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| SEMICONDUCTOR TECHNICAL DATA DC/DC CONVERTER APPLICATIONS. FEATURES Composite type with a PNP transistor and a Schottky barrier diode contained in one package facilitating high-density mounting. The KTX512T is formed with two chips, one being equivalent to KTX512T EPITAXIAL PLANAR PNP TRANSISTOR SCHOTTKY BARRIER TYPE DIODE E K 1 B K 6 Ultrasmall package facilitates miniaturization in end products (mounting height 0.7 ). A F the KTA1535T and the other the KDR411S, encapsulated in one packages. 2 5 DIM A B C D E D F G H I J K L 3 4 MILLIMETERS _ 2.9 + 0.2 1.6+0.2/-0.1 _ 0.70 + 0.05 _ 0.4 + 0.1 2.8+0.2/-0.3 _ 1.9 + 0.2 0.95 _ 0.16 + 0.05 0.00-0.10 0.25+0.25/-0.15 0.60 0.55 EQUIVALENT CIRCUIT (TOP VIEW) C J I 6 5 4 Marking 6 5 4 L G G J H Lot No. Q1 D1 Type Name DB 1 2 3 1. Q 1 EMITTER 2. Q 1 BASE 3. D 1 ANODE 4. Q 1, D 1 COMMON (COLLECTOR, CATHODE) 5. Q 1, D 1 COMMON (COLLECTOR, CATHODE) 6. Q 1, D 1 COMMON (COLLECTOR, CATHODE) 1 2 3 TS6 MAXIMUM RATING (Ta=25 Transistor Q1 ) SYMBOL VCBO VCEO VEBO DC Pulse IC ICP IB PC * Tj Tstg 0.8 ) RATING -20 -20 -5 -3 -5 600 0.9 150 -55 150 UNIT V V V A A mA W CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range * Package mounted on a ceramic board (600 Diode (SBD) D1 CHARACTERISTIC Peak Reverse Voltage DC Reverse Voltage Average Output Current Peak Forward Surge Current Junction Temperature Storage Temperature Range SYMBOL VRRM VR ID IFSM Tj Tstg RATING 40 20 0.5 3 125 -40 125 UNIT V V A A 2002. 1. 24 Revision No : 1 1/5 KTX512T ELECTRICAL CHARACTERISTICS (Ta=25 ) Transistor Q1 CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain Transition Frequency Collector Output Capacitance Turn-On Time Swiitching Time SYMBOL ICBO IEBO V(BR)CBO V(BR)CEO V(BR)EBO VCE(sat) VBE(sat) hFE fT Cob ton INPUT TEST CONDITION VCB=-12V, IE=0 VEB=-4V, IC=0 IC=-10 A, IE=0 IC=-1mA, IB=0 IE=-10 A, IC=0 IC=-1.5A, IB=-30mA IC=-1.5A, IB=-30mA VCE=-2V, IC=-500mA VCE=-2V, IC=-500mA VCB=-10V, f=1MHz PW=20s DC < 1% = IB1 I B2 1 50 VR 220F 470F VCC =-5V RL MIN. -20 -20 -5 200 - TYP. -130 -0.85 160 45 30 MAX. -0.1 -0.1 -165 -1.2 560 - UNIT A A V V V mV V MHz pF OUTPUT Storage Time tstg - 90 - nS Fall Time tf V BE =5V -20IB1=20IB2=IC =-1.5A - 10 - Diode (SBD) D1 CHARACTERISTIC Forward Voltage Reverse Current Total Capacitance SYMBOL VF (1) VF (2) IR CT IF=10mA IF=500mA VR=10V VR=10V, f=1MHz TEST CONDITION MIN. TYP. 20 MAX. 0.3 0.5 30 UNIT V V A pF 2002. 1. 