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| BAT 60B Silicon Schottky Diode * Rectifier Schottky diode for mobile communication * Low voltage high inductane * For power supply * For clamping and proptection in low voltage application * For detection and step-up-conversion 2 1 VPS05176 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BAT 60B Marking blue/5 Ordering Code Q62702-A1189 Pin Configuration 1=C 2=A Package SOD-323 Maximum Ratings Parameter Diode reverse voltage Forward current Surge forward current (t< 100s) Total power dissipation, T S = 28 C Junction temperature Storage temperature Maximum Ratings Junction - ambient 1) Symbol Value 10 3 5 1350 150 - 55 ...+150 Unit V A mA mW C VR IF IFSM Ptot Tj Tstg RthJA RthJS 160 90 K/W Junction - soldering point 1) Package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 0.5cm 2 Cu Semiconductor Group Semiconductor Group 11 Sep-04-1998 1998-11-01 BAT 60B Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter DC characteristics Reverse current Symbol min. Values typ. max. A 5 10 100 410 0.24 0.3 0.4 V Unit IR VR = 5 V VR = 8 V Reverse current IR - VR = 5 V, TA = 80 C VR = 8 V, TA = 80 C Forward voltage VF I F = 10 mA I F = 100 mA I F = 1000 mA AC characteristics Diode capacitance CT - 20 - pF VR = 5 V, f = 1 MHz Semiconductor Group Semiconductor Group 22 Sep-04-1998 1998-11-01 BAT 60B Forward current IF = f (TA*;TS) * Package mounted on epoxy Reverse current IR = f (TA) VR = 8V 10 0 A 10 -1 3200 mA 2400 10 -2 TS IR 120 C IF 2000 10 -3 1600 10 -4 1200 TA 10 -5 800 10 -6 400 0 0 20 40 60 80 100 150 10 -7 -20 0 20 40 60 80 100 120 C 160 TA,TS TA Permissible Pulse Load R thJS = f(t p) Permissible Pulse Load IFmax / IFDC = f(tp) 10 2 10 2 K/W IFmax / IFDC - 10 1 10 1 10 0 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 RthJS 10 -1 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp Semiconductor Group Semiconductor Group 33 Sep-04-1998 1998-11-01 |
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