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InSb Hall Element HW-101A *High-sensitivity InSb Hall element. *Mini-mold SMT package (fits SOT143 land pattern). *Shipped in packet-tape reel (3000pcs per reel). Note : It is requested to read and accept "IMPORTANT NOTICE". Please be aware that AKE products are not intended for use in life support equipment, devices, or systems. Use of AKE products in such applications requires the advance written approval of the appropriate AKE officer. Certain applications using semiconductor devices may involve potential risks of personal injury, property damage, or loss of life. In order to minimize these risks, adequate design and operating safeguards should be provided by the customer to minimize inherent or procedural hazards. Inclusion of AKE products in such applications is understood to be fully at the risk of the customer using AKE devices or systems. *Absolute Maximum Ratings Item Symbol Limit Unit Max. Input Current Ic Const. Current Drive 20 mA Operating Temp. Range Topr. -40 to +110 C Storage Temp. Range Tstg. -40 to +125 C *Classification of Output Hall Voltage (VH) Rank VH [ mV ] 122 144 168 196 228 266 310 to to to to to to to 150 174 204 236 274 320 370 B=50mT, Vc=IV Constant Voltage Drive Conditions *Electrical Characteristics(Ta=25C) Item Symbol Conditions Min. Typ. Max. Unit A B C D 122 370 mV E F G Output Hall Voltage VH Const. Voltage Drive B=50mT, Vc=IV B=0mT, Ic=0.1mA B=0mT, Ic=0.1mA B=0mT, Vc=IV Input Resistance Output Resistance Offset Voltage Rin Rout Vos 240 240 -7 550 550 Note : When ordering, specify 3-rank or wider range(e*g*,BCD). *Input Current Derating Curve +7 mV 20 Input Resistance Rin : 240 to 550 Temp. Coefficient of VH VH B=50mT, Ic=5mA -1.8 %/C Input Current(mA) Temp. Coefficient of Rin Rin B=0mT, Ic=0.1mA -1.8 %/C 10 Dielectric Strength 100V D.C 1.0 M Notes : 1. VH = VHM - Vos (VHM:meter indication) 1 -V 2. VH = VH (T1) X VH (T3) - T H) (T2) X 100 (T3 2 1 Rin (T3) - Rin (T2) X 100 3. Rin = Rin (T1) X (T - T ) 3 2 T1 = 20C, T2 = 0C, T3 = 40C 0 - 40 - 20 0 20 40 60 80 Ambient Temperature.(C) 100 120 *Dimensional Drawing (mm) 2.90.1 0.5 1.9 0.5 0.4 0.35 Note : Rin of Hall element decreases rapidly as ambient temperature increases. Ensure compliance with input current derating curve envelope, throughout the operating temperature range. *Input Voltage Derating Curve 2.0 Input Resistance Rin : 240 to 550 2 1.550.1 2.90.2 1 0 to 0.1 N 5 5 3 4 0.1 Input Voltage(V) 1.0 +0.2 -0.1 0.3 3 1.1 0.8 Pinning Input Output 1() 2() 3 4 () () 10 - 40 0 - 20 0 20 40 60 80 Ambient Temperature.(C) 100 120 Note : For constant-voltage drive, stay within this input voltage derating curve envelope. 11 HW-101A a *Characteristic Curves Rin-T 2000 1800 Input Resistance:Rin( ) Output Voltage:VH(mV) 1600 1400 1200 1000 800 600 400 200 0 -50 0 50 100 Ambient Temperature(C) 150 0.0 0 10 20 30 Magnetic Flux Density B (mT) 40 50 500.0 400.0 300.0 Vc 200.0 100.0 VH-B 600.0 Ic const Vc const Ic = 5 (mA) Vc = 1 (V) Ta = 25 (C) Ic c VH-T 2000 1750 Output Voltage:VH(mV) 1500 1250 1000 750 500 Vc 250 0 -50 Ic Ic const Vc const VH-Vc, VH-Ic 1200 1000 800 600 400 200 0 0.0 5 0.5 10 1.0 Ic (mA) Input Current Vc (V) Input Voltage 15 1.5 20 Ic:(mA) 2.0 Vc:(V) Vc Ic const Vc const B = 50 (mT) Ta = 25 (C) Ic Ic = 5 (mA) Vc = 1 (V) B = 50 (mT) Output Voltage:VH(mV) f 0 50 100 Ambient Temperature(C) 150 VOS-T 40 Ic const Vc const Offset Voltage:Vos(mV) 30 Ic 20 Ic = 5 (mA) Vc = 1 (V) B = 0 (mT) VOS-Vc, VOS-Ic 20 18 Offset Voltage:Vos(mV) 16 14 12 10 8 6 4 2 5 0.5 10 1.0 Ic (mA) Input Current Vc (V) Input Voltage 15 1.5 20 Ic:(mA) 2.0 Vc:(V) Vc Ic const Vc const B = 0 (mT) Ta = 25 (C) Ic i 10 Vc 0 -50 0 50 100 Ambient Temperature(C) 150 0 0.0 *Magnetic Flux Density 1(mT)=10(G) In This Example : Rin=350( ), Vos=4.7(mV), Vc=1(V) 12 |
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