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| STZ6.8T Diodes Zener diode STZ6.8T !Applications Constant voltage control Noise suppression on signal line !External dimensions (Units : mm) 2.90.2 1.90.2 0.95 0.95 1.1 -0.1 0.80.1 +0.2 0.4 -0.05 0.15 -0.06 (All leads have the same dimensions) !Construction Silicon epitaxial planar ROHM : SMD3 EIAJ : SC-59 JEDEC : SOT-346 !Circuit !Absolute maximum ratings (Ta=25C) Parameter Power dissipation Junction temperature Storage temperature Total of 2 elements. Symbol P Limits 200 150 -55+150 Unit mW C C Tj Tstg !Electrical characteristics (Ta=25C) Parameter Zener voltage Reverse current Operating resistance Rising operating resistance Symbol VZ IR Zz ZZK Min. 6.47 - - - Typ. - - - - Max. 7.14 0.5 40 60 Unit V A IZ=5mA VR=3.5V IZ=5mA IZ=0.5mA Conditions 0.30.6 ZOP !Features 1) Small surface mounting type. (SMD3) 2) Multiple diodes with common anode configuration. 3) High reliability. 1.6 +0.2 -0.1 2.80.2 00.1 +0.1 +0.1 STZ6.8T Diodes !Electrical characteristic curves (Ta=25C) 100m 10m 1m -20C 25C 300 POWER DISSIPATION : Pd (mW) 70C ZENER CURRENT : Iz (A) 200 100 10 1 100n 2 3 4 5 6 7 8 100 0 0 25 50 100 150 ZENER VOLTAGE : Vz (V) AMBIENT TEMPERATURE : Ta (C) Fig.1 Zener voltage characteristics Fig.2 Derating curve |
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