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| MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MPS650/D Amplifier Transistors COLLECTOR 3 2 BASE NPN 1 EMITTER 2 BASE PNP 1 EMITTER COLLECTOR 3 NPN MPS650 MPS651 * PNP MPS750 MPS751 * Voltage and current are negative for PNP transistors *Motorola Preferred Devices MAXIMUM RATINGS Rating Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Collector Current -- Continuous Total Power Dissipation @ TA = 25C Derate above 25C Total Power Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCE VCB VEB IC PD PD TJ, Tstg MPS650 MPS750 40 60 5.0 2.0 625 5.0 1.5 12 - 55 to +150 MPS651 MPS751 60 80 Unit Vdc Vdc Vdc Adc mW mW/C Watt mW/C C 1 2 3 CASE 29-04, STYLE 1 TO-92 (TO-226AA) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit C/W C/W ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector - Emitter Breakdown Voltage(1) (IC = 10 mAdc, IB = 0) Collector - Base Breakdown Voltage (IC = 100 Adc, IE = 0 ) Emitter - Base Breakdown Voltage (IC = 0, IE = 10 Adc) Collector Cutoff Current (VCB = 60 Vdc, IE = 0) (VCB = 80 Vdc, IE = 0) Emitter Cutoff Current (VEB = 4.0 V, IC = 0) 1. Pulse Test: Pulse Width 300 ms, Duty Cycle = 2.0%. MPS650, MPS750 MPS651, MPS751 IEBO V(BR)CEO MPS650, MPS750 MPS651, MPS751 V(BR)CBO MPS650, MPS750 MPS651, MPS751 V(BR)EBO ICBO -- -- -- 0.1 0.1 0.1 Adc 60 80 5.0 -- -- -- Vdc Adc 40 60 -- -- Vdc Vdc Preferred devices are Motorola recommended choices for future use and best overall value. Motorola Small-Signal Transistors, FETs and Diodes Device Data (c) Motorola, Inc. 1996 1 NPN MPS650 MPS651 PNP MPS750 MPS751 ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit ON CHARACTERISTICS(1) DC Current Gain (IC = 50 mA, VCE = 2.0 V) (IC = 500 mA, VCE = 2.0 V) (IC = 1.0 A, VCE = 2.0 V) (IC = 2.0 A, VCE = 2.0 V) Collector - Emitter Saturation Voltage (IC = 2.0 A, IB = 200 mA) (IC = 1.0 A, IB = 100 mA) Base-Emitter On Voltage (IC = 1.0 A, VCE = 2.0 V) Base - Emitter Saturation Voltage (IC = 1.0 A, IB = 100 mA) hFE 75 75 75 40 VCE(sat) -- -- VBE(on) VBE(sat) -- -- 0.5 0.3 1.0 1.2 Vdc Vdc -- -- -- -- Vdc -- SMALL- SIGNAL CHARACTERISTICS Current - Gain -- Bandwidth Product(2) (IC = 50 mAdc, VCE = 5.0 Vdc, f = 100 MHz) 1. Pulse Test: Pulse Width 300 ms, Duty Cycle = 2.0%. 2. fT is defined as the frequency at which |hfe| extrapolates to unity. fT 75 -- MHz NPN 300 270 240 hFE, DC CURRENT GAIN 210 180 150 120 90 60 30 0 10 20 50 100 200 500 1.0 A 2.0 A 4.0 A IC, COLLECTOR CURRENT (mA) - 55C 25C TJ = 125C hFE, DC CURRENT GAIN VCE = 2.0 V 250 225 200 175 150 125 100 75 50 25 0 -10 - 20 - 55C 25C TJ = 125C PNP VCE = -2.0 V - 50 -10 - 200 - 500 -1.0 A -2.0 A -4.0 A 0 IC, COLLECTOR CURRENT (mA) Figure 1. MPS650, MPS651 Typical DC Current Gain NPN 2.0 1.8 1.6 V, VOLTAGE (VOLTS) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 50 100 200 500 1.0 A IC, COLLECTOR CURRENT (mA) 2.0 A 4.0 A VCE(sat) @ IC/IB = 10 VBE(on) @ VCE = 2.0 V VBE(sat) @ IC/IB = 10 V, VOLTAGE (VOLTS) -2.0 -1.8 -1.6 -1.4 -1.2 -1.0 -0.8 -0.6 -0.4 -0.2 0 -50 Figure 2. MPS750, MPS751 Typical DC Current Gain PNP VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = 2.0 V VCE(sat) @ IC/IB = 10 -10 -20 -50 -1.0 A 0 IC, COLLECTOR CURRENT (mA) 0 0 -2.0 A -4.0 A Figure 3. MPS650, MPS651 On Voltages Figure 4. MPS750, MPS751 On Voltages 2 Motorola Small-Signal Transistors, FETs and Diodes Device Data NPN MPS650 MPS651 PNP MPS750 MPS751 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) NPN 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 IB, BASE CURRENT (mA) 50 100 200 500 IC = 10 mA IC = 100 mA IC = 500 mA IC = 2.0 A TJ = 25C PNP -1.0 -0.9 -0.8 -0.7 -0.6 -0.5 -0.4 -0.3 -0.2 -0.1 IC = -10 mA IC = -100 mA -50 -100 -200 -500 IC = -500 mA IC = -2.0 A TJ = 25C 0 -0.0 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 5 IB, BASE CURRENT (mA) Figure 5. MPS650, MPS651 Collector Saturation Region NPN 10 4.0 IC, COLLECTOR CURRENT 2.0 1.0 0.5 0.2 0.1 0.05 0.02 0.01 1.0 TA = 25C 1.0 ms MPS65 0 MPS65 1 TC = 25C 100 s -10 -4.0 -2.0 -1.0 -0.5 -0.2 -0.1 -0.05 -0.02 100 -0.01 -1.0 Figure 6. MPS750, MPS751 Collector Saturation Region PNP 100 s 1.0 ms MPS75 0 MPS75 1 TC = 25C TA = 25C WIRE LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 2.0 5.0 10 20 50 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) WIRE LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT -2.0 -5.0 -10 -20 -50 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) -100 Figure 7. MPS650, MPS651 SOA, Safe Operating Area Figure 8. MPS750, MPS751 SOA, Safe Operating Area Motorola Small-Signal Transistors, FETs and Diodes Device Data 3 NPN MPS650 MPS651 PNP MPS750 MPS751 PACKAGE DIMENSIONS NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --- 0.250 --- 0.080 0.105 --- 0.100 0.115 --- 0.135 --- MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --- 6.35 --- 2.04 2.66 --- 2.54 2.93 --- 3.43 --- A R P SEATING PLANE B F L K D XX G H V 1 J C N N SECTION X-X DIM A B C D F G H J K L N P R V CASE 029-04 (TO-226AA) ISSUE AD STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1-800-441-2447 or 602-303-5454 MFAX: RMFAX0@email.sps.mot.com - TOUCHTONE 602-244-6609 INTERNET: http://Design-NET.com JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-81-3521-8315 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 4 MPS650/D Motorola Small-Signal Transistors, FETs and Diodes Device Data *MPS650/D* |
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