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Product Description
Sirenza Microdevices' SXA-389 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot. These amplifiers are specially designed for use as driver devices for infrastructure equipment in the 400-2500 MHz cellular, ISM, WLL, PCS, W-CDMA applications. Its high linearity makes it an ideal choice for multi-carrier as well as digital applications.
SXA-389
400-2500 MHz 1/4 W Medium Power GaAs HBT Amplifier with Active Bias
Product Features
* On-chip Active Bias Control, Single 5V Supply * High Output 3rd Order Intercept: +42 to +44 dBm typ. * High P1dB : +25 dBm typ. * High Gain: +19 dB at 850 MHz * High Efficiency: consumes only 600 mW * Patented High Reliability GaAs HBT Technology * Surface-Mountable Power Plastic Package
Typical IP3, P1dB, Gain
50 45 40 35 30 OIP3 P1dB Gain
dBm
25 20 15 10 5 0 850 MHz 1960 MHz 2140 MHz 2450 MHz
Applications
* W-CDMA, PCS, Cellular Systems * High Linearity IF Amplifiers * Multi-Carrier Applications
Units f = 850 MHz f = 1960 MHz f = 2140 MHz f = 2450 MHz f = 850 MHz f = 1960 MHz f = 2140 MHz f = 2450 MHz f = 850 MHz f = 1960 MHz f = 2140 MHz f = 2450 MHz f = 850 MHz f = 1960 MHz f = 2140 MHz f = 2450 MHz f = 850 MHz f = 1960 MHz f = 2140 MHz f = 2450 MHz V cc = 5 V Min. Typ. 25 25 25 25 19 14 13.5 13 1.3:1 1.4:1 1.3:1 1.1:1 43 44 42 42 4.7 5.5 6.0 6.0 90 115 575 100 122 610 Max.
Symbol
Parameters: Test Conditions: Z0 = 50 Ohms, Ta = 25C Output Power at 1dB Compression
P 1dB
dB m
24
S 21
Small signal gain
dB
12.5
15
S11
Input VSWR
-
OIP3
Output Third Order Intercept Point (Pout/Tone = +11 dBm, Tone spacing = 1 MHz)
dB m
39
NF
Noise Figure
dB
ID PDISS Rth, j-l
Device Current Operating Dissipated Power Thermal Resistance (junction - lead)
mA mW C/W
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user's own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2002 Sirenza Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
http://www.sirenza.com
EDS-102231 Rev C
1
SXA-389
Note: Tuned for Output IP3
1/4 W GaAs HBT Amplifier
850 MHz Application Circuit Data, VCC= 5V, ID= 120mA
P1dB vs. Frequency
30 28 26 24 22 20 0 .8 0 .8 5
GHz
dB
Gain vs. Frequency
25
-40C 25C 85C
23 21 19
25C 85C -4 0 C 0 .9 0 .9 5
dBm
17 15 0 .8 0 .8 5
GHz
0 .9
0 .9 5
Input/Output Return Loss, Isolation vs. Frequency, T=25C
0 -5 -1 0
dB
50 47
dBm
Third Order Intercept vs. Frequency (POUT per tone = 11dBm)
-40C 25C 85C
44 41 38 35
-1 5 -2 0 -2 5 -3 0 0 .8 0 .8 5
GHz
S 11 S 12 S 22
0 .9
0 .9 5
0 .8
0 .8 5
GHz
0 .9
0 .9 5
50 47 44
dBm
Third Order Intercept vs. Tone Power Frequency = 850 MHz
Adjacent Channel Power (dBc)
-40C 25C 85C
-40 -45 -50 -55 -60 -65 -70 -75 10
880 MHz Adjacent Channel Power vs. Channel Output Power
41 38 35 0 3 6 9 12 15
25C 85C -40C
12
14
16
18
20
POUT per tone (dBm)
Channel Output Power (dBm) IS-95, 9 Channels Forward
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
http://www.sirenza.com
EDS-102231 Rev C
