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| SHINDENGEN Switching Power Transistor HFX Series 2SC4234 (TP3V80HFX) 3A NPN OUTLINE DIMENSIONS Case : ITO-220 Unit : mm RATINGS *oeAbsolute Maximum Ratings Item Symbol Conditions Ratings Unit Storage Temperature Tstg -55*150 *Z Junction TemperatureTj 150 *Z Collector to Base Voltage V 1200 V CBO Collector to Emitter Voltage V 800 V CEO Emitter to Base Voltage V 7 V EBO Collector Current DC I 3 A C Collector Current Peak I 6 CP Base Current DC I 1 A B Base Current Peak I 2 BP Total Transistor DissipationTc = 25*Z P 45 W T Dielectric Strength Vdis Terminals to cased, AC 2 minute 1 kV Mounting Torque TOR (Recommended torque 0.5 Nm : 0.3Nm) *oeElectrical Characteristics (Tc=25*Z) Item Symbol Conditions Ratings Unit Collector to Emitter Sustaining0.1A V (sus)I = Voltage Min 800 V C CEO Collector Cutoff Current At rated Voltage I Max 0.1 A m CBO I Max 0.1 CEO Emitter Cutoff Current I Max 0.1 A m EBO At rated Voltage DC Current Gain h V = 5V, I = 1.5A Min 8 FE CE C h = Min 7 CE C 1mA FEL V = 5V, I Collector to Emitter Saturation1.5A V (sat) I = Voltage Max 1.0 V CE C Base to Emitter Saturation Voltage V (sat) I = 0.3A Max 1.5 V B BE Thermal Resistance AEjc Junction to case Max 2.77 *Z/W Transition Frequency fT V = 10V, 0.3A = TYP 8 MHz CE C I Turn on Time ton I = 1.5A Max 0.5 C Storage Time = ts I = 0.3A,0.6A Max 3.5Es B1 B2 I Fall Time tf R= 170, 4V = Max 0.3 L BB2V Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd 2SC4234 hFE - I C VCE = 5V 100 Tc = 150C 100C 50C 25C 10 0C -25C DC Current Gain hFE -55C 1 0.001 0.01 0.1 1 6 Collector Current IC [A] 2SC4234 Saturation Voltage 3 0.75A 1.5A 3.0A 4.5A 2.5 3 IC = 0.3A 2.5 2 2 1.5 4.5A 3.0A 1.5 1 0.75A 1.5A Collector-Emitter Voltage VCE [V] 0.5 IC = 0.3A 0.5 Tc = 25C 0 0.1 1 2 0 0.01 Base Current IB [A] Base-Emitter Voltage VBE [V] 1 2SC4234 10 Switching Time - IC ts 1 Switching Time tSW [s] ton 0.1 tf IB1 = 0.2IC IB2 = 0.4IC VBB2 = 4V VCC = 250V Tc = 25C 0.01 0 0.5 1 1.5 2 2.5 3 Collector Current IC [A] 2SC4234 10 Switching Time - VCC ts 1 ton Switching Time tSW [s] tf 0.1 IC = 1.5A IB1 = 0.3A IB2 = 0.6A VBB2 = 4V Tc = 25C 0.01 0 50 100 150 200 250 300 Collector Voltage VCC [V] 2SC4234 10 Switching Time - Tc ts 1 Switching Time tSW [s] ton tf 0.1 IC = 1.5A IB1 = 0.3A IB2 = 0.6A VBB2 = 4V R L = 167 0.01 0 50 100 150 Case Temperature Tc [C] 2SC4234 10 L-Load Switching Time - IC ts 1 Switching Time tSW [s] tf + tvs 0.1 tf IB1 = 0.2IC IB2 = 0.4IC VBB2 = 4V VCE (clamp) = 300V Tc = 25C 0.01 0 0.5 1 1.5 2 2.5 3 Collector Current IC [A] 2SC4234 10 L-Load Switching Time - IC (At High Temperature) ts 1 Switching Time tSW [s] tf + tvs 0.1 tf IB1 = 0.2IC IB2 = 0.4IC VBB2 = 4V VCE (clamp) = 300V Tc = 100C 0.01 0 0.5 1 1.5 2 2.5 3 Collector Current IC [A] 2SC4234 Transient Thermal Impedance 10 1 0.1 Transient Thermal Impedance jc(t) [C/W] 0.01 0.001 10-3 10-2 10-4 10-1 100 101 Time t [s] 2SC4234 6 10ms Forward Bias SOA 1ms 150s 50s DC PT limit 1 Collector Current IC [A] IS/B limit 0.1 Tc = 25C Single Pulse 0.01 1 10 100 800 Collector-Emitter Voltage VCE [V] 2SC4234 100 Collector Current Derating Collector Current Derating [%] 80 IS/B limit 60 40 PT limit 20 VCE = fixed 0 0 50 100 150 Case Temperature Tc [C] 2SC4234 6 IB1 = 0.25IC IB2 = 0.45A VBB2 = 5V Tc < 150C Reverse Bias SOA 5 4 Collector Current IC [A] 3 2 1 0 0 200 400 600 800 1000 1200 Collector-Emitter Voltage VCE [V] |
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