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| SBD T y p e : C10T04Q C10T04 OUTLINE DRAWING FEATURES *SQUARE-PAK TO-263AB(SMD) Packaged in 24mm Tape and Reel *Dual Diodes - Cathode Common *Low Forward Voltage Drop *High Surge Capability *Tj=150 C operation Maximum Ratings Rating Repetitive Peak Reverse Voltage Non-repetitive Peak Reverse Voltage Average Rectified Output Current RMS Forward Current Surge Forward Current Operating JunctionTemperature Range Storage Temperature Range Approx Net Weight: 1.4g Symbol VRRM VRSM IO IF(RMS) IFSM Tjw Tstg 120 10 C10T04Q 40 45 50 Hz Full Sine Wave Tc=116C Resistive Load 11.1 50Hz Full Sine Wave ,1cycle Non-repetitive -40 to +150 -40 to +150 Unit V V A A A C C Electrical * Thermal Characteristics Characteristics Peak Reverse Current Peak Forward Voltage Thermal Resistance Symbol IRM VFM Conditions Tj= 25C, VRM= VRRM per arm Tj= 25C, IFM= 5 A per arm Min. Typ. Max. 5 0.55 3 Unit mA V C /W Rth(j-c) Junction to Case C_T_ OUTLINE DRAWING (Dimensions in mm) FORWARD CURRENT VS. VOLTAGE C10T04Q/C10T04Q-11A (per Arm) 20 INSTANTANEOUS FORWARD CURRENT (A) 10 5 2 Tj=25C Tj=150C 1 0.5 0 0.2 0.4 0.6 0.8 1.0 1.2 INSTANTANEOUS FORWARD VOLTAGE (V) 0 180 CONDUCTION ANGLE AVERAGE FORWARD POWER DISSIPATION C10T04Q/C10T04Q-11A (Total) RECT 180 8 AVERAGE FORWARD POWER DISSIPATION (W) 7 6 5 4 3 2 1 0 0 2 4 6 8 SINE WAVE 10 12 AVERAGE FORWARD CURRENT (A) PEAK REVERSE CURRENT VS. PEAK REVERSE VOLTAGE Tj= 150 C 200 C10T04Q/C10T04Q-11A (per Arm) PEAK REVERSE CURRENT (mA) 100 50 0 10 20 30 40 PEAK REVERSE VOLTAGE (V) AVERAGE REVERSE POWER DISSIPATION C10T04Q/C10T04Q-11A (Total) RECT 180 8 AVERAGE REVERSE POWER DISSIPATION (W) 7 6 5 SINE WAVE 4 3 2 1 0 0 10 20 30 40 REVERSE VOLTAGE (V) 0 180 CONDUCTION ANGLE AVERAGE FORWARD CURRENT VS. CASE TEMPERATURE V RM =40 V C10T04Q/C10T04Q-11A (Total) RECT 180. 12 AVERAGE FORWARD CURRENT (A) 10 SINE WAVE 8 6 4 2 0 0 25 50 75 100 125 150 CASE TEMPERATURE (C) SURGE CURRENT RATINGS f=50Hz,Sine Wave,Non-Repetitive,No Load 140 C10T04Q/C10T04Q-11A 120 SURGE FORWARD CURRENT (A) 100 80 60 40 I FSM 0.02s 20 0 0.02 0.05 0.1 0.2 0.5 1 2 TIME (s) JUNCTION CAPACITANCE VS. REVERSE VOLTAGE Tj=2 5 C,V m = 20m V RM S ,f= 100 kHz ,Ty pica l V alue C10T04Q/C10T04Q-11A (per Arm) 1000 JUNCTION CAPACITANCE (pF) 500 200 100 0.5 1 2 5 10 20 50 REVERSE VOLTAGE (V) |
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