2
SXA-389
Note: Tuned for Output IP3
1/4 W GaAs HBT Amplifier
1960 MHz Application Circuit Data, VCC= 5V, ID= 120mA
P1dB vs. Frequency
30 28 26 24 22 20 1.93 25C 85C -40C 1.94 1.95 1.96
GHz
dB
Gain vs. Frequency
20 25C 18 16 14 12 10 1.93 85C -40C
dBm
1.97
1.98
1.99
1.94
1.95
1.96
GHz
1.97
1.98
1.99
Input/Output Return Loss, Isolation vs. Frequency, T=25C
0 S 11 -5 -1 0
dB
50
S 12 S 22
dBm
Third Order Intercept vs. Frequency (POUT per tone = 11dBm)
47 44 41 -40C 38 35 1.93 25C 85C
-1 5 -2 0 -2 5 -3 0 1 .9 3
1 .9 4
1 .9 5
1 .9 6
GHz
1 .9 7
1 .9 8
1 .9 9
1.94
1.95
1.96
GHz
1.97
1.98
1.99
Third Order Intercept vs. Tone Power Frequency = 1.96 GHz
50
Adjacent Channel Power (dBc)
1960 MHz Adjacent Channel Power vs. Channel Output Power
-40 -45 -50 -55 -60 -65 -70 -75 25C 85C -40C 10 12 14 16 18 20
47 44 41 -40C 38 35 0 3 6 9 12 15 25C 85C
dBm
POUT per tone (dBm)
Channel Output Power (dBm) IS-95, 9 Channels Forward
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
http://www.sirenza.com
EDS-102231 Rev C
3
SXA-389
Note: Tuned for Output IP3
1/4 W GaAs HBT Amplifier
2140 MHz Application Circuit Data, VCC= 5V, ID= 120mA
Gain vs. Frequency
20 25C 18 16
dB
P1dB vs. Frequency
30 28 26 24 25C 22 20 2.11 85C -40C 2.12 2.13 2.14
GHz
85C -40C
dBm
14 12 10 2.11
2.15
2.16
2.17
2.12
2.13
2.14
GHz
2.15
2.16
2.17
Input/Output Return Loss, Isolation vs. Frequency, T=25C
0 -5 -10 -15 -20 -25 -30 2.11 S 11 S 12 S 22
dBm dB
Third Order Intercept vs. Frequency (POUT per tone = 11dBm)
50 47 44 41 38 35 2.11 -40C 25C 85C
2.12
2.13
2.14
GHz
2.15
2.16
2.17
2.12
2.13
2.14
GHz
2.15
2.16
2.17
Third Order Intercept vs. Tone Power Frequency = 2.14 GHz
50 -40C 47 44 41 38 35 0 3 6 9 12 15
POUT per tone (dBm)
Adjacent Channel Power (dBc)
2140 MHz Adjacent Channel Power vs. Channel Output Power
-40 -45 -50 -55 -60 -65 -70 10 11 12 13 14 15 16 17
Channel Output Power (dBm) W-CDMA, 64 DPCH + Overhead
25C 85C
dBm
25C 85C -40C
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
http://www.sirenza.com
EDS-102231 Rev C
4
SXA-389
Note: Tuned for Output IP3
1/4 W GaAs HBT Amplifier
2450 MHz Application Circuit Data, VCC= 5V, ID= 120mA
Gain vs. Frequency
20 18 16
dB
P1dB vs. Frequency
30 28 26 24 25C 22 20 2.4 2.42 2.44
GHz
25C 85C -40C
dBm
14
85C -40C 2.46 2.48 2.5
12 10 2.4 2.42 2.44
GHz
2.46
2.48
2.5
Input/Output Return Loss, Isolation vs. Frequency, T=25C
0 -5 -10 -15
dB dBm
Third Order Intercept vs. Frequency (POUT per tone = 11dBm)
50 47 -40C 25C 85C
-20 -25 -30 -35 -40 2.4 2.42 2.44
GHz
S 11 S 12 S 22
44 41 38 35
2.46
2.48
2.5
2.4
2.42
2.44
GHz
2.46
2.48
2.5
Third Order Intercept vs. Tone Power Frequency = 2.45 GHz
50 47 44 41 38 35 0 3 6 9 12 15
POUT per tone (dBm)
-40C 25C 85C
dBm
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
http://www.sirenza.com
EDS-102231 Rev C
5
SXA-389 Application Schematic
V cc
1/4 W GaAs HBT Amplifier
C1 C2 C3 L1 C4 C7
Z = 50 , E L 1 Z = 5 0 , E L2 Z = 50 , E L 3
R F in
RFout
L2 C5 C6
Ref. Des.
