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| S T M4532 S amHop Microelectronics C orp. Mar.30, 2005 V er1.1 Dual E nhancement Mode Field E ffect Transistor ( N and P Channel) P R ODUC T S UMMAR Y (N-C hannel) V DS S 30V P R ODUC T S UMMAR Y (P -C hannel) V DS S -30V ID 5.5A R DS (ON) ( m W ) Max ID -4.5A R DS (ON) ( m W ) Max 40@ V G S = 10V 50@ V G S = 4.5V D1 8 55@ V G S = -10V 85@ V G S = -4.5V D1 7 D2 6 D2 5 S O-8 1 1 2 3 4 S1 G1 S 2 G2 ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted) P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous a @ TJ=125 C b -P ulsed Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Operating Junction and S torage Temperature R ange S ymbol VDS VGS ID IDM IS PD TJ, TS TG N-C hannel P-C hannel 30 20 5.5 23 1.7 2.0 -55 to 150 -30 20 -4.5 -18 -1.7 Unit V V A A A W C THE R MAL C HAR AC TE R IS TIC S Thermal R esistance, Junction-to-Ambient a R cJA 62.5 C /W 1 S T M4532 N-Channel E LE CTR ICAL CHAR ACTE R IS TICS (TA =25 C unless otherwise noted) Parameter OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BVDSS IDSS IGSS VGS(th) R DS (ON) ID(ON) gFS c S ymbol Condition VGS = 0V, ID = 250uA VDS = 24V, VGS = 0V VGS = 20V, VDS = 0V VDS = VGS, ID = 250uA VGS =10V, ID = 6A VGS =4.5V, ID = 5.2A VDS = 5V, VGS = 10V VDS = 10V, ID = 6.0A Min Typ C Max Unit 30 1 100 0.8 28 40 15 6 510 155 127 1.8 40 50 V uA nA V m ohm m ohm ON CHAR ACTE R IS TICS b Gate Threshold Voltage Drain-S ource On-S tate R esistance On-S tate Drain Current Forward Transconductance A S PF PF PF DYNAMIC CHAR ACTE R IS TICS Input Capacitance Output Capacitance R everse Transfer Capacitance CISS COSS CRSS c VDS =8V, VGS = 0V f =1.0MHZ S WITCHING CHAR ACTE R IS TICS Turn-On Delay Time R ise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-S ource Charge Gate-Drain Charge tD(ON) tr tD(OFF) tf Qg Qgs Qgd VDD = 10V, ID = 1A, VGEN = 4.5V, R L = 10 ohm R GE N = 6 ohm VDS =10V, ID = 6A, VGS =4.5V 2 15.6 9.7 26.3 26.9 9.3 2.5 3.2 ns ns ns ns nC nC nC S T M4532 P-Channel E LE CTR ICAL CHAR ACTE R IS TICS (TA = 25 C unless otherwise noted) Parameter OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BVDSS IDSS IGSS VGS(th) R DS (ON) ID(ON) gFS CISS COSS CRSS c S ymbol Condition VGS = 0V, ID = -250uA VDS = -24V, VGS = 0V VGS = 20V, VDS = 0V VDS = VGS, ID = -250uA VGS =-10V, ID = -4.9A VGS =-4.5V, ID = -3.6A VDS = -5V, VGS = -10V VDS = -15V, ID = - 4.9A Min Typ C Max Unit -30 -1 100 -1 -1.5 45 75 -12 4 393 116 45 -2.5 V uA nA V ON CHAR ACTE R IS TICS b Gate Threshold Voltage Drain-S ource On-S tate R esistance On-S tate Drain Current Forward Transconductance 55 m ohm 85 m ohm A S PF PF PF DYNAMIC CHAR ACTE R IS TICS c Input Capacitance Output Capacitance R everse Transfer Capacitance VDS =-15V, VGS = 0V f =1.0MHZ S WITCHING CHAR ACTE R IS TICS Turn-On Delay Time R ise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-S ource Charge Gate-Drain