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| PRELIMINARY DATA SHEET NPN SILICON RF TRANSISTOR 2SC5507 NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD FEATURES * Low noise and high gain with low collector current * NF = 1.2 dB, Ga = 16 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 2 mA * Maximum stable power gain: MSG = 22 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 5 mA * fT = 25 GHz technology * Flat-lead 4-pin thin super mini-mold (t = 0.59 mm) ORDERING INFORMATION Part Number 2SC5507 2SC5507-T2 Quantity Loose product (50 pcs) Taping product (3 kpcs/reel) Packaging Style * 8 mm wide emboss taping * 1 pin (emitter), 2 pin (collector) feed hole direction Remark To order evaluation samples, consult your NEC sales representative (available in 50-pcs units). ABSOLUTE MAXIMUM RATINGS Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Ptot Note Ratings 15 3.3 1.5 12 39 150 -65 to +150 Unit V V V mA mW C C Tj Tstg Note TA = +25 C (free air) THERMAL RESISTANCE Item Junction to Case Resistance Junction to Ambient Resistance Symbol Rth j-c Rth j-a Value 240 650 Unit C/W C/W Because this product uses high-frequency technology, avoid excessive static electricity, etc. The information in this document is subject to change without notice. Document No. P13864EJ1V0DS00 (1st edition) Date Published March 1999 N CP(K) Printed in Japan (c) 1999 2SC5507 ELECTRICAL CHARACTERISTICS (TA = +25 C) Parameter DC characteristics Collector Cut-off Current Emitter Cut-off Current DC Current Gain RF Characteristics Reverse Transfer Capacitance Gain Bandwidth Product Noise Figure Insertion Power Gain Maximum Stable Power Gain Output Power at 1 dB Compression Point Output Power at Third Order Intercept Point Cre Note 2 Symbol Test Conditions MIN. TYP. MAX. Unit ICBO IEBO hFE Note 1 VCB = 5 V, IE = 0 VEB = 1 V, IC = 0 VCE = 2 V, IC = 5 mA - - 50 - - 70 100 100 100 nA nA - VCB = 2 V, IE = 0, f = 1 MHz VCE = 3 V, IC = 10 mA, f = 2 GHz VCE = 2 V, IC = 2 mA, f = 2 GHz, ZS = Zopt VCE = 2 V, IC = 5 mA, f = 2 GHz VCE = 2 V, IC = 5 mA, f = 2 GHz VCE = 2 V, IC = 5 mA Note 4 - 20 - 14 - - 0.08 25 1.2 17 22 5 0.12 - 1.5 - - - pF GHz dB dB dB dBm fT NF |S21e|2 MSG Note 3 P-1 , f = 2 GHz OIP3 VCE = 2 V, IC = 5 mA Note 4 , f = 2 GHz - 15 - - Notes 1. Pulse measurement PW 350 s, Duty cycle 2% 2. Emitter to base capacitance measured using capacitance meter (self-balancing bridge method) when the emitter is connected to the guard pin S21 3. MSG = S12 4. Collector current when P-1 is output hFE CLASSIFICATION Rank Marking hFE FB T78 50 to 100 2 Preliminary Data Sheet P13864EJ1V0DS00 2SC5507 TYPICAL CHARACTERISTICS (TA = +25 C) Thermal/DC Characteristics Total Power Dissipation vs. Ambient Temperature, Case Temperature 250 Total Power Dissipation PT (mW) Collector Current vs. DC Base Voltage 50 VCE = 2 V Collector Current IC (mA) 200 PT-TA: Free air PT-TA: Mounted on ceramic board (15 mm x 15 mm, t = 0.6 mm) PT-TC: When case temperature is specified 40 150 30 100 