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RSQ030P03
Transistor
DC-DC Converter (-30V, -3A)
RSQ030P03
Features 1) Low On-resistance.(90m at 4.5V) 2) High Power Package. 3) High speed switching. 4) Low voltage drive.(4.5V) External dimensions (Units : mm)
TSMT6
2.8 1.6
(3) (2) (1) (4) (5) (6)
0.16
0.4
Each lead has same dimensions
Abbreviatedsymbol : TN
Applications DC-DC converter
Structure Silicon P-channel MOSFET
Equivalent circuit
(6) (5) (4)
Packaging specifications
Package Type Code Basic ordering unit (pieces) RSQ030P03
(1) (2)
2
Taping TR 3000
1 (1)DRAIN (2)DRAIN (3)GATE (4)SOURCE (5)DRAIN (6)DRAIN
0.85
(3)
1 ESD PROTECTION DIODE 2 BODY DIODE
2.9
1/4
RSQ030P03
Transistor
Absolute maximum ratings (Ta=25C)
Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Total power dissipation Channel temperature Range of Storage temperature
< < 1 Pw =10s, Duty cycle =1% 2 Mounted on a ceramic board
Symbol VDSS VGSS Continuous Pulsed Continuous Pulsed ID IDP IS ISP PD Tch Tstg
Limits -30 20 3 12 -1 -4 1.25 150 -55~+150
Unit V V A A A A C C
1 1
W 2
Electrical characteristics (Ta=25C)
Parameter Gate-source leakage Symbol IGSS Min. - -30 - -1.0 - Typ. - - - - 60 90 100 - 440 110 80 10 13 40 12 6.0 1.6 2.0 Max. 10 - -1 -2.5 80 125 140 - - - - - - - - - - - Unit A V A V m m m S pF pF pF ns ns ns ns nC nC nC ID=-1.5A VDD -15V VGS=-10V RL=10 RGS=10 VDD -15V VGS=-5V ID=-3A VDS=-10V,VGS=0V f=1MHz Conditions VGS=20V, VDS=0V ID=-1mA, VGS=0V , VDS=-30V, VGS=0V VDS=-10V, ID=-1mA ID=-3A, VGS=-10V ID=-3A, VGS=-4.5V ID=-1.5A, VGS=-4.0V VDS=-10V, ID=-1.5A
Drain-source breakdown voltage V(BR)DSS Zero gate voltage drain current
Gate threshold voltage IDSS VGS(th)
Static drain-source on-state resistance
Foward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge
PULSED
RDS(on)
- -
Yfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd
1.5 - - -

- - - - - - -
Body diode characteristics (source-drain characteristics)
Forward voltage VSD - - -1.2 V IS=-1A, VGS=0V
2/4
RSQ030P03
Transistor
Electrical characteristic curves
10 VDS=-10V pulsed
1000
Static Drain-Source On-State Resistance RDS(on)[m]
1000 VGS=-10V pulsed
Static Drain-Source On-State Resistance RDS(on)[m]
Ta=25 C pulsed
Drain Current : -ID (A)
1 Ta=125C 75C 25C -25C 0.1
VGS=-4V -4.5V -10V
Ta=125 75 25 -25
C C C C
100
100
0.01
0.001
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
10 0.1
1
10
10 0.1
1
10
Gate-Source Voltage : -VGS[V]
Drain Current : -ID[A]
Drain Current : -ID[A]
Fig.1 Typical Transfer Characteristics
Fig.2 Static Drain-Source On-State Resistance vs.Drain Current
Fig.3 Static Drain-Source On-State Resistance vs.Drain Current
1000
Static Drain-Source On-State Resistance RDS(on)[m]
Static Drain-Source On-State Resistance RDS(on)[m]
VGS=-4.5V pulsed
1000 VGS=-4V pulsed
10
VGS=-0V pulsed
Reverse Drain Current : -IDR[A]
Ta=125 75 25 -25
C C C C
1
Ta=125 75 25 -25
C C C C
100
100
Ta=125 C 75 C 25 C -25 C
0.1
10 0.1
1
10
10 0.1
1
10
0.01 0
0.5
1.0
1.5
2.0
Drain Current : -ID[A]
Drain Current : -ID[A]
Source-Drain Voltage : -VSD[V]
Fig.4 Static Drain-Source On-State Resistance vs.Drain-Current
Fig.5 Static Drain-Source On-State Resistance vs.Drain-Current
Fig.6 Reverse Drain Current Source-Drain Current
10000
1000
Ciss
Ta=25 C VDD=-15V VGS=-10A RG=10 pulsed
8 7 Ta=25 C VDD=-15V ID=-3A RG=10 pulsed
Gate-Source Voltage: -VGS [V]
10
Capacitance : C [pF]
Switching Time : t [ns]
6 5 4 3 2 1
1000
Coss Crss
100
td(off)
tf
100
10
td(on) tr
10 0.01
Ta=25 C f=1MHz VGS=0V
0.1
1
10
100
1 0.01
0.1
1
0
0
1
2
3
4
5
6
Drain-Source Voltage : -VDS[V]
Drain Current : -ID[A]
Fig.7 Typical Capactitance vs.Drain-Source Voltage
Total Gate Charge : Qg[nC]
Fig.8 Switching Characteristics
Fig.9 Dynamic Input Characteristics
3/4
RSQ030P03
Transistor
Measurement circuits
VGS 10% 50% Pulse Width 50% 90%
10%
10%
VGS
ID D.U.T. RL
VDS
VDS
90%
90%
RG
VDD
td(on) ton
tr
td(off)
tf toff
Fig.10 Switching Time Measurement Circuit
Fig.11 Switching Waveforms
VG Qg VGS
VGS
IG(Const)
ID
VDS
Qgs
RG D.U.T. RL
Qgd
VDD
Charge
Fig.12 Gate Charge Measurement Circuit
Fig.13 Gate Charge Waveforms
4/4
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document use silicon as a basic material. Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.0

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