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| AP4407M Advanced Power Electronics Corp. Simple Drive Requirement Low On-resistance Fast Switching D D D D P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) G -30V 14m -10.7A ID SO-8 S S S Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SO-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. D G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25 ID@TA=70 IDM PD@TA=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating -30 25 -10.7 -8.6 -50 2.5 0.02 -55 to 150 -55 to 150 Units V V A A A W W/ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-amb Parameter Thermal Resistance Junction-ambient 3 Value Max. 50 Unit /W Data and specifications subject to change without notice 200728031 AP4407M Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS BVDSS/Tj Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Test Conditions VGS=0V, ID=-250uA Min. Typ. Max. Units -30 -1 -0.015 14 25 -3 -1 -25 100 45 - V V/ m m V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=-1mA RDS(ON) VGS=-10V, ID=-10A VGS=-4.5V, ID=-5A 13 28 5.2 19.8 12 11 97 72 590 465 VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=70 C) o o VDS=VGS, ID=-250uA VDS=-10V, ID=-10A VDS=-30V, VGS=0V VDS=-24V, VGS=0V VGS= 25V ID=-10A VDS=-24V VGS=-4.5V VDS=-15V ID=-1A RG=6.8,VGS=-10V RD=15 VGS=0V VDS=-25V f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 1960 3200 Source-Drain Diode Symbol VSD Parameter Forward On Voltage 2 Test Conditions IS=-2.0A, VGS=0V IS=-10A, VGS=0V, dI/dt=100A/s Min. Typ. Max. Units 36 34 -1.2 V ns nC trr Qrr Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in2 copper pad of FR4 board ; 125 /W when mounted on min. copper pad. AP4407M 40 42 T A =25 o C 36 -ID , Drain Current (A) 30 -ID , Drain Current (A) -10V -5.0V -4.5V -4.0V 36 T A =150 o C 32 28 -10V -5.0V -4.5V -4.0V 24 24 20 18 16 V G =-3.0V 12 12 V G =-3.0V 8 4 6 0 0 1 2 3 0 0 1 1 2 2 -V DS , Drain-to-Source Voltage (V) -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 25 1.80 I D =-10A T A =25 o C Normalized RDS(ON) 20 1.60 I D =-10A V GS = -10V 1.40 RDS(ON) (m ) 1.20 15 1.00 0.80 10 0.60 3 5 7 9 11 -50 0 50 100 150 -V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( o C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 3 100.00 10.00 2 -IS(A) 1.00 -VGS(th) (V) 1 0 1.3 1.5 -50 T j =150 o C T j =25 o C 0.10 0.01 0.1 0.3 0.5 0.7 0.9 1.1 0 50 100 150 -V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C) Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP4407M f=1.0MH 14 10000 12 -VGS , Gate to Source Voltage (V) I D = -10A V DS = -24V Ciss 10 C (pF) 8 1000 6 Coss Crss 4 2 0 0 2 4 6 8 10 12 14 16 18 100 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) -V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 100us 10 Normalized Thermal Response (Rthja) DUTY=0.5 0.2 0.1 0.1 1ms 1 0.05 -ID (A) 10ms 100ms 0.02 0.01 PDM 0.01 Single Pulse t T Duty factor = t/T Peak Tj = PDM x Rthja + T a 0.1 T A =25 o C Single Pulse 1s 10s DC 10 100 Rthja = 125/W 0.01 0.001 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 -V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance VDS 90% VG QG -4.5V QGS QGD 10% VGS td(on) tr td(off) tf Charge Q Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform |
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