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| SUM85N15-19 Vishay Siliconix N-Channel 150-V (D-S) 175_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 150 rDS(on) (W) 0.019 @ VGS = 10 V ID (A) 85 a D D D D TrenchFETr Power MOSFET 175_C Junction Temperature New Low Thermal Resistance Package 100% Rg Tested APPLICATIONS D Primary Side Switch D Automotive - 42-V EPS and ABS - DC/DC Conversion - Motor Drives D TO-263 G G DS Top View S Ordering Information: SUM85N15-19 SUM85N15-19-E3 (Lead Free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energyb Maximum Power Dissipationb Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25_C TA = 25_Cd TC = 25_C TC = 125_C Symbol VDS VGS ID IDM IAR EAR PD TJ, Tstg Limit 150 "20 85a 50a 180 50 125 375c 3.75 -55 to 175 Unit V A mJ W _C THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient Junction-to-Case (Drain) Notes a. Package limited. b. Duty cycle v 1%. c. See SOA curve for voltage derating. d. When mounted on 1" square PCB (FR-4 material). Document Number: 71703 S-32523--Rev. B, 08-Dec-03 www.vishay.com PCB Mount (TO-263)d Symbol RthJA RthJC Limit 40 0.4 Unit _C/W 1 SUM85N15-19 Vishay Siliconix SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VDS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 150 V, VGS = 0 V Zero Gate Voltage Drain Current g On-State Drain Currenta IDSS ID(on) VDS = 150 V, VGS = 0 V, TJ = 125_C VDS = 150 V, VGS = 0 V, TJ = 175_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 30 A Drain-Source On-State Resistancea Forward Transconductancea rDS(on) gfs VGS = 10 V, ID = 30 A, TJ = 125_C VGS = 10 V, ID = 30 A, TJ = 175_C VDS = 15 V, ID = 30 A 25 120 0.015 0.019 0.038 0.050 S W 150 2 4 "100 1 50 250 A m mA V nA Symbol Test Condition Min Typ Max Unit Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Chargec Gate-Source Chargec Gate-Drain Chargec Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf VDD = 75 V, RL = 0.9 W ID ^ 85 A, VGEN = 10 V, Rg = 2.5 W 0.5 VDS = 75 V, VGS = 10 V, ID = 85 A , , VGS = 0 V, VDS = 25 V, f = 1 MHz 4750 530 220 76 21 26 1.8 22 170 40 170 3.0 35 250 60 250 ns W 110 nC pF Gate Resistance Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec Source-Drain Diode Ratings and Characteristics (TC = 25_C)b Continuous Current Pulsed Current Forward Voltagea Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IS ISM VSD trr IRM(REC) Qrr IF = 50 A, di/dt = 100 A/ms IF = 85 A, VGS = 0 V 1.0 130 8 0.52 85 180 1.5 200 12 1.2 A V ns A mC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. www.vishay.com 2 Document Number: 71703 S-32523--Rev. B, 08-Dec-03 SUM85N15-19 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 180 150 I D - Drain Current (A) 120 90 60 30 0 0 2 4 6 8 10 VDS - Drain-to-Source Voltage (V) 5V 4V 0 0 1 2 3 4 5 6 7 VGS - Gate-to-Source Voltage (V) VGS = 10 thru 7 V 6V I D - Drain Current (A) 180 150 120 90 60 TC = 125_C 30 25_C -55_C Transfer Characteristics Transconductance 180 TC = -55_C r DS(on) - On-Resistance ( W ) 150 g fs - Transconductance (S) 25_C 120 90 60 30 0 0 20 40 60 80 100 120 125_C 0.04 On-Resistance vs. Drain Current 0.03 0.02 VGS = 10 V 0.01 0.00 0 20 40 60 80 100 120 ID - Drain Current (A) ID - Drain Current (A) 7000 6000 C - Capacitance (pF) 5000 4000 3000 2000 1000 0 0 25 50 Crss Capacitance 20 VDS = 75 V ID = 85 A Gate Charge V GS - Gate-to-Source Voltage (V) Ciss 16 12 8 4 Coss 0 75 100 125 150 0 25 50 75 100 125 150 VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC) www.vishay.com Document Number: 71703 S-32523--Rev. B, 08-Dec-03 3 SUM85N15-19 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature VGS = 10 V ID = 30 A I S - Source Current (A) 2.8 2.4 r DS(on) - On-Resistance (W) (Normalized) 2.0 1.6 1.2 0.8 0.4 0.0 -50 100 Source-Drain Diode Forward Voltage 10 TJ = 150_C TJ = 25_C -25 0 25 50 75 100 125 150 175 1 0 0.3 0.6 0.9 1.2 TJ - Junction Temperature (_C) VSD - Source-to-Drain Voltage (V) 1000 Avalanche Current vs. Time 190 Drain Source Breakdown vs. Junction Temperature 100 V (BR)DSS (V) I Dav (a) 180 ID = 1.0 mA 170 10 IAV (A) @ TA = 25_C 160 1 IAV (A) @ TA = 150_C 0.1 0.00001 0.0001 0.001 0.01 0.1 1 tin (Sec) 140 -50 -25 0 25 50 75 100 125 150 175 150 TJ - Junction Temperature (_C) www.vishay.com 4 Document Number: 71703 S-32523--Rev. B, 08-Dec-03 SUM85N15-19 Vishay Siliconix THERMAL RATINGS Maximum Avalanche and Drain Current vs. Case Temperature 90 75 100 I D - Drain Current (A) 60 45 30 15 0 0 25 50 75 100 125 150 175 TC - Ambient Temperature (_C) 0.1 0.1 1 10 100 1000 VDS - Drain-to-Source Voltage (V) I D - Drain Current (A) 1000 Safe Operating Area Limited by rDS(on) 10 ms 100 ms 10 1 ms 10 ms 100 ms dc 1 TC = 25_C Single Pulse 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 Normalized Thermal Transient Impedance, Junction-to-Case 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 Square Wave Pulse Duration (sec) 10-1 1 Document Number: 71703 S-32523--Rev. B, 08-Dec-03 www.vishay.com 5 |
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