. 0.1 250 4.7 10 100 22 47
Type Name
5 4
J
D
MAX. 100 100 0.3 -
UNIT nA nA
V MHz
k
Note : * Characteristic of Transistor Only. MARK SPEC
TYPE MARK KRC830E YK KRC831E YM KRC832E YN KRC833E YO KRC834E YP
Marking
6
1
2
3
2002. 7. 10
Revision No : 2
1/4
KRC830E~KRC834E
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC KRC830E KRC831E Rise Time KRC832E KRC833E KRC834E KRC830E KRC831E Switching Time Storage Time KRC832E KRC833E KRC834E KRC830E KRC831E Fall Time KRC832E KRC833E KRC834E tf tstg VO=5V VIN=5V RL=1k tr SYMBOL TEST CONDITION MIN. TYP. 0.025 0.03 0.3 0.06 0.11 3.0 2.0 6.0 4.0 5.0 0.2 0.12 2.0 0.9 1.4 MAX. S UNIT
2002. 7. 10
Revision No : 2
2/4
KRC830E~KRC834E
h FE - I C
COLLECTOR-EMITTER SATURATIN VOLTAGE VCE(sat) (V) 2k DC CURRENT GAIN h FE 1k 500 300 100 50 30
VCE =5V Ta=100 C Ta=25 C Ta=-25 C KRC830E
V CE(sat) - I C
2 1 0.5 0.3
KRC830E IC /I B =20
0.1 0.05 0.03 0.01 0.1
Ta=100 C Ta=25 C Ta=-25 C
10 0.1
0.3
1
3
10
30
100
0.3
1
3
10
30
100
COLLECTOR CURRENT I C (mA)
COLLECTOR CURRENT I C (mA)
h FE - I C
COLLECTOR-EMITTER SATURATIN VOLTAGE VCE(sat) (V) 2k DC CURRENT GAIN h FE 1k 500 300 100 50 30
V CE =5V Ta=100 C Ta=25 C Ta=-25 C KRC831E
VCE(sat) - I C
2 1 0.5 0.3 0.1 0.05 0.03 0.01 0.1
Ta=100 C Ta=25 C Ta=-25 C KRC831E IC /I B =20
10 0.1
0.3
1
3
10
30
100
0.3
1
3
10
30
100
COLLECTOR CURRENT I C (mA)
COLLECTOR CURRENT I C (mA)
h FE - I C
COLLECTOR-EMITTER SATURATIN VOLTAGE VCE(sat) (V) 2k 1k DC CURRENT GAIN h FE 500 300 100 50 30
V CE =5V Ta=100 C Ta=25 C Ta=-25 C KRC832E
VCE(sat) - I C
2 1 0.5 0.3 0.1 0.05 0.03 0.01
Ta=100 C Ta=25 C Ta=-25 C KRC832E I C /I B =20
10
0.1
0.3
1
3
10
30
100
0.1
0.3
1
3
10
30
100
COLLECTOR CURRENT I C (mA)
COLLECTOR CURRENT I C (mA)
2002. 7. 10
Revision No : 2
3/4
KRC830E~KRC834E
h FE - I C
COLLECTOR-EMITTER SATURATIN VOLTAGE VCE(sat) (V) 2k DC CURRENT GAIN h FE 1k 500 300 100 50 30
V CE =5V Ta=100 C Ta=25 C Ta=-25 C KRC833E
VCE(sat) - I C
2 1 0.5 0.3 0.1 0.05 0.03 0.01
KRC833E I C /I B =20
Ta=100 C Ta=25 C Ta=-25 C
10 0.1
0.3
1
3
10
30
100
0.1
0.3
1
3
10
30
100
COLLECTOR CURRENT I C (mA)
COLLECTOR CURRENT I C (mA)
h FE - I C
COLLECTOR-EMITTER SATURATIN VOLTAGE VCE(sat) (V) 2k DC CURRENT GAIN h FE 1k 500 300 100 50 30 10
VCE =5V Ta=100 C Ta=25 C Ta=-25 C KRC834E
V CE(sat) - I C
2 1 0.5 0.3 0.1 0.05 0.03 0.01 0.1 0.3 1 3 10 30 100
Ta=100 C Ta=25 C Ta=-25 C KRC834E I C /I B =20
0.1
0.3
1
3
10
30
100
COLLECTOR CURRENT I C (mA)
COLLECTOR CURRENT I C (mA)
2002. 7. 10
Revision No : 2
4/4

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