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| SI6802DQ Vishay Siliconix N-Channel, Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) 0.075 @ VGS = 4.5 V 0.110 @ VGS = 3.0 V ID (A) "3.3 "2.7 D TSSOP-8 D S S G 1 2 3 4 Top View S* N-Channel MOSFET D 8 D S S D *Source Pins 2, 3, 6, and 7 must be tied common. G SI6802DQ 7 6 5 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a 150 C) Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C ID TA = 70_C IDM IS PD TJ, Tstg Symbol VDS VGS Limit 20 "12 "3.3 "2.6 "20 1.25 1.5 Unit V A W 1.0 -55 to 150 _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Notes a. Surface Mounted on FR4 Board, t v 10 sec. Document Number: 70188 S-49520--Rev. C, 18-Dec-96 www.vishay.com S FaxBack 408-970-5600 Symbol RthJA Limit 83 Unit _C/W 2-1 SI6802DQ Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current VGS(th) IGSS IDSS VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "12 V VDS = 20 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 70_C VDS w 5 V, VGS = 4.5 V VDS w 5 V, VGS = 3.0 V VGS = 4.5 V, ID = 3.3 A VGS = 3.0 V, ID = 2.7 A VDS = 10 V, ID = 3.3 A IS = 1.25 A, VGS = 0 V 15 A 6 0.048 0.067 10.3 0.7 1.2 0.075 0.110 W S V 0.6 "100 1 25 V nA mA Symbol Test Condition Min Typ Max Unit On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea rDS(on) gfs VSD Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = 1.25 A, di/dt = 100 A/ms VDD = 6 V, RL = 20 W V, ID ^ 0.3 A, VGEN = 4 5 V RG = 6 W 03A 4.5 V, VDS = 6 V, VGS = 4 5 V ID = 0 3 A V 4.5 V, 0.3 4.5 1.0 0.7 8 6 12 16 52 20 15 25 30 80 ns 9.0 nC C Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. www.vishay.com S FaxBack 408-970-5600 2-2 Document Number: 70188 S-49520--Rev. C, 18-Dec-96 SI6802DQ Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 20 VGS = 4.5, 4, 3.5, 3 V 16 I D - Drain Current (A) I D - Drain Current (A) 16 20 TC = -55_C 25_C Transfer Characteristics 12 2.5 V 12 125_C 8 8 2V 4 1.5 V 0 0 1 2 3 4 5 6 7 8 4 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.30 1200 Capacitance r DS(on) - On-Resistance ( W ) 0.24 C - Capacitance (pF) 900 0.18 600 Coss 300 Crss Ciss 0.12 VGS = 3 V VGS = 4.5 V 0.06 0 0 4 8 12 16 20 0 0 4 8 12 16 20 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) 5 ID = 0.3 A V GS - Gate-to-Source Voltage (V) Gate Charge 2.0 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 3.3 A r DS(on) - On-Resistance ( W ) (Normalized) 3 4 5 4 1.5 3 VDS = 4.5 V 6V 2 8V 1 1.0 0.5 0 0 1 2 0 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C) Document Number: 70188 S-49520--Rev. C, 18-Dec-96 www.vishay.com S FaxBack 408-970-5600 2-3 SI6802DQ Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 20 0.30 On-Resistance vs. Gate-to-Source Voltage r DS(on) - On-Resistance ( W ) 10 I S - Source Current (A) 0.24 0.18 TJ = 150_C TJ = 25_C 0.12 ID = 3.3 A 0.06 1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 0 2 4 6 8 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage 0.5 50 Single Pulse Power 0.3 V GS(th) Variance (V) ID = 250 mA Power (W) 0.1 40 30 -0.1 20 -0.3 10 -0.5 -50 0 -25 0 25 50 75 100 125 150 0.01 0.1 1 Time (sec) 10 30 TJ - Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 Notes: 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 83_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 1 10 30 Square Wave Pulse Duration (sec) www.vishay.com S FaxBack 408-970-5600 Document Number: 70188 S-49520--Rev. C, 18-Dec-96 2-4 |
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