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RF2127
2
Typical Applications
* DECT Cordless Applications * PCS Communication Systems * Commercial and Consumer Systems * Portable Battery-Powered Equipment
MEDIUM POWER LINEAR AMPLIFIER
2
POWER AMPLIFIERS
Product Description
The RF2127 is a medium-power, high-efficiency, linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in 1800MHz digital PCS phone transmitters requiring linear amplification operating between 1800MHz and 1900MHz, with over 100mW transmitted power. It will also function as the driver stage for the RF2125 high power amplifier. A simple power down function is included for TDD operation.
0.160 0.152 0.018 0.014
-A0.010 0.004
0.200 0.192
0.050
0.248 0.232 8 MAX 0 MIN 0.0500 0.0164
0.059 0.057
0.0100 0.0076
NOTES: 1. Shaded lead is pin 1. 2. All dimensions are excluding flash, protrusions or burrs. 3. Lead coplanarity: 0.005 with respect to datum "A". 4. Package surface finish: Matte (Charmilles #24~27).
Optimum Technology Matching(R) Applied
Si BJT Si Bi-CMOS
u
Package Style: SOIC-8
GaAs HBT SiGe HBT
GaAs MESFET Si CMOS
Features
* Single 3.0V to 6.5V Supply * 100mW Linear Output Power * 25dB Small Signal Gain * 30% Efficiency * Digitally Controlled Power Down Mode * 1500MHz to 1900MHz Operation
VCC2 1 GND1 2 PD 3 RF IN 4
BIAS CIRCUITS
8 VCC1 7 RF OUT 6 RF OUT 5 GND2
Ordering Information
RF2127 RF2127 PCBA Medium Power Linear Amplifier Fully Assembled Evaluation Board
Functional Block Diagram
RF Micro Devices, Inc. 7628 Thorndike Road Greensboro, NC 27409, USA
Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com
Rev A3 010720
2-79
RF2127
Absolute Maximum Ratings Parameter
Supply Voltage (VCC) Power Down Voltage (VPD) DC Supply Current Input RF Power Output Load VSWR Operating Ambient Temperature Storage Temperature
Rating
-0.5 to +7.5 -0.5 to +5.5 125 +12 20:1 -40 to +85 -40 to +150
Unit
VDC V mA dBm C C Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s).
2
POWER AMPLIFIERS
Parameter
Overall
Frequency Range Maximum Output Power Maximum Output Power Total CW Efficiency Small-signal Gain Second Harmonic Third Harmonic Input VSWR Input Impedance Noise Figure
Specification Min. Typ. Max.
Unit
Condition
T=25 C, VCC =5V, VPD =5V, ZLOAD =106, PIN =-3dBm, Freq=1800MHz
23
1500 to 1900 +20 +23 30 25 -25 -22 2:1 50 7 +17 -40 -45 -44 36
MHz dBm dBm % dB dBc dBc dB dBm dBc dBc dBc %
VCC =5V, Pin=-3dBm VCC =6V, Pin=0dBm Maximum output, VCC =VPD =5V POUT =20dBm POUT =20dBm
Two-Tone Specification
Average Two-Tone Power IM3 IM5 IM7 Two-Tone Power-Added Efficiency PEP-3dB POUT =+14dBM for each tone POUT =+14dBM for each tone POUT =+14dBM for each tone
Power Control
Power Down "ON" Power Down "OFF" VCC 0 5 3.0 to 6.5 50 80 1.2 V V V V mA mA A Voltage supplied to the input; Part is "ON" Voltage supplied to the input; Part is "OFF" Specifications Operating Limits Operating Idle Maximum output Power Down
Power Supply
Voltage Current
65 10
2-80
Rev A3 010720
RF2127
Pin 1 2 Function VCC2 GND1 Description
Power supply for the driver stage and interstage matching. Matching is typically done by a microstrip line to VCC that is RF grounded at the VCC side. See the application information for details. Ground connection for the driver stage. Keep traces physically short and connect immediately to the ground plane for best performance. This connection should be separated from the ground connection for the output stage, i.e., using separate traces and vias. Power Down control. When this pin is "low", all circuits are shut off. A "low" is typically 1.2V or less at room temperature. When this pin is "high", all circuits are operating normally. A "high" is VCC. If VPD is below VCC, output power and performance will be degraded. This could be used to obtain some gain control, but results are not guaranteed. RF Input. This is a 50 input, but the actual impedance depends on the matching provided on pin 1. An external DC blocking capacitor is required if this port is connected to a DC path to ground. Ground connection for the output stage. Keep traces physically short and connect immediately to the ground plane for best performance. This connection should be separated from the ground connection for the driver stage, i.e., using separate traces and vias. RF Output and power supply for the output stage. Bias for the output stage needs to be provided on this pin. This can be done through a quarter-wave microstrip that is RF grounded on the other end. For matching to 50 , an external series microstrip line is required. Same as pin 6. Power supply for the bias circuits. An external RF bypass capacitor of 22 pF is required. Keep the traces to the capacitor as short as possible, and connect the capacitor immediately to the ground plane.
Interface Schematic
4 5
RF IN GND2
6
RF OUT
7 8
RF OUT VCC1
Rev A3 010720
2-81
POWER AMPLIFIERS
3
PD
2
RF2127
Application Schematic 1850MHz
VCC 1 nF 330 pF 22 pF 0.010" x 0.170" W=0.010" L=Quarter wave length BIAS CIRCUITS 22 pF 8 16 pF 7 6 5 PACKAGE BASE PCB material: FR-4 Thickness: 0.031" 50 strip RF OUT
2
POWER AMPLIFIERS
1 2 VPD POWER DOWN RF IN 3 6.2 pF 0.010" x 0.170" 4
Evaluation Board Schematic
(Download Bill of Materials from www.rfmd.com.)
P1-1 C1 1 F C2 1 nF C4 330 pF W=0.010" L=0.170" 1 2 P1-3 C3 1 nF RF IN J1 C6 6.2 pF C5 330 pF 3 4 BIAS CIRCUITS 8 7 6 5 0.025" x 0.060" 0.025" x 0.165" C8 16 pF (PCB mat'l: FR-4, Thickness: 0.031") C7 22 pF P1 P1-1 L=0.320" W=0.010" 1 2 P1-3 RF OUT J2 2127400 Rev A 3 VCC GND VPD
0.010" x 0.170"
2-82
Rev A3 010720
RF2127
Evaluation Board Layout Board Size 1.55" x 1.07"
2
POWER AMPLIFIERS
Rev A3 010720
2-83
RF2127
2
POWER AMPLIFIERS
2-84
Rev A3 010720

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