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Rev 2: Nov 2004
AO6604, AO6604L ( Green Product ) Complementary Enhancement Mode Field Effect Transistor
General Description
The AO6604 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. AO6604L( Green Product ) is offered in a lead-free package.
Features
n-channel p-channel -20V VDS (V) = 20V -2.5A ID = 3.4A RDS(ON) < 60m < 110m (VGS = 4.5V) < 75m < 140m (VGS = 2.5V) < 100m < 200m (VGS = 1.8V)
D1 TSOP6 Top View G1 S2 G2 16 25 34 D1 S1 D2 G1 S1 G2
D2
S2
n-channel
p-channel
Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Max n-channel Symbol VDS Drain-Source Voltage 20 Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation
B
Max p-channel -20 8 -2.5 -2.0 -15 1.15 0.73 -55 to 150
Units V V A
VGS TA=25C TA=70C TA=25C TA=70C ID IDM PD TJ, TSTG
8 3.4 2.7 15 1.15 0.73 -55 to 150
W C
Junction and Storage Temperature Range
Thermal Characteristics: n-channel and p-channel Parameter t 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Lead C
Symbol RJA RJL
Typ 78 106 64
Max 110 150 80
Units C/W C/W C/W
Alpha & Omega Semiconductor, Ltd.
AO6604, AO6604L
N-channel MOSFET Electrical Characteristics (T J=25C unless otherwise noted) Symbol Parameter Conditions ID=250A, VGS=0V VDS=16V, VGS=0V TJ=55C VDS=0V, VGS=8V VDS=VGS ID=250A VGS=4.5V, VDS=5V VGS=4.5V, ID=3.4A RDS(ON) Static Drain-Source On-Resistance TJ=125C VGS=2.5V, ID=3A VGS=1.8V, ID=2A gFS VSD IS Forward Transconductance VDS=5V, ID=3.4A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current 0.4 15 46 63 57 72 10 0.76 1 2 436 VGS=0V, VDS=10V, f=1MHz VGS=0V, VDS=0V, f=1MHz 66 44 3 6.2 VGS=4.5V, VDS=10V, ID=3.4A 1.6 0.5 5.5 VGS=5V, VDS=10V, RL=3, RGEN=3 IF=3.4A, dI/dt=100A/s 6.3 40 12.7 12.3 3.5 16 4 8.1 570 60 80 75 100 0.6 Min 20 1 5 100 1 Typ Max Units V A nA V A m m m S V A pF pF pF nC nC nC ns ns ns ns ns nC
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr tD(off) tf trr Qrr Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=3.4A, dI/dt=100A/s
A: The value of R JA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The value in any a given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO6604, AO6604L
N-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
16 10 8V 4.5V 8 2V ID(A) 3V 2.5V 6 4 4 VGS=1.5V 2 0 0 1 2 3 4 5 0 0.5 1 1.5 2 2.5 VDS (Volts) Fig 1: On-Region Characteristics 100 Normalized On-Resistance 1.8 VGS=2.5V 1.6 1.4 1.2 1 0.8 0 4 8 12 0 25 50 75 100 125 150 175 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 100 90 80 RDS(ON) (m) 70 60 50 40 30 20 0 2 4 6 8 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 25C 1E-04 1E-05 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics 125C IS (A) ID=3.4A 1E-01 1E-02 25C 1E-03 1E+01 1E+00 125C Temperature (C) Figure 4: On-Resistance vs. Junction Temperature VGS=1.8V ID=3.4A VGS=4.5V VGS(Volts) Figure 2: Transfer Characteristics 125C 25C 0 VDS=5V
12
ID (A)
8
80 RDS(ON) (m)
VGS=1.8V
60
VGS=2.5V
40
VGS=4.5V
20
Alpha & Omega Semiconductor, Ltd.
