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| 2SK2646-01 FAP-IIS Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = 30V Guarantee Repetitive Avalanche Rated N-channel MOS-FET 800V 4 4A 80W > Outline Drawing > Applications Switching Regulators UPS DC-DC converters General Purpose Power Amplifier > Maximum Ratings and Characteristics - Absolute Maximum Ratings ( T C=25C) unless otherwise specified , > Equivalent Circuit Rating 800 4 16 30 4 254 80 150 -55 ~ +150 Unit V A A V A mJ W C C Item Drain-Source-Voltage Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Repetitive or Non-Repetitive (Tch 150C) Avalanche Energy Max. Power Dissipation Operating and Storage Temperature Range Symbol V DS ID I D(puls) V GS I AR E AS PD T ch T stg - Electrical Characteristics (TC=25C), Item Drain-Source Breakdown-Voltage Gate Threshhold Voltage Zero Gate Voltage Drain Current Gate Source Leakage Current Drain Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On-Time ton (ton=td(on)+tr) Turn-Off-Time toff (ton=td(off)+tf) Avalanche Capability Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge - Thermal Characteristics Item Thermal Resistance unless otherwise specified Symbol V (BR)DSS V GS(th) I DSS I R g C C C t t t t I V t Q GSS DS(on) fs iss oss rss d(on) r d(off) f AV SD rr rr Test conditions ID=1mA VGS =0V ID=1mA VDS= VGS VDS=800V Tch =25C VGS=0V Tch=125C VGS =30V VDS=0V ID=2A VGS =10V ID=2A VDS=25V VDS=25V VGS =0V f=1MHz VCC=600V ID=2A VGS=10V RGS=10 Tch =25C L = 100H IF=2xI DR VGS =0V T ch =25C IF=IDR V GS =0V -dI F/dt=100A/s T ch =25C Min. 800 3,5 Typ. 4,0 10 0,2 10 3,19 2 450 75 40 20 40 50 25 1,0 450 3,0 Max. 4,5 500 1,0 100 4,0 4 Unit V V A mA nA S pF pF pF ns ns ns ns A V ns C Symbol R th(ch-a) R th(ch-c) Test conditions channel to air channel to case Min. Typ. Max. 75 1,56 Unit C/W C/W Collmer Semiconductor - P.O. Box 702708 - Dallas TX - 75370 - 972.233.1589 - 972.233.0481 Fax - www.collmer.com - 11/98 N-channel MOS-FET 800V 4 2SK2646-01 FAP-IIS Series Drain-Source-On-State Resistance vs. Tch RDS(on) = f(Tch): ID=2A; VGS=10V 4A 80W > Characteristics Typical Output Characteristics ID=f(VDS); 80s pulse test; TC=25C Typical Transfer Characteristics ID=f(VGS); 80s pulse test; VDS=25V; Tch=25C ID [A] RDS(ON) [] 2 ID [A] 1 3 VDS [V] Tch [C] VGS [V] Typical Drain-Source-On-State-Resistance vs. ID RDS(on)=f(ID); 80s pulse test;TC=25C Typical Forward Transconductance vs. ID gfs=f(ID); 80s pulse test; VDS=25V; Tch=25C Gate Threshold Voltage vs. Tch VGS(th)=f(Tch); ID=1mA; VDS=VGS RDS(ON) [] gfs [S] 5 VGS(th) [V] 4 6 ID [A] ID [A] Tch [C] Typical Capacitances vs. VDS C=f(VDS); VGS=0V; f=1MHz Avalanche Energy Derating Eas=f(starting Tch); Vcc=80V; IAV=4A Forward Characteristics of Reverse Diode IF=f(VSD); 80s pulse test; VGS=0V C [F] 7 EAS [mJ] VGS [V] IF [A] 8 9 VDS [V] Starting Tch [C] VSD [V] Power Dissipation PD=F(TC) Safe operation area ID=f(VDS): D=0,01, Tc=25C Zth(ch-c) [K/W] Transient Thermal impedance Zthch=f(t) parameter:D=t/T PD [W] 10 ID [A] 12 TC [C] VDS [V] t [s] This specification is subject to change without notice! |
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