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| LESHAN RADIO COMPANY, LTD. Low Noise Transistors NPN Silicon COLLECTOR 3 MMBT5088LT1 MMBT5089LT1 3 1 BASE 2 EMITTER MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current -- Continuous Symbol V CEO V CBO V EBO IC 5088LT 30 35 4.5 50 15089LT1 25 30 Unit Vdc Vdc Vdc mAdc 1 2 CASE 318-08, STYLE 6 SOT-23 (TO-236AB) THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR- 5 Board (1) T A =25 C Derate above 25 C Thermal Resistance, Junction to Ambient Symbol PD Max 225 1.8 556 300 2.4 R JA T J , T stg 417 -55 to + 150 Unit mW mW/ C C/W mW mW/ C C/W C R JA PD Total Device Dissipation Alumina Substrate,(2) TA=25C Derate above 25C Thermal Resistance,Junction to Ambient Junction and Storage Temperature DEVICE MARKING MMBT5088LT1 = 1Q; MMBT5089LT1 = 1R ELECTRICAL CHARACTERISTICS (T A = 25C unless otherwise noted) Characteristic Symbol V (BR)CEO MMBT5088 MMBT5089 V(BR)CBO MMBT5088 MMBT5089 I CBO MMBT5088 MMBT5089 -- -- 50 50 35 30 -- -- nAdc 30 25 -- -- Vdc Min Max Unit Vdc OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (I C = 1.0 mAdc, I B = 0) Collector-Base Breakdown Voltage (I C = 100 Adc, I E = 0) Collector Cutoff Current (V CB = 20 Vdc, I E = 0 ) (V CB = 15 Vdc, I E = 0 ) Emitter Cutoff Current (VEB(off)= 3.0Vdc, I C = 0) MMBT5088 I EBO -- -- nAdc 50 100 (VEB(off) = 4.5Vdc, I C = 0) MMBT5089 1. FR-5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. M18-1/4 LESHAN RADIO COMPANY, LTD. MMBT5088LT1 PNP MMBT5089LT1 ELECTRICAL CHARACTERISTICS (T A = 25C unless otherwise noted) (Continued) Characteristic Symbol hFE MMBT5088 MMBT5089 MMBT5088 MMBT5089 MMBT5088 MMBT5089 VCE(sat) -- VBE(sat) -- f 0.8 MHz 50 C cb -- C eb -- h fe MMBT5088 MMBT5089 NF MMBT5088 MMBT5089 -- -- 3.0 2.0 350 450 1400 1800 dB 10 -- 4.0 pF -- pF 0.5 Vdc 300 400 350 450 300 400 900 1200 -- -- -- -- Vdc Min Max Unit -- ON CHARACTERISTICS DC Current Gain (IC=100Adc,VCE=5.0Vdc) (IC=1.0mAdc,V CE=5.0Vdc) (IC = 10mAdc, VCE=5.0Vdc) Collector-Emitter Saturation Voltage (IC=10mAdc,IB=1.0mAdc) Base-Emitter Saturation Voltage (IC =10mAdc,IB=1.0mAdc) SMALL-SIGNAL CHARACTERISTICS Current-Gain -- Bandwidth Product (IC= 500 Adc,VCE=5.0Vdc,f=20MHz) Collector-Base Capacitance (VCB=5.0Vdc,IE=0,f=1.0MHz emitter guarded) Emitter-Base Capacitance (VEB=0.5Vdc,IC=0,f=1.0MHz collector guarded) Small Signal Current Gain (IC=1.0mAdc,VCE=5.0Vdc,f=1.0kHz) Noise Figure (IC=100Adc,VCE=5.0Vdc, RS=10,f=1.0kHz) T RS in ~ en IDEAL TRANSISTOR Figure 1.Transistor