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| PC3H41X NIP Series/PC3Q410 NIP PC3H41X NIP Series PC3Q410 NIP s Features 1. Low input current type (IF=0.5mA) 2. High resistance to noise due to high common rejection voltage (CMR:MIN. 10kV/s) 3. AC input type 4. Mini-flat package PC3H41X NIP Series (1ch) PC3Q410 NIP (4ch) 5. Isolation voltage (Viso:2.5kVrms) 6. Recognized by UL, file No. E64380 AC Input, Low Input Current Type Photocoupler s Outline Dimensions PC3H41XNIP Series Anode mark 1.270.25 1 4 4 (Unit : mm) Internal connection diagram 3 1 2 H41 4.40.2 0.40.1 2 3 3 4 1 2 Anode (Cathode) Cathode (Anode) Emitter Collector 2.60.3 5.30.3 0.20.05 0.10.1 2.00.2 Epoxy resin s Applications 1. Programmable controllers 2. Facsimiles 3. Telephones +0.2 7.0-0.7 +0.4 0.5-0.2 s Rank Table Model No. Rank mark PC3H410NIP A or no mark A PC3H411NIP Model No. PC3Q410NIP Rank mark No mark Ic (mA) 0.25 to 2.0 0.5 to 1.5 Ic (mA) 0.25 to 2.0 Conditions IF=0.5mA VCE=5V Ta=25C PC3Q410NIP 10.30.3 1.270.25 16 9 Internal connection diagram 16 15 14 13 12 11 10 9 IF=0.5mA VCE=5V Ta=25C PC3Q41 4.40.2 Conditions 1 23 45 67 8 1357 2468 s Absolute Maximum Ratings (Ta=25C) Unit mA mA mW V V mA mW mW C C kVrms C 1 8 0.40.1 9 11 13 15 10 12 14 16 Parameter Symbol Rating IF 10 Forward current Input *1 Peak forward current 200 IFM Power dissipation P 15 Collector-emitter voltage VCEO 70 Emitter-collector voltage VECO 6 Output IC 50 Collector current PC 150 Collector power dissipation 170 Total power dissipation Ptot Operating temperature -30 to +100 Topr -40 to +125 Tstg Storage temperature *2 Viso Isolation voltage 2.5 *3 260 Soldering temperature Tsol *1 Pulse width<=100s, Duty ratio=0.001 *2 40 to 60%RH, AC for 1 minute, f=60Hz *3 For 10s Primary side mark 2.60.2 C0.4 (Input side) 0.20.05 Anode (Cathode) Cathode (Anode) Emitter Collector Epoxy resin 5.30.3 0.10.1 6 +0.4 0.5-0.2 +0.2 7.0-0.7 0.2mm or more Soldering area Notice In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device. Internet Internet address for Electronic Components Group http://www.sharp.co.jp/ecg/ PC3H41X NIP Series/PC3Q410 NIP s Electro-optical Characteristics Parameter Symbol Forward voltage VF Terminal capacitance Ct Collector dark current ICEO Collector-emitter breakdown voltage BVCEO Emitter-collector breakdown voltage BVECO IC Collector current Collector-emitter saturation voltage VCE (sat) Isolation resistance RISO Cf Floating capacitance tr Rise time Response time tf Fall time *1 (Ta=25C) Conditions IF=10mA V=0, f=1kHz VCE=50V, IF=0 IC=0.1mA, IF=0 IE=10A, IF=0 IF=0.5mA, VCE=5V IF=10mA, IC=1mA DC500V 40 to 60%RH V=0, f=1MHz VCE=2V, IC=2mA, RL=100 MIN. - - - 70 6 0.25 - 5x1010 - - - 10 TYP. 1.2 30 - - - - - 1011 0.6 4 3 - MAX. 1.4 250 100 - - 2.0 0.2 - 1.0 18 18 - Unit V pF nA V V mA V pF s s kV/s Transfer characteristics Output Input Common mode rejection voltage CMR Ta=25C, RL=470, VCM=1.5kV (peak), IF=0mA, VCC=9V, Vnp=100mV *1 Refer to Fig.1. Fig.1 Test Circuit for Common Mode Rejection Voltage (dV/dt) VCM RL Vnp VCC VCM : High wave pulse RL=470 VCC=9V VO 1) Vcp Vnp VCM (Vcp Nearly = dV/dtxCfxRL) 1) Vcp : Voltage which is generated by displacement current in floating capacitance between primary and secondary side. Fig.2 Forward Current vs. Ambient Temperature Fig.3 Diode Power Dissipation vs. Ambient Temperature 10 Diode power dissipation P (mW) 15 Forward current IF (mA) 10 5 5 0 -30 0 25 50 75 100 125 0 -30 0 25 50 75 100 125 