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| v02.1103 MICROWAVE CORPORATION HMC256 GaAs MMIC I/Q MIXER 5.9 - 12 GHz Features High Image Rejection: >30 dB Input IP3: +18 dB Wideband IF: DC to 1.5 GHz Small Size: 1.3 mm x 1.6 mm Typical Applications The HMC256 is ideal for: * Microwave Radio & VSAT * Test Instrumentation * Military Radios Radar & ECM * Space Functional Diagram General Description The HMC256 chip is a compact, 2.08 mm2, I/Q Mixer MMIC which can be used as an Image Reject Mixer (IRM) or SSB upconverter. The chip utilizes two standard Hittite double-balanced mixer cells and a Lange Coupler realized in GaAs MESFET technology. All data is with the chip in a 50 Ohm test fixture connected via 0.025 mm (1 mil) diameter wire bonds of minimal length <0.51 mm (<20 mils). A low frequency quadrature hybrid was used to interface the MMIC IF ports to a 120 MHz IF USB output. This provides an example of the I/Q Mixer in an IRM application. The IF may be used from DC to 1.5 GHz. This I/Q Mixer is a more reliable, much smaller replacement to hybrid drop-in style I/Q Mixer assemblies. 5 MIXERS - CHIP Electrical Specifications, TA = +25 C, As an Image Reject Mixer Parameter Min. Frequency Range, RF Frequency Range, LO Frequency Range, IF Conversion Loss Noise Figure (SSB) Image Rejection (IR) LO to RF Isolation LO to IF Isolation RF to IF Isolation IP3 (Input) 1 dB Gain Compression (Input) 24 22 27 24 IF = 70 - 200 MHz LO = +18 dBm Typ. 5.9 - 12 5.7 - 12 DC - 1.5 8 8 32 30 35 30 18 5 10.5 10.5 20 22 27 24 Max. Min. IF = 70 - 200 MHz LO = +15 dBm Typ. 7.1 - 11.7 6.9 - 11.7 DC - 1.5 8 8 30 30 35 30 17 5 10.5 10.5 Max. GHz GHz GHz dB dB dB dB dB dB dBm dBm Units 5 - 32 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com v02.1103 MICROWAVE CORPORATION HMC256 GaAs MMIC I/Q MIXER 5.9 - 12 GHz Conversion Gain to Desired Sideband vs. LO Drive, IF = 120 MHz USB 0 +18dBm CONVERSION GAIN (dB) -5 Conversion Gain to Desired Sideband vs. Temperature @ LO = +15 dBm, IF = 120 MHz USB 0 -55C CONVERSION GAIN (dB) -5 -10 -10 +14dBm -15 +16dBm -20 +12dBm +85C -15 +25C -20 5 6 7 8 9 10 11 12 13 FREQUENCY (GHz) 5 6 7 8 9 10 11 12 13 RF FREQUENCY (GHz) 5 MIXERS - CHIP Image Rejection vs. Temperature LO = +15 dBm, IF = 120MHz USB 50 +85C IMAGE REJECTION (dB) Image Rejection vs. LO Drive, IF = 120 MHz USB 50 +18dBm IMAGE REJECTION (dB) 40 +16dBm 40 30 30 20 -55C 10 +25C 0 5 6 7 8 9 10 11 12 13 RF FREQUENCY (GHz) 20 10 +14dBm 0 5 6 7 8 9 +12dBm 10 11 12 13 RF FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 5 - 33 v02.1103 MICROWAVE CORPORATION HMC256 GaAs MMIC I/Q MIXER 5.9 - 12 GHz Return Loss @ LO = +15 dBm 0 -5 RETURN LOSS (dB) -10 Isolations @ LO = +15 dBm 0 -10 ISOLATION (dB) -20 -30 -40 -50 -60 RF/IF LO/RF -15 -20 -25 LO -30 -35 -40 RF LO/IF 5 MIXERS - CHIP IF CONVERSION GAIN & RETURN LOSS (dB) 0 -5 -10 -15 -20 5 6 7 8 9 10 11 12 13 5 6 7 8 9 10 11 12 13 FREQUENCY (GHz) FREQUENCY (GHz) IF Bandwidth @ LO = 15 dBm IF Conversion Gain Input IP3 vs. LO Drive, IF = 120 MHz USB 25 THIRD ORDER INTERCEPT (dBm) +18dBm 20 15 +14dBm +16dBm Return Loss -25 -30 0 0.5 1 1.5 2 2.5 3 FREQUENCY (GHz) 10 6 6.5 7 FREQUENCY (GHz) 7.5 8 5 - 34 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com v02.1103 MICROWAVE CORPORATION HMC256 GaAs MMIC I/Q MIXER 5.9 - 12 GHz Absolute Maximum Ratings RF / IF Input LO Drive Channel Temperature Continuous Pdiss (T = 85 C) (derate 9.36 mW/C above 85 C) Thermal Resistance (RTH) (junction to die bottom) Storage Temperature Operating Temperature +13 dBm +27 dBm 150 C 0.61 W 106.8 C/W -65 to +150 C -55 to +85 C 5 MIXERS - CHIP Outline Drawing NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM]. 2. BOND PADS ARE .004" SQUARE. 3. TYPICAL BOND PAD SPACING CENTER TO CENTER IS .006". 4. BACKSIDE METALLIZATION: GOLD. 5. BOND PAD METALLIZATION: GOLD. 6. BACKSIDE METAL IS GROUND. 7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 5 - 35 v02.1103 MICROWAVE CORPORATION HMC256 GaAs MMIC I/Q MIXER 5.9 - 12 GHz Pad Descriptions Pad Number Function Description Interface Schematic 1 RF This pin is AC coupled and matched to 50 Ohm. 2 LO This pin is AC coupled and matched to 50 Ohm. 5 3,4 IF1, IF2 This pin is DC coupled. For operation to DC pin must not sink/source more than 2 mA of current or failure may result. MIXERS - CHIP Backside GND The backside of the die must connect to RF ground. Image Reject Mixer Suggested Application Circuit Below in Figure 1 is a photo and in Figure 2 a schematic of the HMC256 image reject mixer MMIC die connected to a quadrature hybrid (120 MHz) manufactured by Merrimac Industries West Caldwell, NJ (P/N QHZ-2A-120). Data presented for the HMC256 MMIC IRM was obtained using the circuit described here. Please note that the image rejection and isolation performance is dependent on the selection of the low frequency hybrid. The performance specification of the low frequency quadrature hybrid as well as the phase balance and VSWR of the interface circuit to the HMC256 MMIC will effect the overall IRM performance. Figure 1: Complete MIC IRM Assembly Figure 2: Schematic of HMC256 IRM MMIC Connected to the Quadrature Hybrid 5 - 36 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com v02.1103 MICROWAVE CORPORATION HMC256 GaAs MMIC I/Q MIXER 5.9 - 12 GHz Handling Precautions Follow these precautions to avoid permanent damage. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: Follow ESD precautions to protect against > 250V ESD strikes. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. Mounting The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 C and a tool temperature of 265 C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 C. DO NOT expose the chip to a temperature greater than 320 C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer's schedule. 5 MIXERS - CHIP 5 - 37 Wire Bonding Ball or wedge bond with 0.025 mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of 150 C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31 mm (12 mils). For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com |
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