20 50 10 0 0 25 50 75 100 125 150 0 0.2 0.4 0.6 0.8 1.0 1.2 Ambient Temperature TA (C), Case Temperature TC (C) DC Base Voltage VBE (V) Collector Current vs. Collector to Emitter Voltage 25 300 A 280 A 260 A 240 A 220 A 200 A 180 A 160 A 140 A 120 A 100 A 80 A 60 A 40 A IB = 20 A DC Current Gain vs. Collector Current 200 100 DC Current Gain hFE VCE = 2 V Collector Current IC (mA) 20 15 10 10 5 1 0.001 0 1 2 3 4 5 0.01 0.1 1 10 100 Collector to Emitter Voltage VCE (V) Collector Current IC (mA) Capacitance/fT Characteristics Reverse Transfer Capacitance vs. Collector to Base Voltage Reverse Transfer Capacitance Cre (pF) Gain Bandwidth Product vs. Collector Current 30 Gain Bandwidth Product fT (GHz) 0.30 f = 1 MHz 0.25 0.20 0.15 0.10 0.05 VCE = 3 V f = 2 GHz 25 20 15 10 5 0 0 1.0 2.0 3.0 4.0 5.0 1 10 Collector Current IC (mA) 100 Collector to Base Voltage VCB (V) Preliminary Data Sheet P13864EJ1V0DS00 3 2SC5507 Gain Characteristics Insertion Power Gain, Maximum Available Power Gain, Maximum Stable Power Gain vs. Frequency Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) 40 35 30 25 20 15 10 5 0 0.1 1.0 Frequency f (GHz) 10.0 |S21e|2 MSG MAG VCE = 2 V IC = 5 mA Insertion Power Gain, Maximum Stable Power Gain vs. Collector Current Insertion Power Gain |S21e|2 (dB) Maximum Stable Power Gain MSG (dB) Insertion Power Gain, Maximum Available Power Gain, Maximum Stable Power Gain vs. Collector Current Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) 30 25 20 |S21e|2 15 10 5 0 MSG f = 1 GHz VCE = 2 V 30 25 MSG 20 15 10 5 0 |S21e|2 MAG f = 2 GHz VCE = 2 V 1 10 Collector Current IC (mA) 100 1 10 Collector Current IC (mA) 100 Output Characteristics Output Power, Collector Current vs. Input Power 10 f = 1 GHz VCE = 2 V Output Power Pout (dBm) Output Power, Collector Current vs. Input Power 25 10 f = 2 GHz VCE = 2 V Collector Current IC (mA) Output Power Pout (dBm) 25 Pout Collector Current IC (mA) Pout 20 5 5 20 0 15 0 15 -5 IC -10 10 -5 IC 10 5 -10 5 -15 -30 0 -25 -20 -15 -10 -5 Input Power Pin (dBm) -15 -30 0 -25 -20 -15 -10 -5 Input Power Pin (dBm) 4 Preliminary Data Sheet P13864EJ1V0DS00 2SC5507 Noise Characteristics Noise Figure, Associated Gain vs. Collector Current 6 5 Noise Figure NF (dB) Noise Figure, Associated Gain vs. Collector Current 30 6 5 Noise Figure NF (dB) 30 f = 1.5 GHz VCE = 2 V 25 20 15 NF 10 5 0 Ga f = 1.0 GHz VCE = 2 V Associated Gain Ga (dB) 4 3 2 1 0 NF 20 15 10 5 0 4 3 2 1 0 Ga 1 10 Collector Current IC (mA) 100 1 10 Collector Current IC (mA) 100 Noise Figure, Associated Gain vs. Collector Current 6 5 Noise Figure NF (dB) Noise Figure, Associated Gain vs. Collector Current 30 6 5 Noise Figure NF (dB) f = 2.0 GHz VCE = 2 V 30 f = 2.5 GHz VCE = 2 V 25 20 15 NF 10 5 0 Associated Gain Ga (dB) 4 3 2 1 0 Ga 20 15 10 NF 5 0 4 3 2 1 0 Ga 1 10 Collector Current IC (mA) 100 1 10 Collector Current IC (mA) 100 Preliminary Data Sheet P13864EJ1V0DS00 Associated Gain Ga (dB) 25 Associated Gain Ga (dB) 25 5 2SC5507 S PARAMETER VCE = 2 V, IC = 2 mA Frequency GHz MAG. S11 ANG. MAG. S21 ANG. MAG. S12 ANG. MAG. S22 ANG. 