Vendor Series Matsuo 267M3502104K Rohm MCH18 Rohm MCH18 Rohm MCH18 Rohm MCH18 Rohm MCH18
850 MHz 0.1uF 10% 1000pF 5% 47pF 5% 47pF 5% 3.9pF 0.25pF 3.9pF 0.25pF
1960 MHz 0.1uF 10% 1000pF 5% 22pF 5% 22pF 5% 0.5pF 0.25pF
2140 MHz 0.1uF 10% 1000pF 5% 22pF 5% 22pF 5% 0.5pF 0.25pF
2450 MHz 0.1uF 10% 1000pF 5% 22pF 5% 1.2pF 0.25pF 0.5pF 0.25pF
Ref. Des.
Vendor Series
850 MHz 2
1960 MHz 1 18nH 5% thru 28.7
2140 MHz 1 18nH 5% thru 31.4
2450 MHz 1 15nH 5% thru 35.9
C1 C2 C 3, C 7 C4 C5 C6
C6 Position L1 L2 E L1 E L2 E L3 Toko LL1608-FS Toko LL1608-FS
33nH 5% 1.2nH 0.3nH 9.7 5.6 13.2
Evaluation Board Layout
RFin C1 C2 C3 L1
+
RFout
C4
L2
C7
C5
12
C6
SIRENZA MICRODEVICES SOT-89 Eval Board ECB-101499 Rev B
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
http://www.sirenza.com
EDS-102231 Rev C
6
Absolute Maximum Ratings
Parameter Max. Supply Current (ID) Max. Device Voltage (VCC) Max. Power Dissipation Max. RF Input Power Max. Junction Temp. (TJ) Operating Lead Temp. (TL) Max. Storage Temp. Absolute Limit 240 mA 6.0 V 1500 mW 100 mW +165 C -40 to +85 C +150 C
Pin # 1 2 3 4
SXA-389
1/4 W GaAs HBT Amplifier
Part Number Ordering Information
Part Number Devices Per Reel Reel Siz e
SXA-389 1000 7"
Part Symbolization The part will be symbolized with a "XA3" designator on the top surface of the package. Pin Description
Function B a se GND & Emitter Collector B a se P i n Connection to ground. Use via holes to reduce lead inductance. Place vias as close to ground leads as possible. Collector Pin Description
Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression: IDVCC (max) < (TJ - TL)/Rth,j-l
ESD: Class 1B (Passes 500V ESD Pulse)
Appropriate precautions in handling, packaging and testing devices must be observed.
GND & Emitter Same as Pin 2
Package Dimensions
.059
(See SMDI MPO-100136 for tolerances)
.161 .096 .041 .008
3 .016REF 2 .118 .059 1 .029 .019 .059 Ref .118REF
.045 Min
.177
4
XA3
.009 .065 Min .016
.085 Min
MARKING AREA
DOT DENOTES PIN 1
.041REF .161 REF
TOP VIEW
5
.015TYP(4X)
PCB Pad Layout
Recommended Mounting Configuration for Optimum RF and Thermal Performance
Ground Plane Plated Thru Holes (0.020" DIA) SXA-389
Machine Screws (Optional)
DIMENSIONS ARE IN INCHES [MM]
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
http://www.sirenza.com
EDS-102231 Rev C
7

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