24 Revision No : 1 2/5 KTX512T Q 1 (TRANSISTOR) I C - V CE -2.0 COLLECTOR CURRENT I C (A) mA I C - V CE COLLECTOR CURRENT I C (mA) -12mA -10mA -8mA -6mA -4mA -2mA IB=0mA -1.8 -1.6 -1.4 -1.2 -1.0 -0.8 -0.6 -0.4 -0.2 0 0 -14mA -200 -180 -160 -140 -120 -100 -80 -60 -40 -20 0 0 -1 -2 -3 -0.8mA -0.7mA -0.6mA -0.5mA -0.4mA -0.3mA -1 6 -0.2mA -0.1mA IB=0mA -0.2 -0.4 -0.6 -0.8 -1.0 -4 -5 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR-EMITTER VOLTAGE VCE (V) h FE - I C COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 1K DC CURRENT GAIN h FE 500 300 VCE =-2V VCE(sat) - I C -0.5 -0.3 I C /I B =20 -0.1 -0.05 -0.03 100 50 30 -0.01 -0.03 -0.1 -0.3 -1 -3 -0.01 -0.005 -0.01 -0.03 -0.1 -0.3 -1 -3 COLLECTOR CURRENT I C (A) COLLECTOR CURRENT I C (A) VCE(sat) - I C COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (mV) -1 -0.5 -0.3 BASE-EMITTER SATURATION VOLTAGE VBE(sat) (V) I C /I B =50 VBE(sat) - I C -10 -5 -3 I C /I B =50 -0.1 -0.05 -0.03 -1 -0.5 -0.3 -0.01 -0.01 -0.03 -0.1 -0.3 -1 -3 -0.1 -0.01 -0.03 -0.1 -0.3 -1 -3 COLLECTOR CURRENT I C (A) COLLECTOR CURRENT I C (A) 2002. 1. 24 Revision No : 1 3/5 KTX512T I C - V BE TRANSITION FREQUENCY fT (MHz) -3.5 COLLECTOR CURRENT I C (A) -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 0 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 VCE =-2V fT - I C 1K 500 300 VCE =-2V 100 50 30 -0.01 -0.03 -0.1 -0.3 -1 -3 BASE-EMITTER VOLTAGE VBE (V) COLLECTOR CURRENT I C (A) C ob - V CB COLLECTOR OUTPUT CAPACITANCE C ob (pF) 1K 500 300 -10 f=1MHz SAFE OPERATING AREA I C MAX.(PULSED) -5 COLLECTOR CURRENT I C (A) -3 -1 -0.5 -0.3 -0.1 -0.05 I C MAX (CONTINUOUS) DC 10 OP ER 10 mS S* 0 50 S* 1m 0m S * * 100 50 30 AT IO N 10 -1 -3 -5 -10 -30 COLLECTOR-BASE VOLTAGE VCB (V) -0.02 -0.2 * SINGLE NONREPETITIVE PULSE Ta=25 C CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE MOUNTED ON A CERAMIC BOARD (600mm 2 0.8mm) -1 -3 -10 -20 COLLECTOR-EMITTER VOLTAGE V CE (V) Pc - Ta COLLECTOR POWER DISSIPATION PC (W) 1.2 1.0 0.8 0.6 0.4 0.2 0 FORWARD CURRENT I F (A) MOUNTED ON A CERAMIC BOARD (600mm 2 0.8mm) D 1 (SBD) 1 IF - V F 100m Ta =1 25 Ta C =7 5 C Ta =2 5 C Ta =-2 5 C 10m 1m 0 20 40 60 80 100 120 140 160 100 0 0.1 0.2 0.3 0.4 0.5 0.6 AMBIENT TEMPERATURE Ta ( C) FORWARD VOLTAGE V F (V) 2002. 1. 24 Revision No : 1 4/5 KTX512T 10m REVERSE CURRENT I R (A) Ta=125 C CAPACITANCE BETWEEN TERMINALS C T (pF) I R - VR C T - VR 1K 1m Ta=75 C 100 100 10 Ta=25 C 10 1 0 5 10 15 20 25 30 35 1 0 10 20 30 40 REVERSE VOLTAGE V R (V) REVERSE VOLTAGE VR (V) 2002. 1. 24 Revision No : 1 5/5 |
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