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 0.90 0.89 0.89 0.88 0.87 0.87 0.86 0.84 0.83 0.82 0.80 0.79 0.77 0.76 0.74 0.72 0.70 0.68 0.66 0.64 0.62 0.60 0.58 0.56 0.55 0.52 0.50 0.47 0.42 0.40 0.47 0.49 0.56 0.63 0.69 0.74 0.79 -3.7 -7.1 -10.6 -14.2 -17.6 -21.0 -24.6 -28.0 -31.5 -35.0 -38.6 -42.0 -45.8 -49.4 -53.4 -57.1 -61.0 -65.0 -69.2 -73.3 -77.7 -82.1 -86.9 -91.8 -97.1 -102.5 -108.7 -115.5 -120.2 -119.0 -159.3 163.9 141.2 123.9 111.6 102.1 95.1 6.45 6.25 6.12 6.02 5.96 5.87 5.79 5.69 5.64 5.54 5.50 5.42 5.37 5.28 5.25 5.19 5.14 5.06 5.04 4.98 4.91 4.82 4.78 4.68 4.62 4.53 4.46 4.29 4.11 4.06 3.24 2.74 2.34 2.00 1.70 1.44 1.19 174.8 170.8 167.2 163.6 160.2 156.9 153.4 150.3 147.1 143.8 140.7 137.7 134.5 131.6 128.5 125.2 122.4 119.2 116.1 113.0 109.9 106.9 103.6 100.6 97.5 94.1 90.8 87.5 85.2 84.6 66.5 45.5 26.7 9.3 -6.5 -21.4 -34.9 0.00 0.01 0.01 0.02 0.02 0.02 0.03 0.03 0.03 0.03 0.04 0.04 0.04 0.04 0.05 0.05 0.05 0.05 0.06 0.06 0.06 0.06 0.06 0.06 0.07 0.07 0.07 0.07 0.06 0.06 0.07 0.07 0.08 0.09 0.11 0.12 0.13 81.9 77.9 75.5 75.7 74.1 72.4 70.0 68.7 66.9 65.2 63.3 62.2 60.1 58.4 57.0 55.0 53.1 52.1 50.9 49.1 46.6 45.6 43.8 42.2 40.5 39.0 37.0 34.8 34.7 38.1 33.4 33.5 35.9 37.0 35.9 31.3 25.3 0.98 0.95 0.94 0.92 0.91 0.90 0.89 0.88 0.87 0.86 0.84 0.83 0.82 0.81 0.80 0.78 0.77 0.76 0.75 0.73 0.72 0.71 0.69 0.68 0.66 0.65 0.63 0.62 0.61 0.61 0.51 0.44 0.40 0.38 0.39 0.44 0.52 -3.6 -6.0 -7.9 -9.5 -11.0 -12.7 -14.3 -15.6 -17.3 -18.9 -20.3 -21.8 -23.3 -24.9 -26.4 -27.8 -29.3 -30.7 -32.2 -33.6 -35.1 -36.3 -37.8 -39.2 -40.5 -41.9 -43.0 -44.1 -44.0 -45.4 -55.3 -69.8 -88.9 -112.9 -138.6 -163.4 175.7 6 Preliminary Data Sheet P13864EJ1V0DS00 2SC5507 VCE = 2 V, IC = 5 mA Frequency GHz MAG. S11 ANG. MAG. S21 ANG. MAG. S12 ANG. MAG. S22 ANG. 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 0.82 0.82 0.80 0.79 0.78 0.76 0.74 0.72 0.70 0.68 0.66 0.63 0.61 0.58 0.56 0.53 0.51 0.49 0.46 0.44 0.42 0.40 0.38 0.36 0.35 0.33 0.32 0.30 0.25 0.23 0.31 0.42 0.51 0.58 0.65 0.71 0.76 0.78 0.79 -4.7 -9.2 -13.8 -18.0 -22.4 -26.6 -31.1 -35.3 -39.4 -43.6 -47.9 -51.9 -56.2 -60.3 -64.7 -68.9 -73.3 -77.6 -82.0 -86.7 -91.6 -96.5 -101.9 -107.6 -113.6 -120.2 -127.9 -137.3 -144.7 -142.4 175.3 147.1 130.2 116.8 106.9 99.0 92.8 89.2 84.8 10.44 10.28 10.09 9.89 9.73 9.55 9.36 9.19 9.01 8.82 8.67 8.46 8.27 8.07 7.91 7.72 7.54 7.35 7.18 7.00 6.83 6.66 6.49 6.32 6.16 6.00 5.82 5.59 5.29 5.22 4.23 3.50 2.94 2.52 2.16 1.85 1.57 1.36 1.16 173.8 168.8 164.2 159.8 155.6 151.5 147.4 143.5 139.6 135.8 132.0 128.6 124.8 121.5 117.9 114.5 111.3 108.2 105.0 102.0 98.9 95.9 92.9 90.0 87.0 84.1 80.9 77.9 76.3 76.0 62.3 41.8 25.6 9.8 -5.0 -19.3 -32.6 -44.5 -55.1 0.00 0.01 0.01 0.01 0.02 0.02 0.02 0.03 0.03 0.03 0.03 0.04 0.04 0.04 0.04 0.04 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.08 0.09 0.10 0.12 0.13 0.14 0.14 0.15 80.8 75.3 75.0 74.1 72.2 70.4 68.0 66.6 64.9 63.3 61.2 60.7 58.7 57.8 56.3 