Noise Model M18-2/4 LESHAN RADIO COMPANY, LTD. MMBT5088LT1 MMBT5089LT1 NOISE CHARACTERISTICS (V CE = 5.0 Vdc, T A = 25C) NOISE VOLTAGE 30 30 BANDWIDTH=1.0Hz e n , NOISE VOLTAGE (nV) BANDWIDTH=1.0Hz I C = 10 mA 3.0mA 10 R S~ 0 ~ e n , NOISE VOLTAGE (nV) 20 20 R S~ 0 ~ f = 10Hz 10 7.0 100Hz 10kHz 1.0mA 7.0 5.0 5.0 1.0kHz 300A 3.0 10 20 50 100 200 5001.0k 2.0k 5.0k 10k 20k 50k100k 3.0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 100kHz 2.0 5.0 10 f, FREQUENCY (Hz) I C , COLLECTOR CURRENT (mA) Figure 2. Effects of Frequency 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 20 Figure 3. Effects of Collector Current BANDWIDTH=1.0Hz I n , NOISE CURRENT (pA) NF, NOISE FIGURE (dB) I C=10mA 3.0mA 1.0mA 300A 100A 10A R S~ 0 ~ 10 20 50 100 200 5001.0k 2.0k 5.0k 10k 20k 50k100k 16 BANDWIDTH=10 Hz to15.7 kHz 12 I C =1.0 mA 8.0 500A 100A 4.0 10A 30A 0 10 20 50 100 200 500 1k 2k 5k 10k 20k 50k 100k f, FREQUENCY (Hz) R S , SOURCE RESISTANCE (OHMS) Figure 4. Noise Current Figure 5. Wideband Noise Figure 100 Hz NOISE DATA V T , TOTAL NOISE VOLTAGE (nV) 300 200 20 BANDWIDTH=1.0Hz 100A 3.0mA 1.0mA 300A I C =10mA 100 70 50 30 20 NF, NOISE FIGURE (dB) 16 I C = 10mA 3.0mA 1.0mA 12 300A 8.0 30A 10A 100A 4.0 10 7.0 5.0 3.0 10 20 50 100 200 5001.0k 30A BANDWIDTH=1.0Hz 10A 0 2.0k 5.0k 10k 20k 50k100k 10 20 50 100 200 500 1.0k 2.0k 5.0k 10k 20k 50k 100k R S , SOURCE RESISTANCE (OHMS) R S , SOURCE RESISTANCE (OHMS) Figure 6. Total Noise Voltage Figure 7. Noise Figure M18-3/4 LESHAN RADIO COMPANY, LTD. MMBT5088LT1 MMBT5089LT1 h FE, DC CURRENT GAIN (NORMALIZED) 4.0 3.0 V 2.0 CE =5.0 V T A=125C 25C 1.0 -55C 0.7 0.5 0.4 0.3 0.2 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 I C , COLLECTOR CURRENT (mA) Figure 8. DC Current Gain R VBE , BASE- EMITTER TEMPERATURE COEFFICIENT (mV/ C) 1.0 -0.4 T J =25C V, VOLTAGE (VOLTS) 0.8 -0.8 0.6 V BE @V CE = 5.0V -1.2 0.4 -1.6 T J=25C to 125C 0.2 -2.0 -55C to25C -0.4 0.01 0.02 0.05 V CE(sat) @ I C /I B =10 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 9. "On" Voltages Figure 10. Temperature Coefficients 0.6 T J = 25C C ob C eb C cb C ib f T , CURRENT- GAIN -- BANDWIDTH 0.8 500 C, CAPACITANCE (pF) 300 PRODUCT (MHz) 0.4 0.3 200 0.2 100 70 50 1.0 V CE = 5.0 V 1.0 0.8 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 T J = 25C 2.0 5.0 10 20 50 100 V R , REVERSE VOLTAGE (VOLTS) I C , COLLECTOR CURRENT (mA) Figure 11. Capacitance Figure 12. Current-Gain -- Bandwidth Product M18-4/4 |
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