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| BIDITM Transceiver Optical Module TM 1550 nm Emitting-/1300 nm Receiving Function, Medium Power SBM 81314X * * * * * * Designed for application in passive-optical networks Integrated Wavelength Division Multiplexer Bidirectional Transmission in 2nd and 3rd optical window Laser diode with Multi-Quantum Well structure Suitable for bit rates up to 1 Gbit/s Ternary Photodiode at rear mirror for monitoring and control of radiant power * Low noise/high bandwidth PIN diode * With singlemode fiber pigtail Type SBM 81314A SBM 81314G Ordering Code Q62702-Pxxxx Q62702-Pxxxx Connector DIN FC / PC Component with other connector types on request. Maximum Ratings Output power ratings refer to the optical port. The operating temperature of the submount is identical to the case temperature. Parameter Module Operating temperature range at case Storage temperature range Soldering temperature tmax = 30 s, 2 mm distance from bottom edge of case Laser Diode Forward current Radiant power CW Reverse voltage Symbol Values Unit TC Tstg TS - 40 ... + 85 - 40 ... + 85 260 C C C IF max e 150 2 2 mA mW V VR max Semiconductor Group 1 02.95 SBM 81314X Maximum Ratings (cont'd) Parameter Monitor Diode Forward current Reverse voltage PIN Photodiode Forward current Reverse voltage Maximum optical power into the optical port Symbol Values Unit IF max VR max 2 10 mA V IF max VBR port max 2 10 1.5 mA V mW Characteristics All optical data refer to the optical port, TC = 25 C. Parameter Laser Diode Optical output power Emission wavelength center of range e = 0.5 mW Spectral bandwidth e = 0.5 mW (RMS) Threshold current (- 40 ... + 85 C) Forward voltage e = 0.5 mW Radiant power at Ith Current above threshold at 25 C, e = 1 mW Current above threshold, e = 1 mW Variation of 1st derivative of P/I (0.1 ... 1mW) Differential series resistance Rise and fall time (10 % - 90 %) Temperature coefficient of wavelength e > 1.2 1510 ... 1590 5 8 ... 60 < 1.5 < 50 10 ... 35 7 ... 50 - 30 ... 30 <8 <1 < 0.5 mW nm nm mA V W mA mA % ns nm / K Symbol Values Unit Ith VF eth IF IF dP/dI rS tr, tf TC Semiconductor Group 2 SBM 81314X Characteristics (cont'd) Parameter Monitor Diode Dark current, VR = 2 V, e = 0, TC = 85 C Photocurrent, VR = 2 V, e = 0.5 mW Capacitance, VR = 2 V, f = 1 MHz Tracking error, VR = 2 V (see note 1) Detector Dark current, VR = 2 V, e = 0, TC = 85 C Spectral sensitivity, VR = 2 V, = 1300 nm, Capacitance, VR = 2 V, f = 1 MHz Rise and fall time, VR = 2 V, 10 % - 90 % Module Optical crosstalk (see note 2) Symbol Values Unit IR IP C2 TE 200 100 ... 1000 < 10 -1...1 nA A pF dB IR S C2 tr, tf < 50 > 0.65 < 1,5 <1 nA A/W pF ns CRT < - 47 dB Note 1: The tracking error TE is the variation rate of e at constant current Imon over a specified temperature range and relative to the reference point: Imon,ref = Imon (T = 25 C, e = 0.5 mW). Thus, TE is given by: TE[dB] = 10 x log Note 2: e [TC ] - e [25 C] e [25 C] Optical Crosstalk is defined as CRT = 10 x log (IDet,0/IDet,1) with: IDet,0 the photocurrent with e = 0.5 mW CW laser operation, VR = 2 V, with minimum optical return loss from fiber end and IDet,1 the photocurrent without e, but 0.5 mW optical input power, = 1300 nm. Semiconductor Group 3 SBM 81314X Accompanying Information T = 25 C: T = 85 C: Threshold current, current above threshold for 1 mW output power, monitor current for 0.5 mW output power, peak wavelength. Threshold current, current above threshold for 1 mW output power, monitor current for 0.5 mW output power. End of Life Values Parameter Threshold current at T = 85 C Current above threshold, over full temperature range, at Imon,ref = Imon (T = 25 C, e = 1 mW, BOL) Tracking error (see note 1) Detector dark current, VR = 2 V, T = 85 C Monitor dark current, VR = 2 V, T = 85 C Symbol Values < 80 7 ... 70 Unit mA mA Ith IF TE IR IR - 1.5 ... 1.5 < 400 <1 dB nA A Fiber Pigtail Type: single mode, silica Parameter Mode field diameter Cladding diameter Mode field/cladding concentricity error Cladding non-circularity Mode field non-circularity Cut-off wavelength Jacket diameter Bending radius Tensile strength fiber/case Length Values 91 125 2 <1 <2 <6 > 1270 0.9 0.1 > 30 >5 1 0.2 Unit m m m % % nm mm mm N m Semiconductor Group 4 SBM 81314X Laser Diode Radiant Power in Singlemode Fiber 1.2 Optical Power in MikroW 1 0.8 0.6 0.4 0.2 0 0 20 40 60 Forward Current in mA Relative Radiant Power e = f() 100 90 Relative Optical Power 80 70 60 50 40 30 20 10 0 1546 1548 1550 1552 1554 Wavelength in nm Laser Forward Current IF = f(VF) Monitor Diode Dark Current IR = f(TA) port = 0, VR = 5 V 100 90 Forward Current in mA 80 70 60 50 40 30 20 10 0 0 0.4 0.8 1.2 1.6 Forward Voltage in V Dark Current in nA 1000 100 10 1 0.1 0.01 -50 0 50 100 Temperature in C Semiconductor Group 5 SBM 81314X Capacitance of PIN Diode C = f(VR) port = 0, f = 1 MHz Rel. Spectral Sensitivity of PIN Diode VR = 5 V 10 1 0.9 0.8 Capacitance in pF Sensitivity in A/W 0.7 0.6 0.5 0.4 0.3 0.2 0.1 1 0.1 0.1 1 10 100 Reverse Bias in V 0 800 1200 1600 2000 Wavelength in nm Dark Current of PIN Diode IR = f(VR) IF = f(VF) Dark Current of PIN Diode IR = f(TA) port = 0, VR = 5 V 10 100 10 Dark Current in nA Dark Current in nA 1 1 0.1 0.1 0.01 0.01 0.001 0 5 10 15 20 Reverse Bias in V 0.001 -50 0 50 100 Ambient Temperature in C Semiconductor Group 6 SBM 81314X Package Outlines (Dimensions in mm) SBM 81314X Semiconductor Group 7 |
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