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| Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 800V Low RDS(ON) : 1.000 (Typ.) SSH9N80A BVDSS = 800 V RDS(on) = 1.3 ID = 9 A TO-3P 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25 C) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8" from case for 5-seconds Value 800 9 5.7 1 O Units V A A V mJ A mJ V/ns W W/ C 36 30 432 9 24 2.0 240 1.92 - 55 to +150 O 1 O 1 O 3 O 2 C 300 Thermal Resistance Symbol R JC R R CS JA Characteristic Junction-to-Case Case-to-Sink Junction-to-Ambient Typ. -0.24 -- Max. 0.52 -40 Units C/W Rev. B (c)1999 Fairchild Semiconductor Corporation SSF9N80A N-CHANNEL POWER MOSFET Electrical Characteristics (TC=25 C unless otherwise specified) Symbol BVDSS BV/TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain("Miller") Charge Min. Typ. Max. Units 800 -2.0 -----------------0.96 ------5.54 195 82 25 37 113 42 93 14.3 42.1 --3.5 100 -100 25 250 1.3 -230 95 60 85 235 95 120 --nC ns A pF V V/ C V nA Test Condition VGS=0V,ID=250A ID=250A VGS=30V VGS=-30V VDS=800V VDS=640V,TC=125 C VGS=10V,ID=0.85A VDS=50V,ID=0.85A 4 O* 4 O See Fig 7 VDS=5V,ID=250A 2020 2600 VGS=0V,VDS=25V,f =1MHz See Fig 5 VDD=400V,ID=2A, RG=16 See Fig 13 45 OO VDS=640V,VGS=10V, ID=2A See Fig 6 & Fig 12 45 OO Source-Drain Diode Ratings and Characteristics Symbol IS ISM VSD trr Qrr Characteristic Continuous Source Current Pulsed-Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge 1 O 4 O Min. Typ. Max. Units --------560 8.4 6 36 1.4 --A V ns C Test Condition Integral reverse pn-diode in the MOSFET TJ=25 C,IS=6A,VGS=0V TJ=25 C,IF=9A diF/dt=100A/s 4 O Notes ; 1 O Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature 2 O L=23mH, I AS=6A, VDD=50V, RG=27, Starting T J =25 C _ < _ 3 O ISD < 9A, di/dt_ 180A/ s, VDD < BVDSS , Starting T J =25 C _ 4 Pulse Test : Pulse Width = 250 s, Duty Cycle <2% O 5 O Essentially Independent of Operating Temperature N-CHANNEL POWER MOSFET Fig 1. Output Characteristics [A] Top : 1 10 15V 10V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V SSH9N80A Fig 2. Transfer Characteristics [A] ID , Drain Current 1 10 V GS ID , Drain Current 0 10 0 10 150 oC 25 oC @ Notes : 1. V = 0 V GS 2. V = 50 V DS - 55 oC 3. 250 s Pulse Test 6 8 10 10-1 10-1 100 @ Notes : 1. 250 s Pulse Test 2. T = 25 oC C 101 10 -1 2 4 VDS , Drain-Source Voltage [V] [A] VGS , Gate-Source Voltage [V] Fig 3. On-Resistance vs. Drain Current RDS(on) , [ ] Drain-Source On-Resistance 5 Fig 4. Source-Drain Diode Forward Voltage 4 VGS = 10 V 3 IDR , Reverse Drain Current 11 0 2 V = 20 V GS 1 @ N t : TJ = 2 oC oe 5 0 0 5 10 15 20 25 30 3 5 4 0 10 0 @Nts: oe 1 VGS = 0 V . 2 oC 5 1 -1 0 02 . 04 . 06 . us et 2 2 0 s P l e T s .5 1 0 oC 5 08 . 10 . 