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| SI4927DY Vishay Siliconix P-Channel 30-V (D-S) Battery Switch PRODUCT SUMMARY VDS (V) -30 rDS(on) (W) 0.028 @ VGS = -10 V 0.045 @ VGS = -4.5 V ID (A) "7.4 "5.8 S1 S2 SO-8 S1 G1 S2 G2 1 2 3 4 Top View D1 D1 D2 D2 8 7 6 5 D D D D G1 G2 P-Channel MOSFET P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a, b 150 C) Pulsed Drain Current Continuous Source Current (Diode Conduction)a, b Maximum Power Dissipationa, b Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg Limit -30 "20 "7.4 "5.8 "40 -2.1 2.5 1.6 -55 to 150 Unit V A W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Notes a. Surface Mounted on FR4 Board. b. t = v 10 sec. For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 70808 S-59519--Rev. B, 04-Sep-98 www.vishay.com S FaxBack 408-970-5600 t = v 10 sec Steady State Symbol RthJA Typical Maximum 50 Unit _C/W 75 2-1 SI4927DY Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Drain Source On State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS( ) DS(on) gfs VSD VDS = VGS, ID = -250 mA VDS = 0 V, VGS = "20 V VDS = -24 V, VGS = 0 V VDS = -24 V, VGS = 0 V, TJ = 55_C VDS w -5 V, VGS = -10 V VGS = -10 V, ID = -7.4 A VGS = -4.5 V, ID = -5.8 A VDS = -15 V, ID = -7.4 A IS = -2.1 A, VGS = 0 V -30 0.022 0.034 15 -0.73 -1.2 0.028 0.045 W S V -1 "100 -1 -25 V nA mA A Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = -2.1 A, di/dt = 100 A/ms VDD = -15 V, RL = 15 W 15 V, ID ^ -1 A, VGEN = -10 V RG = 6 W 1A 10 V, VDS = -15 V VGS = -10 V ID = -7.4 A 15 V, 10 V, 74 38 8 6.8 13 9 75 42 50 25 20 120 70 90 ns 60 nC C Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. www.vishay.com S FaxBack 408-970-5600 2-2 Document Number: 70808 S-59519--Rev. B, 04-Sep-98 SI4927DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 40 VGS = 5 thru 10 V 32 I D - Drain Current (A) I D - Drain Current (A) 32 40 Transfer Characteristics 24 4V 16 24 16 TC = 125_C 8 25_C 0 -55_C 8 3V 0 0 2 4 6 8 10 0 1 2 3 4 5 6 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.20 4000 Capacitance r DS(on) - On-Resistance ( W ) 0.16 C - Capacitance (pF) 3200 0.12 2400 Ciss 1600 Coss 0.08 VGS = 4.5 V 0.04 VGS = 10 V 800 Crss 0 0 8 16 24 32 40 0 0 6 12 18 24 30 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) 10 V GS - Gate-to-Source Voltage (V) VDS = 15 V ID = 7.4 A Gate Charge 1.6 On-Resistance vs. Junction Temperature VGS = 10 V ID = 7.4 A 8 r DS(on) - On-Resistance ( W) (Normalized) 16 24 32 40 1.4 6 1.2 4 1.0 2 0.8 0 0 8 0.6 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C) Document Number: 70808 S-59519--Rev. B, 04-Sep-98 www.vishay.com S FaxBack 408-970-5600 2-3 SI4927DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 40 0.10 On-Resistance vs. Gate-to-Source Voltage I S - Source Current (A) TJ = 150_C 10 r DS(on) - On-Resistance ( W ) 0.08 0.06 ID = 7.4 A 0.04 TJ = 25_C 0.02 1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 0 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage 0.8 ID = 250 mA 45 V GS(th) Variance (V) 0.4 Power (W) 60 Single Pulse Power 0.6 0.2 30 0.0 15 -0.2 -0.4 -50 0 -25 0 25 50 75 100 125 150 0.01 0.1 Time (sec) 1 10 30 TJ - Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 75_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 100 600 Square Wave Pulse Duration (sec) www.vishay.com S FaxBack 408-970-5600 2-4 Document Number: 70808 S-59519--Rev. B, 04-Sep-98 |
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