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| BAW 56 Surface Mount Silicon Planar Dual Small-Signal Diodes (common anode) Silizium-Planar-Doppel-Dioden fur die Oberflachenmontage (gemeinsame Anode) Nominal current - Nennstrom 2.9 0.1 0.4 3 250 mA 70 V SOT-23 (TO-236) 0.01 g see page 18 siehe Seite 18 1.1 2.5 max 0.1 Repetitive peak reverse voltage Periodische Spitzensperrspannung Plastic case Kunststoffgehause Weight approx. - Gewicht ca. 1.3 1 2 Dimensions / Mae in mm 1 = cathode 1 2 = cathode 2 3 = common / gemeinsame anode Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Maximum ratings Repetitive peak reverse voltage Periodische Spitzensperrspannung Max. average forward current Dauergrenzstrom Repetitive peak forward current Periodischer Spitzenstrom Peak forward surge current Stostrom-Grenzwert Tj = 25/C D1 + D2 f > 15 Hz tp = 1 :s tp = 1 ms tp = 1 s VRRM IFAV IFRM IFSM IFSM IFSM Tj TS Grenzwerte 70 V 250 mA 1) 450 mA 1) 2A 1A 0.5 A - 50...+ 150/C - 50...+ 150/C Operating junction temperature - Sperrschichttemperatur Storage temperature - Lagerungstemperatur Characteristics Forward voltage Durchlaspannung Tj = 25/C IF = 1 mA IF = 10 mA IF = 50 mA IF = 0.15 A VR = VRRM VR = VRRM VR = 25 V VF VF VF VF IR IR IR Kennwerte < 715 mV < 855 mV < 1.0 V < 1.25 V < 2.5 :A < 50 :A < 30 :A Leakage current Sperrstrom Tj = 25/C Tj = 150/C Tj = 150/C ) Mounted on P.C. board with 25 mm2 copper pads at each terminal Montage auf Leiterplatte mit 25 mm2 Kupferbelag (Lotpad) an jedem Anschlu 04.02.2003 1 1 BAW 56 Junction capacitance Sperrschichtkapazitat Reverse recovery time Sperrverzug VF = VR = 0 V f = 1 MHz IF = 10 mA uber / through IR = 10 mA bis / to IR = 1 mA, UR = 6 V, RL = 100 S Ctot trr < 1.5 pF < 6 ns Thermal resistance junction to ambient air Warmewiderstand Sperrschicht - umgebende Luft RthA < 320 K/W 1) 2 F:\Data\WP\DatBlatt\Einzelblatter\BAW56.wpd |
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