12 . ID , Drain Current [A] VSD , Source-Drain Voltage [V] Fig 5. Capacitance vs. Drain-Source Voltage 3000 C = C + C ( Cds= shorted ) iss gs gd C =C +C oss ds gd C iss 2000 C =C rss gd Fig 6. Gate Charge vs. Gate-Source Voltage [V] V = 160 V DS VDS = 400 V VDS = 640 V [pF] 10 VGS , Gate-Source Voltage Capacitance 5 1000 C oss C rss @ Notes : 1. V = 0 V GS 2. f = 1 MHz @ Notes : I = 9.0 A D 0 0 20 40 60 80 100 0 0 10 1 10 VDS , Drain-Source Voltage [V] QG , Total Gate Charge [nC] SSH9N80A BVDSS , (Normalized) Drain-Source Breakdown Voltage N-CHANNEL POWER MOSFET Fig 8. On-Resistance vs. Temperature RDS(on) , (Normalized) Drain-Source On-Resistance 3.0 Fig 7. Breakdown Voltage vs. Temperature 1.2 2.5 1.1 2.0 1.0 1.5 1.0 @ Notes : 1. V = 10 V GS 2. I = 4.5 A D 0.0 -75 0.9 @ Notes : 1. V = 0 V GS 2. I = 250 A D 0.5 0.8 -75 -50 -25 0 25 50 75 100 125 150 175 -50 -25 0 25 50 75 100 125 150 175 TJ , Junction Temperature [ oC] TJ , Junction Temperature [ oC] Fig 9. Max. Safe Operating Area [A] Operation in This Area is Limited by R DS(on) 10 s 1 10 Fig 10. Max. Drain Current vs. Case Temperature 10 2 10 [A] 100 s 1 ms 10 ms DC ID , Drain Current ID , Drain Current 8 6 0 10 4 -1 10 @ Notes : 1. T = 25 oC C 2. T = 150 oC J 3. Single Pulse 2 -2 10 1 10 102 103 0 25 50 75 100 125 150 VDS , Drain-Source Voltage [V] Tc , Case Temperature [ oC] Fig 11. Thermal Response Thermal Response D=0.5 10- 1 0.2 0.1 0.05 @ Notes : 1. Z J C (t)=0.52 3. TJ M -TC =PD M *Z o C/W Max. 2. Duty Factor, D=t /t2 1 JC (t) Z (t) , PDM 0.02 0.01 10- 2 10- 5 10- 4 10- 3 10- 2 10- 1 single pulse t1 t2 JC 100 101 t 1 , Square Wave Pulse Duration [sec] SSH9N80A BVDSS , (Normalized) Drain-Source Breakdown Voltage N-CHANNEL POWER MOSFET Fig 8. On-Resistance vs. Temperature RDS(on) , (Normalized) Drain-Source On-Resistance 3.0 Fig 7. Breakdown Voltage vs. Temperature 1.2 2.5 1.1 2.0 1.0 1.5 1.0 @ Notes : 1. V = 10 V GS 2. I = 4.5 A D 0.0 -75 0.9 @ Notes : 1. V = 0 V GS 2. I = 250 A D 0.5 0.8 -75 -50 -25 0 25 50 75 100 125 150 175 -50 -25 0 25 50 75 100 125 150 175 TJ , Junction Temperature [ oC] TJ , Junction Temperature [ oC] Fig 9. Max. Safe Operating Area [A] Operation in This Area is Limited by R DS(on) 10 s 1 10 Fig 10. Max. Drain Current vs. Case Temperature 10 2 10 [A] 100 s 1 ms 10 ms DC ID , Drain Current ID , Drain Current 8 6 0 10 4 -1 10 @ Notes : 1. T = 25 oC C 2. T = 150 oC J 3. Single Pulse 2 -2 10 1 10 102 103 0 25 50 75 100 125 150 VDS , Drain-Source Voltage [V] Tc , Case Temperature [ oC] Fig 11. Thermal Response Thermal Response D=0.5 10- 1 0.2 0.1 0.05 @ Notes : 1. Z J C (t)=0.52 3. TJ M -TC =PD M *Z o C/W Max. 2. Duty Factor, D=t /t2 1 JC (t) Z (t) , PDM 0.02 0.01 10- 2 10- 5 10- 4 10- 3 10- 2 10- 1 single pulse t1 t2 JC 100 101 t 1 , Square Wave Pulse Duration [sec] SSH9N80A N-CHANNEL POWER MOSFET Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS -- IS L Driver RG VGS Same Type as DUT VGS VDD * dv/dt controlled by "R * G * IS controlled by Duty Factor "D" VGS ( Driver ) Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current IS ( DUT ) IRM di/dt Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt Vf VDD Body Diode Forward Voltage Drop TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM CoolFETTM CROSSVOLTTM E2CMOSTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM GTOTM HiSeCTM DISCLAIMER ISOPLANARTM MICROWIRETM POPTM PowerTrenchTM QSTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 TinyLogicTM UHCTM VCXTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. |
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