Charge tD(ON) tr tD(OFF) tf Qg Qgs Qgd VD = -15V, R L = 15 ohm ID = -1A, VGEN = -10V, R GE N = 6 ohm VDS=-15V, ID=-4.9A,VGS=-10V VDS=-15V, ID=-4.9A,VGS=-4.5V VDS =-15V, ID = - 4.9A, VGS =-10V 3 13 4.7 47.1 17 15.6 7.3 2.4 3.3 ns ns ns ns nC nC nC nC S T M4532 E LE CTR ICAL CHAR ACTE R IS TICS (TA=25 C unless otherwise noted) Parameter Diode Forward Voltage S ymbol VSD Condition V G S = 0V, Is =1.7A N-C h V G S = 0V, Is =-1.7A P -C h Min Typ Max Unit 0.77 1.2 -0.82 -1.2 C DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS b V Notes a.S urface Mounted on FR 4 Board, t 10sec. b.Pulse Test:Pulse Width 300us, Duty Cycle 2%. c.Guaranteed by design, not subject to production testing. N-C hannel ID, Drain C urrent(A) 10 V G S =10,9,8,7,6,5,4,3V 8 20 25 ID, Drain C urrent (A) 6 15 4 2 0 V G S =1.5V 10 25 C 5 0 0.0 T j=125 C -55 C 0 2 4 6 8 10 12 0.5 1.0 1.5 2.0 2.5 3.0 V DS , Drain-to-S ource Voltage (V ) V G S , G ate-to-S ource Voltage (V ) F igure 1. Output C haracteris tics 1200 1.8 F igure 2. Trans fer C haracteris tics R DS (ON), On-R es is tance Normalized 1000 1.6 1.4 1.2 1.0 0.8 0.6 -55 V G S =10V ID=6A C , C apacitance (pF ) 800 600 400 200 0 C os s 0 2 4 6 8 C rs s 10 12 C is s -25 0 25 50 75 100 125 V DS , Drain-to S ource Voltage (V ) T J , J unction T emperature ( C ) F igure 3. C apacitance F igure 4. On-R es is tance Variation with Drain C urrent and Temperature 4 S T M4532 N-C hannel B V DS S , Normalized Drain-S ource B reakdown V oltage V th, Normalized G ate-S ource T hres hold V oltage 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -55 -25 0 25 50 75 100 125 150 V DS =V G S ID=250uA 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 ID=250uA 5 T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) F igure 5. G ate T hres hold V ariation with T emperature F igure 6. B reakdown V oltage V ariation with T emperature 18 20 gFS , T rans conductance (S ) 12 9 6 3 0 0 5 10 15 20 25 V DS =10V Is , S ource-drain current (A) 15 10 1 0 0.4 0.6 0.8 1.0 T J =25 C 1.2 1.4 IDS , Drain-S ource C urrent (A) V S D, B ody Diode F orward V oltage (V ) F igure 7. T rans conductance V ariation with Drain C urrent F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent 5 S T M4532 P -C hannel 25 -V G S =10,9,8,7,6,5,4,3V 20 16 20 25 C T j=125 C -ID, Drain C urrent (A) -ID, Drain C urrent (A) 15 12 -55 C 8 10 5 0 -V G S =1.5V 4 0 0 2 4 6 8 10 12 0 0.5 1 1.5 2 2.5 3 -V DS , Drain-to-S ource Voltage (V ) -V G S , G ate-to-S ource Voltage (V ) F igure 1. Output C haracteris tics F igure 2. Trans fer C haracteris tics R DS (ON), On-R es is tance(Ohms ) (Normalized) 600 500 1.8 1.6 1.4 1.2 1.0 0.8 0.6 -55 V G S =-10V ID=-4.9A C , C apacitance (pF ) 400 300 200 C is s C os s 100 0 C rs s 0 5 10 15 20 25 30 -25 0 25 50 75 100 125 -V DS , Drain-to S ource Voltage (V ) T j, J unction T emperature ( C ) F igure 3. C apacitance F igure 4. On-R es is tance Variation