AO6604, AO6604L
N-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5 4 VGS (Volts) 3 2 1 0 0 2 4 6 8 Qg (nC) Figure 7: Gate-Charge Characteristics VDS=10V ID=3.4A 800
Capacitance (pF)
600
Ciss
400
200
Coss
Crss
0 0 5 10 15 20 VDS (Volts) Figure 8: Capacitance Characteristics
100.0 TJ(Max)=150C TA=25C 10.0 RDS(ON) limited 0.1s 1.0 1s 10s DC 0.1 0.1 1 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 10ms 100s
20
TJ(Max)=150C TA=25C
15 Power (W) 1ms 10s
ID (Amps)
10
5
0 0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
10 ZJA Normalized Transient Thermal Resistance
D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=110C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1 Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1
PD Ton
T
10
100
1000
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
AO6604, AO6604L
P-channel MOSFET Electrical Characteristics (T J=25C unless otherwise noted) Symbol Parameter Conditions ID=-250A, VGS=0V VDS=-16V, VGS=0V TJ=55C VDS=0V, VGS=8V VDS=VGS ID=-250A VGS=-4.5V, VDS=-5V VGS=-4.5V, ID=-2.5A RDS(ON) Static Drain-Source On-Resistance TJ=125C VGS=-2.5V, ID=-2A VGS=-1.8V, ID=-1A gFS VSD IS Forward Transconductance VDS=-5V, ID=-3A 4 Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current -0.3 -15 86 116 113 151 6 -0.78 -1 -2 540 VGS=0V, VDS=-10V, f=1MHz VGS=0V, VDS=0V, f=1MHz 72 49 12 6.1 VGS=-4.5V, VDS=-10V, ID=-2.5A 0.6 1.6 10 VGS=-4.5V, VDS=-10V, RL=3.9, RGEN=3 IF=-2.5A, dI/dt=100A/s 12 44 22 21 7.5 28 15.6 8 700 110 145 140 200 -0.55 Min -20 -1 -5 100 -1 Typ Max Units V A nA V A m m m S V A pF pF pF nC nC nC ns ns ns ns ns nC
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr tD(off) tf trr Qrr Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=-2.5A, dI/dt=100A/s
A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25C. The value in any a given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO6604, AO6604L
P-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15 -4.5V -3.0V -8V 10 -ID (A) -ID(A) -2.0V 4 -2.5V 6 VDS=-5V
5 VGS=-1.5V
2
125C 25C
0 0 2 3 4 -VDS (Volts) Fig 1: On-Region Characteristics 1 5
0 0 1 1.5 -VGS(Volts) Figure 2: Transfer Characteristics 0.5 2
200 Normalized On-Resistance VGS=-1.8V RDS(ON) (m) 150 VGS=-2.5V 100
1.8 1.6 1.4 1.2 1 0.8 0 2 4 6 0 25 50 75 100 125 150 175 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 1E+01 1E+00 ID=-2.5A ID=-2.5A VGS=-1.8V VGS=-4.5V VGS=-2.5V
VGS=-4.5V
50
200
150 RDS(ON) (m) -IS (A)
1E-01 1E-02 1E-03 1E-04 1E-05
125C 25C
125C 100 25C
50 0 2 4 6 8 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage
1E-06 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics
Alpha & Omega Semiconductor, Ltd.
AO6604, AO6604L
P-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5 4 -VGS (Volts) 3 2 1 0 0 2 4 6 8 -Qg (nC) Figure 7: Gate-Charge Characteristics VDS=-10V ID=-2.5A Capacitance (pF) 800
600
Ciss
400
200
Crss Coss
0 0 5 10 15 20 -VDS (Volts) Figure 8: Capacitance Characteristics
100.0 TJ(Max)=150C TA=25C -ID (Amps) 10.0 RDS(ON) limited 1.0 1s 10s DC 0.1 0.1 1 -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 1ms 0.1s 10ms 100s 10s Power (W)
20
TJ(Max)=150C TA=25C
15
10
5
0 0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
10 ZJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=110C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1 Single Pulse 0.01 0.00001
PD Ton T
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.

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