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| SHINDENGEN Switching Power Transistor HFX Series 2SC4230 (T2V80HFX) 2A NPN OUTLINE DIMENSIONS Case : TO-220 Unit : mm RATINGS *oeAbsolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current DC Collector Current Peak Base Current DC Base Current Peak Total Transistor Dissipation Mounting Torque Symbol Tstg Tj VCBO V CEO V EBO IC I CP IB IBP PT TOR Conditions Ratings -55*150 150 1200 800 7 2 4 1 2 50 0.5 Unit *Z *Z V V V A A W Nm Tc = 25*Z (Recommended torque : 0.3Nm) *oeElectrical Characteristics (Tc=25*Z) Item Symbol Collector to Emitter Sustaining Voltage VCEO (sus) Collector Cutoff Current I CBO I CEO Emitter Cutoff Current IEBO DC Current Gain h FE h FEL Collector to Emitter Saturation Voltage V CE (sat) Base to Emitter Saturation Voltage VBE (sat) Thermal Resistance AEjc Transition Frequency fT Turn on Time ton Storage Time ts Fall Time tf Conditions IC = 0.1A At rated Voltage At rated Voltage VCE 5V, I = 1A = C VCE 5V, I = 1mA = C IC = 1A IB = 0.2A Junction to case VCE 10V, I = 0.2A = C IC = 1A IB1= 0.2A, I = 0.4A B2 RL = 250, V = 4V BB2 Ratings Min 800 Max 0.1 Max 0.1 Max 0.1 Min 8 Min 7 Max 1.0 Max 1.5 Max 2.5 TYP 8 Max 0.5 Max 3.5 Max 0.3 Unit V mA mA V V *Z/W MHz Es 2SC4230 hFE - I C VCE = 5V 100 Tc = 150C 100C 50C 25C 10 0C -25C DC Current Gain hFE -55C 1 0.001 0.01 0.1 1 4 Collector Current IC [A] 2SC4230 Saturation Voltage 3 0.5A 1A 2A 4A 2.5 3 IC = 0.25A 2.5 2 2 1.5 4A 0.5A 1A 2A 1.5 Collector-Emitter Voltage VCE [V] IC = 0.25A 0.5 0.5 Tc = 25C 0 0.1 1 2 0 0.01 Base Current IB [A] Base-Emitter Voltage VBE [V] 1 1 2SC4230 10 Switching Time - IC ts 1 Switching Time tSW [s] ton 0.1 tf IB1 = 0.2IC IB2 = 0.4IC VBB2 = 4V VCC = 250V Tc = 25C 0.01 0 0.5 1 1.5 2 Collector Current IC [A] 2SC4230 10 Switching Time - VCC ts 1 Switching Time tSW [s] ton tf 0.1 IC = 1A IB1 = 0.2A IB2 = 0.4A VBB2 = 4V Tc = 25C 0.01 0 50 100 150 200 250 300 Collector Voltage VCC [V] 2SC4230 10 Switching Time - Tc ts 1 Switching Time tSW [s] ton tf 0.1 IC = 1A IB1 = 0.2A IB2 = 0.4A VBB2 = 4V R L = 250 0.01 0 50 100 150 Case Temperature Tc [C] 2SC4230 10 L-Load Switching Time - IC ts 1 Switching Time tSW [s] tf + tvs 0.1 tf IB1 = 0.2IC IB2 = 0.4IC VBB2 = 4V VCE (clamp) = 300V Tc = 25C 0.01 0 0.5 1 1.5 2 Collector Current IC [A] 2SC4230 10 L-Load Switching Time - IC (At High Temperature) ts 1 Switching Time tSW [s] tf + tvs tf 0.1 IB1 = 0.2IC IB2 = 0.4IC VBB2 = 4V VCE (clamp) = 300V Tc = 100C 0.01 0 0.5 1 1.5 2 Collector Current IC [A] 2SC4230 Transient Thermal Impedance 10 1 0.1 Transient Thermal Impedance jc(t) [C/W] 0.01 0.001 10-3 10-2 10-4 10-1 100 101 Time t [s] 2SC4230 4 10ms Forward Bias SOA 1ms 150s 50s DC 1 PT limit Collector Current IC [A] IS/B limit 0.1 Tc = 25C Single Pulse 0.01 1 10 100 800 Collector-Emitter Voltage VCE [V] 2SC4230 100 Collector Current Derating Collector Current Derating [%] 80 IS/B limit 60 40 PT limit 20 VCE = fixed 0 0 50 100 150 Case Temperature Tc [C] 2SC4230 4 Reverse Bias SOA 3.5 3 Collector Current IC [A] 2.5 2 1.5 1 IB1 = 0.25IC IB2 = 0.3A VBB2 = 5V Tc < 150C 0.5 0 0 200 400 600 800 1000 1200 Collector-Emitter Voltage VCE [V] |
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