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| Schottky Barrier Diodes (SBD) MA3J741D, MA3J741E Silicon epitaxial planar type Unit : mm For switching circuits 0.425 2.1 0.1 1.25 0.1 0.425 + 0.1 2.0 0.2 1.3 0.1 0.65 0.65 I Absolute Maximum Ratings Ta = 25C Parameter Reverse voltage (DC) Peak reverse voltage Forward current (DC) Peak forward current Single Double* Single Double* Tj Tstg IFM Symbol VR VRM IF Rating 30 30 30 20 150 110 125 -55 to +125 C C mA Unit V V mA 0.9 0.1 EIAJ : SC-70 Flat S-Mini Type Package (3-pin) MA3J741D MA3J741E 1 Cathode 1 Anode 1 2 Cathode 2 Anode 2 3 Anode 1,2 Cathode 1,2 Junction temperature Storage temperature Note) * : Value per hcip Marking Symbol * MA3J741D : M2P * MA3J741E : M2R Internal Connection 1 3 2 2 1 3 I Electrical Characteristics Ta = 25C Parameter Reverse current (DC) Forward voltage (DC) Symbol IR VF1 VF2 Terminal capacitance Reverse recovery time* Ct trr VR = 30 V IF = 1 mA IF = 30 mA VR = 1 V, f = 1 MHz IF = IR = 10 mA Irr = 1 mA, RL = 100 Vin = 3 V(peak), f = 30 MHz RL = 3.9 k, CL = 10 pF Conditions D Min Typ Max 1 0.4 1 0.15 - 0.05 * Two MA3J741s are contained in one package (S-mini type 3-pin) * Low forward rise voltage (VF) and satisfactory wave detection efficiency () * Small temperature coefficient of forward characteristic * Extremely low reverse current IR 1 3 2 + 0.1 0.3 - 0 I Features E Unit A V V pF ns 1.5 1 Detection efficiency 65 % Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 2. Rated input/output frequency: 2 000 MHz 3. * : trr measuring instrument Bias Application Unit N-50BU Input Pulse Output Pulse tr 10% tp t IF trr t Irr = 1 mA IF = 10 mA IR = 10 mA RL = 100 A VR Pulse Generator (PG-10N) Rs = 50 W.F.Analyzer (SAS-8130) Ri = 50 90% tp = 2 s tr = 0.35 ns = 0.05 1 MA3J741D, MA3J741E IF V F 103 1.0 Schottky Barrier Diodes (SBD) VF Ta 103 IR VR 102 75C 25C Ta = 125C - 20C Forward current IF (mA) 0.8 102 IF = 30 mA Ta = 125C Forward voltage VF (V) Reverse current IR (A) 10 0.6 10 mA 0.4 10 75C 1 1 25C 10-1 10-1 0.2 1 mA 10-2 0 0.2 0.4 0.6 0.8 1.0 1.2 0 -40 10-2 0 40 80 120 160 200 0 5 10 15 20 25 30 Forward voltage VF (V) Ambient temperature Ta (C) Reverse voltage VR (V) Ct VR 3 f = 1 MHz Ta = 25C 103 IR T a Terminal capacitance Ct (pF) 102 2 Reverse current IR (A) VR = 30 V 3V 1V 10 1 1 10-1 0 0 5 10 15 20 25 30 10-2 -40 0 40 80 120 160 200 Reverse voltage VR (V) Ambient temperature Ta (C) 2 |
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