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| Phototransistors PNZ109F Silicon NPN Phototransistor Unit : mm For optical control systems Features Flat window design which is suited to optical systems Built-in filter to cutoff visible light for reducing ambient light noise Peak sensitivity wavelength matched with infrared light emitting devices : p = 900 nm (typ.) Fast response : tr = 8 s (typ.) Long lifetime, high reliability 4.50.2 o4.60.15 Glass window 12.7 min. 3-o0.450.05 2.540.25 0 1. .2 0 0 0. 15 45 3 1. Absolute Maximum Ratings (Ta = 25C) Parameter Collector to emitter voltage Collector to base voltage Emitter to collector voltage Emitter to base voltage Collector current Collector power dissipation Operating ambient temperature Storage temperature Symbol VCEO VCBO VECO VEBO IC PC Topr Tstg Ratings 20 30 3 5 30 150 -25 to +85 -30 to +100 Unit V V V V mA mW C C 3 21 1: Emitter 2: Base 3: Collector o5.75 max. Electro-Optical Characteristics (Ta = 25C) Parameter Dark current Collector photo current Peak sensitivity wave length Acceptance half angle Rise time Fall time Collector saturation voltage *1 *2 Symbol ICEO ICE(L) P tr*2 tf*2 VCE(sat) VCE = 10V Conditions VCE = 10V, L = 100 VCE = 10V Measured from the optical axis to the half power point VCC = 10V, ICE(L) = 1mA RL = 100 ICE(L) = 1mA, L = 1000 lx*1 lx*1 min 0.3 typ 0.05 900 40 8 9 0.3 max 2 Unit A mA nm deg. s s 0.6 V Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source. Switching time measurement circuit Sig.IN VCC (Input pulse) Sig.OUT (Output pulse) 90% 10% td tr tf td : Delay time tr : Rise time (Time required for the collector photo current to increase from 10% to 90% of its final value) tf : Fall time (Time required for the collector photo current to decrease from 90% to 10% of its initial value) ,,, , ,, 50 RL 1 Phototransistors PNZ109F PC -- Ta 200 12 ICE(L) -- VCE ICE(L) (mA) ICE(L) (mA) Ta = 25C T = 2856K 10 L = 1000 lx 8 900 lx 800 lx 700 lx 600 lx 500 lx 400 lx 4 300 lx 200 lx 2 100 lx 50 lx 10 lx 20 24 10 3 ICE(L) -- L VCE = 10V Ta = 25C T = 2856K PC (mW) 160 10 2 Collector power dissipation Collector photo current 6 80 Collector photo current 120 10 1 40 10 -1 0 - 20 0 20 40 60 80 100 0 0 4 8 12 16 10 -2 1 10 10 2 10 3 10 4 Ambient temperature Ta (C ) Collector to emitter voltage VCE (V) Illuminance L (lx) ICEO -- Ta 10 2 VCE = 10V 10 ICE(L) -- Ta ICE(L) (mA) VCE = 10V L = 100 lx T = 2856K 100 Spectral sensitivity characteristics VCE = 10V Ta = 25C 10 ICEO (A) Collector photo current Dark current 1 10 -1 Relative sensitivity 1 S (%) 10 -1 - 40 80 60 40 10 -2 20 10 -3 - 20 0 20 40 60 80 100 0 40 80 120 0 600 700 800 900 1000 1100 1200 Ambient temperature Ta (C ) Ambient temperature Ta (C ) Wavelength (nm) Directivity characteristics 0 100 10 20 10 4 tr -- ICE(L) VCC = 10V Ta = 25C 10 4 tf -- ICE(L) VCC = 10V Ta = 25C 80 70 60 50 40 30 20 Relative sensitivity S (%) 90 30 10 3 10 3 tr (s) 40 50 60 70 80 90 10 2 RL = 1k 10 500 100 1 tf (s) 10 2 RL = 1k 10 500 100 1 Rise time 10 -1 10 -2 Fall time 10 2 10 -1 1 10 10 -1 10 -2 10 -1 1 10 10 2 Collector photo current ICE(L) (mA) Collector photo current ICE(L) (mA) 2 |
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