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| Silicon Dual Schottky Diode BAT 114-099 Features * High barrier diode for balanced mixers, phase detectors and modulators ESD: ElectroStatic Discharge sensitive device, observe handling precautions! Type BAT 114-099 Marking S7 Ordering Code (taped & reel) Q62702-A1017 Pin Configuration Package1) SOT-143 1) Dimensions see chapter Package Outlines Maximum Ratings (per diode) Parameter Reverse voltage Forward current Operation temperature Storage temperature Power dissipation, TS 70 C Symbol Limit Values 4 90 - 55 to + 150 - 55 to + 150 100 Unit V mA C C mW VR IF Top Tstg Ptot Semiconductor Group 326 01.97 BAT 114-099 Thermal Resistance (per diode) Parameter Junction to soldering point Junction to ambient1) 1) Symbol Limit Values 780 1020 Unit K/W K/W RthJS RthJA Mounted on alumina 15 mm x 16.7 mm to 0.7 mm Electrical Characteristics (per diode; TA = 25 C) Parameter Breakdown voltage IR = 5 A Forward voltage IF = 1 mA IF = 10 mA Forward voltage matching1) IF = 10 mA Diode capacitance VR = 0 V, f = 1 MHz Forward resistance IF = 10 mA / 50 mA 1) Symbol Limit Values min. typ. max. Unit V VBR 4 - 0.6 0.7 - 0.25 5.5 - V 0.7 0.8 mV 10 pF 0.5 - VF VF - - - - - CT RF VF is difference between lowest and highest VF in component. Semiconductor Group 327 BAT 114-099 Forward Current IF = f(VF) Semiconductor Group 328 |
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