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FMG2G300LS60E
IGBT
FMG2G300LS60E
Molding Type Module
General Description
Fairchild IGBT Power Module provides low conduction as well as short circuit ruggedness. It's designed for the applications such as welder.
Features
* * * * * Short Circuit Rated Time; 10us @ TC =100C, VGE = 15V Low Saturation Voltage: VCE(sat) = 1.4 V @ IC = 300A High Input Impedance Fast & Soft Anti-Parallel FWD UL Certified No.E209204 Package Code : 7PM-HA
Application
* AC/ DC Welder
E1/C2
C1
E2
G1
E1
G2
E2
Internal Circuit Diagram
Absolute Maximum Ratings
Symbol VCES VGES IC ICM (1) IF IFM PD TSC TJ TSTG VISO Mounting Torque
TC = 25C unless otherwise noted
Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Pulsed Collector Current Diode Continuous Forward Current Diode Maximum Forward Current Maximum Power Dissipation Short Circuit Withstand Time Operating Junction Temperature Storage Temperature Range Isolation Voltage Power Terminal Screw : M5 Mounting Screw : M6
@ TC = 100C
FMG2G300LS60E 600 20 300 600 300 600 892 10 -40 to +150 -40 to +125 2500 4.0 4.0
Units V V A A A A W us C C V N.m N.m
@ AC 1minute
Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature
(c)2004 Fairchild Semiconductor Corporation
FMG2G300LS60E Rev. A
FMG2G300LS60E
Electrical Characteristics of IGBT
Symbol Parameter
TC = 25C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BVCES BVCES/ TJ ICES IGES Collector-Emitter Breakdown Voltage Temperature Coeff. of Breakdown Voltage Collector Cut-Off Current Gate - Emitter Leakage Current VGE = 0V, IC = 250uA VGE = 0V, IC = 1mA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V 600 ----0.6 ----250 100 V V/C uA nA
On Characteristics
VGE(th) VCE(sat) Gate - Emitter Threshold Voltage Collector to Emitter Saturation Voltage IC = 300mA, VCE = VGE IC = 300A, VGE = 15V 5.0 -6.5 1.4 8.5 1.8 V V
Switching Characteristics
td(on) tr td(off) tf Eon Eoff td(on) tr td(off) tf Eon Eoff Tsc Qg Qge Qgc Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Short Circuit Withstand Time Total Gate Charge Gate-Emitter Charge Gate-Collector Charge VCC = 300 V, IC = 300A, RG = 10, VGE = 15V, Inductive Load, TC = 25C ------------10 ---0.23 0.21 0.43 2.43 13 180 0.3 0.23 0.46 4.1 15 260 -990 210 350 ----------------us us us us mJ mJ us us us us mJ mJ us nC nC nC
VCC = 300 V, IC = 300A, RG = 10, VGE = 15V, Inductive Load, TC = 125C VCC = 300 V, VGE = 15V 100C
@ TC =
VCE = 300 V, IC =300A, VGE = 15V
Electrical Characteristics of DIODE
Symbol VFM trr Irr Qrr Parameter Diode Forward Voltage Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge
TC = 25C unless otherwise noted
Test Conditions TC = 25C IF = 300A TC = 100C TC = 25C TC = 100C IF = 300A di / dt = 600 A/us TC = 25C TC = 100C TC = 25C TC = 100C
Min. ---------
Typ. 1.9 1.8 90 130 32 63 1440 4095
Max. 2.8 -130 -42 -2700 --
Units V ns A nC
Thermal Characteristics
Symbol RJC RJC RJC Weight Parameter Junction-to-Case (IGBT Part, per 1/2 Module) Junction-to-Case (DIODE Part, per 1/2 Module) Case-to-Sink (Conductive grease applied) Weight of Module Typ. --0.035 240 Max. 0.14 0.22 --Units C/W C/W C/W g
(c)2004 Fairchild Semiconductor Corporation
FMG2G300LS60E Rev. A
FMG2G300LS60E
400
Common Emitter VGE = 15V TC = 25 TC = 125 ------
7 6 5 4 T o ff 3 2 1 Tf
