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Transistor 2SC2636 Silicon NPN epitaxial planer type For high-frequency amplification/oscillation Unit: mm 6.90.1 1.5 2.50.1 1.0 1.0 2.40.2 2.00.2 3.50.1 s Features q q 1.5 R0.9 R0.9 High transition frequency fT. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 0.4 1.00.1 R 0. 0.85 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 30 20 3 50 400 150 -55 ~ +150 Unit V V V mA mW C C 1:Base 2:Collector 3:Emitter 2.5 2.5 3 2 1 EIAJ:SC-71 M Type Mold Package s Electrical Characteristics Parameter Collector to base voltage Emitter to base voltage Forward current transfer ratio Base to emitter voltage Transition frequency Power gain Common base reverse transfer capacitance Common emitter reverse transfer capacitance Base time constant (Ta=25C) Symbol VCBO VEBO hFE VBE fT* PG Crb Cre rbb' * CC Conditions IC = 100A, IE = 0 IE = 10A, IC = 0 VCB = 10V, IE = -2mA VCB = 10V, IE = -2mA VCB = 10V, IE = -15mA, f = 200MHz VCB = 10V, IE = -1mA, f = 100MHz VCB = 6V, IE = 0, f = 1MHz VCE = 10V, IC = 1mA, f = 10.7MHz VCB = 10V, IE = -10mA, f = 31.9MHz 600 min 30 3 25 720 1200 20 0.8 1.5 25 1600 mV MHz dB pF pF ps typ max Unit V V *f T Rank classification Rank fT T 600 ~ 1300 S 900 ~ 1600 1.250.05 s Absolute Maximum Ratings (Ta=25C) 0.550.1 0.450.05 4.10.2 4.50.1 7 1 Transistor PC -- Ta 500 24 Ta=25C IB=300A 20 20 250A 16 200A 12 2SC2636 IC -- VCE 24 VCE=10V Ta=25C IC -- I B Collector power dissipation PC (mW) Collector current IC (mA) Collector current IC (mA) 18 400 16 300 150A 12 200 8 100A 8 100 4 50A 4 0 0 20 40 60 80 100 120 140 160 0 0 6 12 0 0 150 300 450 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Base current IB (A) IB -- VBE 400 VCE=10V Ta=25C 350 50 60 IC -- VBE Collector to emitter saturation voltage VCE(sat) (V) 100 30 10 3 1 0.3 25C VCE=10V VCE(sat) -- IC IC/IB=10 Collector current IC (mA) Ta=75C 40 Base current IB (A) 300 250 200 150 100 50 0 0 0.6 1.2 1.8 -25C 30 20 Ta=75C 25C 0.1 -25C 0.03 0.01 0.1 10 0 0 0.4 0.8 1.2 1.6 2.0 0.3 1 3 10 30 100 Base to emitter voltage VBE (V) Base to emitter voltage VBE (V) Collector current IC (mA) hFE -- IC 240 VCE=10V 1600 1400 fT -- I E Ta=25C Cre -- VCE Common emitter reverse transfer capacitance Cre (pF) 2.4 IC=1mA f=10.7MHz Ta=25C Forward current transfer ratio hFE 200 Transition frequency fT (MHz) VCE=10V 6V 2.0 1200 1000 800 600 400 200 160 Ta=75C 120 25C -25C 1.6 1.2 80 0.8 40 0.4 0 0.1 0.3 1 3 10 30 100 0 0.1 0.3 1 3 10 30 100 0 0.1 0.3 1 3 10 30 100 Collector current IC (mA) Emitter current IE (mA) Collector to emitter voltage VCE (V) 2 Transistor Zrb -- IE 120 40 f=2MHz Ta=25C 100 35 f=100MHz Rg=50 Ta=25C 2SC2636 PG -- IE 12 VCE=10V f=100MHz Rg=50k Ta=25C NF -- IE Reverse transfer impedance Zrb () 10 VCE=10V 6V 80 Noise figure NF (dB) -100 Power gain PG (dB) 30 25 20 15 10 5 0 - 0.1 - 0.3 8 60 6 40 4 20 VCE=6V 10V 2 0 - 0.1 - 0.3 -1 -3 -10 -1 -3 -10 -30 0 - 0.1 - 0.3 -1 -3 -10 -30 -100 Emitter current IE (mA) Emitter current IE (mA) Emitter current IE (mA) bib -- gib 0 0 brb -- grb 48 yrb=grb+jbrb VCB=10V 200 300 500 bfb -- gfb Forward transfer susceptance bfb (mS) yfb=gfb+jbfb VCB=10V 40 f=200MHz IE=-5mA 32 -2mA 24 500 600 16 300 yib=gib+jbib VCB=10V Input susceptance bib (mS) -10 -20 IE=-2mA f=900MHz -5mA 600 500 300 200 Reverse transfer susceptance brb (mS) - 0.4 - 0.8 600 -1.2 f=900MHz -2mA -1.6 IE=-5mA -30 -40 -50 -2.0 8 900 -60 0 10 20 30 40 50 -2.4 -1.0 - 0.8 - 0.6 - 0.4 - 0.2 0 0 -60 -40 -20 0 20 40 Input conductance gib (mS) Reverse transfer conductance grb (mS) Forward transfer conductance gfb (mS) bob -- gob 12 yob=gob+jbob VCE=10V 900 Output susceptance bob (mS) 10 600 IE=-2mA 6 500 -5mA 8 4 300 2 f=200MHz 0 0 0.4 0.8 1.2 1.6 2.0 Output conductance gob (mS) 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuit examples of the products. It does not constitute the warranting of industrial property, the granting of relative rights, or the granting of any license. (3) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (4) The products and product specifications described in this material are subject to change without notice for reasons of modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, redundant design is recommended, so that such equipment may not violate relevant laws or regulations because of the function of our products. (6) When using products for which dry packing is required, observe the conditions (including shelf life and after-unpacking standby time) agreed upon when specification sheets are individually exchanged. (7) No part of this material may be reprinted or reproduced by any means without written permission from our company. Please read the following notes before using the datasheets A. These materials are intended as a reference to assist customers with the selection of Panasonic semiconductor products best suited to their applications. Due to modification or other reasons, any information contained in this material, such as available product types, technical data, and so on, is subject to change without notice. Customers are advised to contact our semiconductor sales office and obtain the latest information before starting precise technical research and/or purchasing activities. B. Panasonic is endeavoring to continually improve the quality and reliability of these materials but there is always the possibility that further rectifications will be required in the future. Therefore, Panasonic will not assume any liability for any damages arising from any errors etc. that may appear in this material. C. These materials are solely intended for a customer's individual use. Therefore, without the prior written approval of Panasonic, any other use such as reproducing, selling, or distributing this material to a third party, via the Internet or in any other way, is prohibited. 2001 MAR |
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