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| SEMICONDUCTOR TECHNICAL DATA LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT A KTA1385D/L EPITAXIAL PLANAR PNP TRANSISTOR I J FEATURES High Power Dissipation : PC=1.3W(Ta=25 ) Complementary to KTC5103D/L Q C H P F F 2 3 L MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range * PW 10ms, Duty Cycle 50% Ta=25 Tc=25 DC Pulse * ) SYMBOL VCBO VCEO VEBO IC ICP IB PC Tj Tstg RATING -60 -60 -7 -5 -8 -1 1.0 15 150 -55 150 UNIT V V V 1 DIM A B C D E F H I J K L M O P Q MILLIMETERS _ 6.60 + 0.2 _ 6.10 + 0.2 _ 5.0 + 0.2 _ 1.10 + 0.2 _ 2.70 + 0.2 _ 2.30 + 0.1 1.00 MAX _ 2.30 + 0.2 _ 0.5 + 0.1 _ 2.00 + 0.20 _ 0.50 + 0.10 _ 0.91+ 0.10 _ 0.90 + 0.1 _ 1.00 + 0.10 0.95 MAX B K E M D 1. BASE 2. COLLECTOR 3. EMITTER DPAK A A W A C I J B D O H G P F F L 1 2 3 DIM A B C D E F G H I J K L P Q MILLIMETERS _ 6.60 + 0.2 _ 6.10 + 0.2 _ 0.2 5.0 + _ 1.10 + 0.2 _ 9.50 + 0.6 _ 2.30 + 0.1 _ 0.76 + 0.1 1.0 MAX _ 2.30 + 0.2 _ 0.5 + 0.1 _ 0.2 2.0 + _ 0.50 + 0.1 _ 1.0 + 0.1 0.90 MAX Q K 1. BASE 2. COLLECTOR 3. EMITTER E ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current DC Current Gain * SYMBOL ICBO IEBO hFE 1 hFE2 (Note) hFE 3 Collector-Emitter Saturation Voltage * Base-Emitter Saturation Voltage Turn On Time Switching Time Storage Time Fall Time * Pulse test : PW 350 S, * VCE(sat) VBE(sat) ton 0 IPAK TEST CONDITION VCB=-50V, IE=0 VEB=-7V, IC=0 VCE=-1V, IC=-0.1A VCE=-1V, IC=-2A VCE=-2V, IC=-5A IC=-2A, IB=-0.2A IC=-2A, IB=-0.2A OUTPUT I B2 INPUT I B1 5 I B2 20sec -IB1 =IB2=0.2A DUTY CYCLE < 1% = MIN. 60 160 50 - TYP. -0.14 -0.9 0.15 0.78 0.18 MAX. -10 -10 400 -0.3 -1.2 1 2.5 1 UNIT A A V V tstg tf IB1 S VCC =-10V Duty Cycle 2% Pulse O:160 320, Y:200 400. Note) hFE(2) Classification : 2003. 3. 27 Revision No : 3 1/3 KTA1385D/L Pc - Ta 25 POWER DISSIPATION PC (W) I C DERATING dT (%) 20 15 10 5 0 0 50 Ta=25 C d T - TC 160 140 120 100 80 60 40 20 0 S/b Lim Di ited ssi pa tio nL im ite d Tc =2 5 C 100 150 200 250 0 25 50 75 100 125 150 175 200 AMBIENT TEMPERATURE Ta ( C) CASE TEMPERATURE Tc ( C) SAFE OPERATING AREA -10 COLLECTOR CURRENT I C (A) -5 -3 IC MAX. -10 COLLECTOR CURRENT I C (A) I C (Pulse)MAX.* REVERSE BIAS SAFE OPERATING AREA -1 -0.5 -0.3 2m S 10 mS * * 20 Di 0m ss i S* S/ pati b L on im Li ite mi d ted V CEO MAX. -8 -6 -4 -2 -0.1 -1 * SINGLE NONREPETIVE PULSED Tc=25 C CURVES MUST BE DERATED LINERLY WITH INCREASE IN TEMPERATURE -3 -5 -10 -30 -50 -100 0 -20 -40 -60 VCEO (SUS) -80 -100 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR-EMITTER VOLTAGE VCE (V) I C - V CE -10 COLLECTOR CURRENT I C (A) DC CURRENT GAIN h FE -8 mA A 0m A -15 0m 0mA I B= -10 I B=-8 = I B =-60mA IB h FE - I C 1k 500 300 100 50 30 10 5 3 1 -0.01 VCE =-1V VCE =-2V -6 -4 -2 IB =-2 I B =-40mA I B =-30mA I B =-20mA I B =-10mA I B =0mA 00 0 -0.4 -0.8 -1.2 -1.6 -2.0 -0.03 -0.1 -0.3 -1 -3 -10 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT I C (A) 2003. 3. 27 Revision No : 3 2/3 KTA1385D/L VBE(sat), VCE(sat) - I C -10 SATURATION VOLTAGE VBE(sat), V CE(sat) (V) -5 -3 -1 -0.5 -0.3 -0.1 -0.05 -0.03 -0.01 VCE(sat) VBE(sat) I C /I B =10 -0.03 -0.1 -0.3 -1 -3 -10 COLLECTOR CURRENT I C (A) 2003. 3. 27 Revision No : 3 3/3 |
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