Ambient temperature Ta (C) Ambient temperature Ta (C) PC3H41X NIP Series/PC3Q410 NIP Fig.4 Collector Power Dissipation vs. Ambient Temperature Collector power dissipation PC (mW) Fig.5 Total Power Dissipation vs. Ambient Temperature 200 Total power dissipation Ptot (mW) 200 170 150 150 100 100 50 50 0 -30 0 25 50 75 100 125 0 -30 0 25 50 75 100 125 Ambient temperature Ta (C) Ambient temperature Ta (C) Fig.6 Peak Forward Current vs. Duty Ratio 2000 Peak forward current IFM (mA) 1000 500 Pulse width <=100s Ta=25C Fig.7 Forward Current vs. Forward Voltage 100 Forward current IF (mA) 10 Ta=25C Ta=100C 1 Ta=75C Ta=50C Ta=0C Ta=-25C 200 100 50 20 10 5 10 -3 2 5 10 -2 2 5 10 -1 0.1 2 5 1 0 0.5 1.0 1.5 2.0 Duty ratio Forward voltage VF (V) Fig.8 Current Transfer Ratio vs. Forward Current 600 PC3H41XNIP Series VCE=5V Ta=25C Fig.9 Current Transfer Ratio vs. Forward Current 500 PC3Q410NIP VCE=5V Ta=25C Current transfer ratio CTR (%) 400 500 Current transfer ratio CTR (%) 400 300 300 200 200 100 0 0.1 100 1 Forward current IF (mA) 10 0 0.1 1 Forward current IF (mA) 10 PC3H41X NIP Series/PC3Q410 NIP Fig.10 Collector Current vs. Collector-emitter Voltage PC3H41XNIP Series 40 Ta=25C PC (MAX.) Collector current IC (mA) IF=7mA 20 IF=5mA Collector current IC (mA) 30 30 IF=7mA 20 IF=5mA IF=3mA 10 IF=1mA 0 0 2 4 6 8 10 0 2 4 6 8 10 Collector-emitter voltage VCE (V) Collector-emitter voltage VCE (V) IF=2mA IF=0.5mA PC (MAX.) Fig.11 Collector Current vs. Collector-emitter Voltage PC3Q410NIP 40 Ta=25C IF=3mA IF=2mA IF=1mA IF=0.5mA 10 0 Fig.12 Relative Current Transfer Ratio vs. Ambient Temperature 150 PC3H41XNIP Series VCE=5V IF=0.5mA 100 Fig.13 Relative Current Transfer Ratio vs. Ambient Temperature 150 PC3Q410NIP VCE=5V IF=0.5mA 100 Relative current transfer ratio (%) 50 Relative current transfer ratio (%) 50 0 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 Ambient temperature Ta (C) 0 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 Ambient temperature Ta (C) Fig.14 Collector - emitter Saturation Voltage vs. Ambient Temperature Collector-emitter saturation voltage VCE (sat) (V) 0.16 0.14 0.12 0.10 0.08 0.06 0.04 0.02 0 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 Ambient temperature Ta (C) IF=10mA IC=1mA Fig.15 Collector Dark Current vs. Ambient Temperature 10-5 -6 VCE=50V Collector dark current ICEO (A) 10 10-7 10-8 10-9 10-10 10-11 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 Ambient temperature Ta (C) PC3H41X NIP Series/PC3Q410 NIP Fig.16 Response Time vs. Load Resistance 1000 VCE=2V IC=2mA Ta=25C 100 Response time (s) tf Response time (s) td Fig.17 Response Time vs. Load Resistance (Saturation) 1000 VCC=5V IF=16mA Ta=25C 100 ts 10 tf 10 tr 1 ts 1 td tr 0.1 0.1 1 Load resistance RL (k) 10 0.1 1 10 Load resistance RL (k) 100 Fig.18 Test Circuit for Response Time VCC RD Input RL Output Input Output Fig.19 Voltage Gain vs Frequency 5 VCE=2V IC=2mA Ta=25C 0 Voltage gain AV (dB) -5 -10 RL=10k 10% 90% 1k 100 -15 -20 -25 0.1 td tr ts tf 1 10 Frequency f (kHz) 100 1000 Fig.20 Collector-emitter Saturation Voltage vs. Forward Current Collector-emitter saturation voltage VCE (sat) (V) 5 IC=7mA 4 IC=5mA IC=3mA IC=2mA 3 IC=1mA IC=0.5mA 2 Ta=25C Fig.21 Reflow Soldering Only one time soldering is recommended within the temperature profile shown below. 230C 200C 180C 1 25C 30s 0 0 2 4 6 8 10 2min Forward current IF (mA) 1min 1.5min 1min |
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