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2SK3875-01
N-CHANNEL SILICON POWER MOSFET
Outline Drawings (mm)
200407
FUJI POWER MOSFET
Super FAP-G Series
Features
High speed switching, Low on-resistance Low driving power, Avalanche-proof No secondary breakdown
Applications
Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters
Maximum ratings and characteristic
Absolute maximum ratings (Tc=25C unless otherwise specified)
Item Drain-source voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Non-Repetitive Maximum Avalanche current Repetitive Maximum Avalanche current Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. Power Dissipation Operating and Storage Temperature range Symbol VDS VDSX ID ID(puls] VGS IAS IAR EAS EAR dVDS/dt dV/dt PD Tch Tstg Ratings 900 900 13 52 30 13 6.5 1006 35.5 40 5 355 2.50 +150 -55 to +150 Unit V V A A V A A mJ mJ Remarks VGS=-30V
Equivalent circuit schematic
Drain(D)
Note *1
Gate(G) Source(S)
Note *2 Note *3
Note *1:Tch< 150C = Note *2:StartingTch=25C,IAS=5.2A,L=67.5mH, VCC=100V,RG=50 EAS limited by maximum channel temperature and Avalanche current. See to the `Avalanche Energy' graph Note *3:Repetitive rating:Pulse width limited by maximum channel temperature. See to the `Transient Thermal impedance' graph. Note *4:IF< -ID, -di/dt=50A/s,VCC< BVDSS, Tch< 150C = = =
kV/s VDS < 900V = kV/s Note *4 Tc=25C W Ta=25C C C
Electrical characteristics (Tc =25C unless otherwise specified)
Item Drain-Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current Gate-Source Leakage Current Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time ton Turn-Off Time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol BVDSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VSD trr Qrr Symbol Rth(ch-c) Rth(ch-a)
Test Conditions ID= 250A VGS=0V ID= 250A VDS=VGS VDS=900V VGS=0V Tch=25C Tch=125C VDS=720V VGS=0V VGS=30V VDS=0V ID=6.5A VGS=10V ID=6.5A VDS=25V VDS=25V VGS=0V f=1MHz VCC=600V ID=6.5A VGS=10V RGS=10 VCC=450V ID=13A VGS=10V IF=13A VGS=0V Tch=25C IF=13A VGS=0V -di/dt=100A/s Tch=25C Test Conditions channel to case channel to ambient
Min.
900 3.0
Typ.
Max. Units
5.0 25 250 100 1.00 V V A nA S pF
0.79 6.0 12 1750 2625 220 330 13 19.5 20 30 12 18 60 90 15 22.5 46 69 14 21 17 26 1.10 1.50 4.5 25
ns
nC
V s C
Thermal characteristics
Item Thermal resistance www.fujielectric.co.jp/fdt/scd
Min.
Typ.
Max.
0.352 50.0
Units
C/W C/W
1
2SK3875-01
Characteristics
Allowable Power Dissipation PD=f(Tc)
FUJI POWER MOSFET
400
20
Typical Output Characteristics ID=f(VDS):80 s pulse test,Tch=25 C
20V
350 16 300 6.5V
250
12
PD [W]
200
ID [A]
8 4 VGS=5.5V 0 0 25 50 75 100 125 150 0 4 8 12 16 20
150
100
50
0
Tc [C]
VDS [V]
100
Typical Transfer Characteristic ID=f(VGS):80 s pulse test,VDS=25V,Tch=25C
100
Typical Transconductance gfs=f(ID):80 s pulse test,VDS=25V,Tch=25C
10 10
ID[A]
1 1
0.1 0.1 0.1
0
1
2
3
4
5
6
7
8
9
10
gfs [S]
1
10
100
VGS[V]
ID [A]
Typical Drain-Source on-state Resistance RDS(on)=f(ID):80 s pulse test,Tch=25C
VGS=5.5V 1.4 6.0V
3.00 2.75 2.50 2.25
Drain-Source On-state Resistance RDS(on)=f(Tch):ID=6.5A,VGS=10V
1.2
RDS(on) [ ]
2.00
RDS(on) [ ]
6.5V 1.0
8.0V 10V 20V
1.75 1.50 1.25 1.00 max.
0.8 0.75 0.50 0.6 0.25 0.00 0 5 10 15 20 -50 -25 0 25 50
typ.
75
100
125
150
ID [A]
Tch [C]
2
2SK3875-01
Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250A
FUJI POWER MOSFET
7.0 6.5 6.0 5.5 5.0
14
Typical Gate Charge Characteristics VGS=f(Qg):ID=13A,Tch=25 C
12 Vcc= 180V 450V 720V
max.
10
VGS(th) [V]
4.5
3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 min.
VGS [V]
4.0
8
6
4
2
0 0 10 20 30 40 50 60 70
Tch [C]
Qg [nC]
10
4
Typical Capacitance C=f(VDS):VGS=0V,f=1MHz
100
Typical Forward Characteristics of Reverse Diode IF=f(VSD):80 s pulse test,Tch=25C
Ciss 10
3
10
C [pF]
10
2
Coss
IF [A]
1
3
10
1
Crss
10
0
10
-1
10
0
10
1
10
2
10
0.1 0.00
0.25
0.50
0.75
1.00
1.25
1.50
VDS [V]
VSD [V]
10
3
Typical Switching Characteristics vs. ID t=f(ID):Vcc=600V,VGS=10V,RG=10
1200
Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=100V
IAS=5.2A
1000 tf 10
2
td(off)
800 IAS=7.8A 600
td(on) 10
1
EAV [mJ]
t [ns]
400 tr 200
IAS=13A
10
0
0
-1
10
10
0
10
1
10
2
0
25
50
75
100
125
150
ID [A]
starting Tch [C]
3
2SK3875-01
Maximum Avalanche Current vs. starting Tch I(AV)=f(starting Tch):Vcc=100V
FUJI POWER MOSFET
16
14
12
Non-Repetitive (Single Pulse)
10
IAV [A]
8 Repetitive 6
4
2
0 0 25 50 75 100 125 150 175 200
starting Tch [C]
10
2
Maximum Avalanche Current Pulsewidth IAV=f(tAV):starting Tch=25 C,Vcc=100V
Avalanche Current I AV [A]
Single Pulse
1
10
10
0
10
-1
10 -8 10
-2
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
tAV [sec]
(Maximum Transient Thermal Impedance) (Zth(ch-c)=f(t):D=0)
10
1
10
0
(Zth(ch-c) [C/W])
10
-1
10
-2
10
-3
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
t [sec]
http://www.fujielectric.co.jp/fdt/scd/
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