with Temperature 6 S T M4532 P -C hannel V DS =V G S ID=-250uA B V DS S , Normalized Drain-S ource B reakdown V oltage V th, Normalized G ate-S ource T hres hold V oltage 1.09 1.06 1.03 1.00 0.9 0.6 0.3 -50 -25 0 25 50 75 100 125 150 1.15 ID=-250uA 1.10 1.05 1.00 0.95 0.90 0.85 -55 -25 0 25 50 75 100 125 150 5 T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) F igure 5. G ate T hres hold V ariation with T emperature 10 F igure 6. B reakdown V oltage V ariation with T emperature 20.0 T J =25 C gFS , T rans conductance (S ) 6 4 2 V DS =-15V 0 0 5 10 15 20 -Is , S ource-drain current (A) 8 10.0 1.0 0.0 0.5 1.0 1.5 2.0 2.5 -IDS , Drain-S ource C urrent (A) -V S D, B ody Diode F orward V oltage (V ) F igure 7. T rans conductance V ariation with Drain C urrent F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent 7 S T M4532 N-C hannel V G S , G ate to S ource V oltage (V ) ID, Drain C urrent (A) 5 5 4 3 2 1 0 0 2 4 6 8 10 12 14 16 Q g, T otal G ate C harge (nC ) 50 VDS =10V ID=6A 10 RD S (O L N) im it 10 10 0m s ms 11 DC 1s 0.1 0.03 VGS =10V S ingle P ulse T c=25 C 0.1 1 10 20 30 50 V DS , Drain-S ource V oltage (V ) F igure 9. G ate C harge F igure 10. Maximum S afe O perating Area P -C hannel -V G S , G ate to S ource V oltage (V ) 10 -ID, Drain C urrent (A) 40 8 6 4 2 0 0 VDS =-15V ID=-4.9A 10 RD ON S( )L im it 10m 100 ms s 11 DC 1s 0.1 0.03 VGS =-10V S ingle P ulse T A=25 C 0.1 1 10 30 50 2 4 6 8 10 12 14 16 Q g, T otal G ate C harge (nC ) -V DS , B ody Diode F orward V oltage (V ) F igure 9. G ate C harge F igure 10. Maximum S afe O perating Area 8 S T M4532 V DD ton V IN D VG S R GE N G 90% toff tr 90% RL V OUT td(on) V OUT td(off) 90% 10% tf 5 10% INVE R TE D S V IN 50% 10% 50% P ULS E WIDTH F igure 11. S witching T es t C ircuit F igure 12. S witching Waveforms 2 r(t),Normalized E ffective T ransient T hermal Impedance 1 Duty C ycle=0.5 0.2 0.1 0.1 0.05 0.02 S ingle P uls e 0.01 10 -4 P DM t1 1. 2. 3. 4. 10 -2 t2 R cJ A (t)=r (t) * R cJ A R cJ A=S ee Datas heet T J M-T A = P DM* R cJ A (t) Duty C ycle, D=t1/t2 10 100 10 -3 10 -1 1 S quare Wave P uls e Duration (s ec) F igure 13. Normalized T hermal T rans ient Impedance C urve 9 S T M4532 PAC K AG E OUT LINE DIME NS IONS S O-8 1 L E D 0.015X45X A e 0.05 TYP. 0.016 TYP. B A1 0.008 TYP. C H S Y MB OLS A A1 D E H L MILLIME T E R S MIN 1.35 0.10 4.80 3.81 5.79 0.41 0X MAX 1.75 0.25 4.98 3.99 6.20 1.27 8X MIN 0.053 0.004 0.189 0.150 0.228 0.016 0X INC HE S MAX 0.069 0.010 0.196 0.157 0.244 0.050 8X 10 S T M4532 SO-8 Tape and Reel Data SO-8 Carrier Tape unit:P PACKAGE SOP 8N 150O A0 6.40 B0 5.20 K0 2.10 D0 r 1.5 (MIN) D1 r 1.5 + 0.1 - 0.0 E 12.0 O 0.3 E1 1.75 E2 5.5 O 0.05 P0 8.0 P1 4.0 P2 2.0 O 0.05 T 0.3 O 0.05 SO-8 Reel UNIT:P TAPE SIZE 12 P REEL SIZE r 330 M 330 O1 N 62 O 1.5 W 12.4 + 0.2 W1 16.8 - 0.4 H r 12.75 + 0.15 K S 2.0 O 0.15 G R V 11 |
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