Common Emitter VCC = 300V, VGE = 15V Rg = 10 TC = 25 TC = 125 ------
[A]
300
200
100
0 0.0 0.4 0.8 1.2 1.6
CE
S w it c h i n g T i m e [ u s ]
C o ll e c t o r C u r r e n t , I
C
2.0
2.4
200
250
300
C
350
400
C o ll e c t o r - E m it t e r V o lt a g e , V
[V]
C o ll e c t o r C u r r e n t , I [ A ]
Fig 1. Typical Output Characteristics
Fig 2. Turn-Off Characteristics vs. Collector Current
0.9 0.8 0.7
Common Emitter VCC = 300V, VGE = 15V Rg = 10 TC = 25 TC = 125 -----Common Emitter VCC = 300V, VGE = 15V Rg = 10 TC = 25 TC = 125 ------
1000
S w it c h i n g L o s s [ m J ]
S w it c h i n g T i m e [ u s ]
E o ff
0.6 0.5 0.4 0.3 0.2 0.1
Ton
100
Tr
Eon 10
200
250
300
C
350
400
200
250
300
C
350
400
C o ll e c t o r C u r r e n t , I [ A ]
C o ll e c t o r C u r r e n t , I [ A ]
Fig 3. Turn-On Characteristics vs. Collector Current
Fig 4. Switching Loss vs. Collector Current
8 7
Common Emitter VCC = 300V, VGE = 15V Ic = 300A TC = 25 TC = 125 ------
1.6 1.4 1.2
Common Emitter VCC = 300V, VGE = 15V Ic = 300A TC = 25 TC = 125 ------
S w it c h i n g T i m e [ u s ]
S w it c h i n g T i m e [ u s ]
6 5 4 3 2 1
1.0 0.8 0.6 0.4 0.2 0.0
Ton
T o ff
Tf
Tr
10
20
30
G
40
50
10
20
30
G
40
50
G ate R e sista n c e, R
[
]
G ate R e sista n c e, R
[
]
Fig 5. Turn-Off Characteristics vs. Gate Resistance
(c)2004 Fairchild Semiconductor Corporation
Fig 6. Turn-On Characteristics vs. Gate Resistance
FMG2G300LS60E Rev. A
FMG2G300LS60E
15
Common Emitter VCC = 300V, VGE = 15V Ic = 300A TC = 25 TC = 125 ------
1000
12
Common Emitter IC = 300A VCC = 300V TC = 25 C
o
S w it c h i n g L o s s [ m J ]
G a t e - E m itt e r V o lt a g e , V
GE
[V]
E o ff 100
9
6
Eon 10
3
0
10 20 30
G
40
50
0
200
400
600
g
800
1000
G ate R e sista n c e, R
[
]
G ate C h arg e, Q
[nC]
Fig 7. Switching Loss vs. Gate Resistance
Fig 8. Gate Charge Characteristics
[A]
300
Common Cathode VGE = 0V TC = 25 TC = 125
P e a k R e v e rs e R e c o v e ry C u rr e n t, I [A] rr [x10ns] R e vers e R e c o v ery Ti m e, T
400
200
Common Cathode di/dt = 600A/ T C = 25 T C = 100
100
C u rr e n t, I
F
rr
200
Irr
F orw ard
100
10
trr
0 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8
5 0 50 100 150 200 250 300
F orw ard
V o lt a g e ,
V
F
[V]
F orw ard
C u rr e n t,
I
F
[A]
Fig 9. Forward Characteristics (diode)
Fig 10. Reverse Recovery Characteristics(diode)
(c)2004 Fairchild Semiconductor Corporation
FMG2G300LS60E Rev. A
FMG2G300LS60E
Package Dimension
7PM-HA
40.0 0.50 23.0 0.50 23.0 0.50 2- O6.5 0.30
Mounting-Hole
G2 E2
13.0 0.60
18.0 0.60 26.0 0.60
E1 G1
3-M5 80.0 0.50 94.0 0.50
3-10.0 0.50
5.95 0.60
8.00 0.50
3-16.0 0.50
2.80 -0.50 *0.5t
O1.3
+0.00
48.0 0.60 28.0 0.50 45.5 0.50
30.0 -0.60
+0.20
Name Plate
(c)2004 Fairchild Semiconductor Corporation
22.0 -0.60
+0.20
FMG2G300LS60E Rev. A
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM
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SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UltraFET(R) VCXTM
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness. provided in the labeling, can be reasonably expected to result in significant injury to the user.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
(c)2004 Fairchild Semiconductor Corporation
Rev. I11

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