55.5 53.8 53.4 51.9 51.6 49.6 49.6 48.3 47.4 46.2 45.3 44.6 42.5 44.1 48.2 46.8 45.6 42.7 38.6 34.4 28.7 22.9 17.8 13.4 0.97 0.94 0.92 0.90 0.88 0.87 0.85 0.84 0.82 0.80 0.78 0.77 0.75 0.73 0.72 0.70 0.69 0.67 0.65 0.64 0.62 0.61 0.60 0.58 0.57 0.55 0.53 0.52 0.52 0.52 0.44 0.36 0.31 0.29 0.31 0.36 0.44 0.53 0.60 -4.1 -7.1 -9.4 -11.5 -13.4 -15.4 -17.3 -18.9 -20.8 -22.4 -23.9 -25.5 -26.9 -28.4 -29.7 -31.0 -32.3 -33.6 -34.9 -36.1 -37.2 -38.2 -39.5 -40.5 -41.7 -42.7 -43.4 -43.8 -43.2 -44.8 -48.3 -70.4 -89.6 -115.3 -143.0 -168.2 172.1 158.5 149.8 Preliminary Data Sheet P13864EJ1V0DS00 7 2SC5507 NOISE PARAMETER VCE = 2 V IC = 2 mA f = 2 GHz VCE = 2 V IC = 2 mA f = 1 GHz Unstable area Unstable area NFmin = 1.1 dB opt 1.5 dB NFmin = 1.0 dB opt 3. 2.5 5 3.0 dB dB 4.0 dB 2.0 dB dB dB 2.0 dB 2.5 3.5 3. dB 4.0 dB 0 dB dB 1.5 VCE = 2 V, IC = 2 mA f (GHz) 0.8 0.9 1.0 1.5 1.8 1.9 2.0 2.5 NFmin (dB) 0.93 0.95 0.97 1.08 1.14 1.16 1.18 1.29 Ga (dB) 22.9 22.2 21.6 18.8 17.5 17.1 16.7 15.2 opt Rn/50 MAG. 0.54 0.54 0.54 0.53 0.51 0.50 0.49 0.44 ANG. 13.3 14.9 16.4 24.6 30.3 32.4 34.6 47.7 0.47 0.47 0.47 0.45 0.43 0.42 0.41 0.35 VCE = 2 V, IC = 5 mA f (GHz) 0.8 0.9 1.0 1.5 1.8 1.9 2.0 2.5 NFmin (dB) 1.59 1.60 1.60 1.62 1.63 1.63 1.63 1.65 Ga (dB) 24.7 24.1 23.4 20.7 19.3 18.9 18.5 16.9 opt Rn/50 MAG. 0.38 0.38 0.38 0.36 0.34 0.33 0.32 0.26 ANG. 10.7 11.9 13.2 20.5 25.7 27.5 29.4 40.1 0.43 0.43 0.43 0.41 0.38 0.38 0.37 0.32 8 Preliminary Data Sheet P13864EJ1V0DS00 2SC5507 PACKAGE DRAWINGS Flat-lead 4-pin thin super mini-mold (unit: mm) 0.40 +0.1 -0.05 2.05 0.1 1.25 0.1 2 3 0.65 4 0.65 0.60 T78 2.0 0.1 1.25 0.65 0.59 0.05 0.30 +0.1 -0.05 (LEADS1,3,4) 1 Pin connections 1. Emitter 2. Collector 3. Emitter 4. Base 0.11 +0.1 -0.05 1.30 Preliminary Data Sheet P13864EJ1V0DS00 9 2SC5507 SOLDERING CONDITIONS Solder this product under the following recommended conditions. For soldering methods and conditions other than those recommended, consult NEC. Soldering Method(s) Infrared reflow Soldering Conditions Package peak temperature: 235 C, Time: 30 sec max. (210 C min.), Note Number of times: twice max., Maximum number of days: None Package peak temperature: 215 C, Time: 40 sec max. (200 C min.), Note Number of times: twice max., Maximum number of days: None Solder bath temperature: 260 C, Time: 10 sec max., Number of Note times: once, Maximum number of days: None Recommended Conditions Symbol IR35-00-2 VPS VP15-00-2 Wave soldering WS60-00-1 Note Number of days in storage after the dry pack has been opened. The storage conditions are at 25 C, 65% RH MAX. Caution Do not use two or more soldering methods in combination. For details of the recommended soldering conditions, refer to information document Semiconductor Device Mounting Technology Manual (C10535E). 10 Preliminary Data Sheet P13864EJ1V0DS00 2SC5507 [MEMO] Preliminary Data Sheet P13864EJ1V0DS00 11 2SC5507 No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. M4 96. 5 |
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