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(R)
STPS20S100C
POWER SCHOTTKY RECTIFIER
Table 1: Main Product Characteristics IF(AV) VRRM Tj VF(max) FEATURES AND BENEFITS

2 x 10 A 100 V 175C 0.71 V
A1 K A2
High junction temperature capability for converters located in confined enrironment Low leakage current at high temperature Low static and dynamic losses as a result of the Schottky barrier Avalanche specification
A1
K
A2
A2 K A1
TO-220AB STPS20S100CT
K
TO-220FPAB STPS20S100CFP
DESCRIPTION Schottky barrier rectifier designed for high frequency miniature Switched Mode Power Supplies such as adaptators and on board DC/DC converters. Packaged in TO-220AB, I2PAK and TO-220FPAB.
A2 A1 K
I2PAK STPS20S100CR
Table 2: Order Codes Part Numbers STPS20S100CT STPS20S100CFP STPS20S100CR Marking STPS20S100CT STPS20S100CFP STPS20S100CR
March 2005
REV. 1
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STPS20S100C
Table 3: Absolute Ratings (limiting values, per diode) Symbol VRRM IF(RMS) RMS forward voltage TO-220AB / IF(AV) Average forward current I2PAK = 0.5 TO-220FPAC Surge non repetitive forward current Repetitive peak avalanche power Storage temperature range Maximum operating junction temperature * Critical rate of rise of reverse voltage Tc = 150C Tc = 140C Per diode Per device Per diode Per device Parameter Repetitive peak reverse voltage Value 100 30 10 20 10 20 180 7200 -65 to + 175 175 10000 Unit V A
A
IFSM PARM Tstg Tj dV/dt
tp = 10ms sinusoidal tp = 1s Tj = 25C
A W C C V/s
dPtot 1 * : --------------- > ------------------------- thermal runaway condition for a diode on its own heatsink Rth ( j - a ) dTj
Table 4: Thermal Resistance Symbol Rth(j-c) Rth(c) Rth(j-c) Rth(c)
When the diodes 1 and 2 are used simultaneously: Tj(diode 1) = P(diode 1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
Parameter Per diode Junction to case TO-220AB / I PAK
2
Value 2.2 1.3 0.3 4.5 3.5 2.5 Total Coupling Per diode
Unit C/W
Junction to case
TO-220FPAB
Total Coupling
C/W
Table 5: Static Electrical Characteristics (per diode) Symbol IR * Parameter Reverse leakage current Tests conditions Tj = 25C Tj = 125C Tj = 25C Tj = 125C VF ** Forward voltage drop Tj = 25C Tj = 125C Tj = 25C Tj = 125C
Pulse test: * tp = 5 ms, < 2% ** tp = 380 s, < 2%
Min.
Typ 1.3 0.57 0.66 0.74
Max. 3.5 4.5 0.73 0.61 0.85 0.71 0.94 0.80
Unit A mA
VR = VRRM IF = 5A IF = 10A IF = 20A
V
To evaluate the conduction losses use the following equation: P = 0.62 x IF(AV) + 0.009 IF (RMS)
2
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STPS20S100C
Figure 1: Average forward power dissipation versus average forward current (per diode)
PF(AV)(W)
10 9 8 7 6 5
5
Figure 2: Average forward current versus ambient temperature ( = 0.5, per diode)
IF(AV)(A)
= 0.1 = 0.05
= 0.2
= 0.5
11
Rth(j-a)=Rth(j-c)
IPAK/TO-220AB
10 9
TO-220FPAB
8
=1
7
Rth(j-a)=15C/W
6
4 3 2 1 0 0 1 2 3 4 5 6 7 8 9
4 3
T
2 1
T
IF(AV)(A)
=tp/T
10 11 12
tp
13
0 0
=tp/T
25
tp
50
Tamb(C)
75 100 125 150 175
Figure 3: Normalized avalanche derating versus pulse duration
PARM(tp) PARM(1s)
1
power
Figure 4: Normalized avalanche derating versus junction temperature
PARM(tp) PARM(25C)
power
1.2 1
0.1
0.8 0.6
0.01
0.4 0.2
0.001
0.01 0.1 1
tp(s)
10 100 1000
Tj(C)
0 0 25 50 75 100 125 150
Figure 5: Non repetitive surge peak forward current versus overload duration (maximum values, per diode)
IM(A)
180
Figure 6: Non repetitive surge peak forward current versus overload duration (maximum values, per diode) (TO-220FPAB)
IM(A)
120 110 100 90
160 140 120 100 80 60 40 20 0 1.E-03 1.E-02 1.E-01 1.E+00
IM t
80 70
Ta=25C
Ta=25C
60 50 40
Ta=75C
Ta=75C
Ta=125C
IM
30 20
t
10
=0.5
t(s)
Ta=125C
=0.5
t(s)
1.E-02 1.E-01 1.E+00
0 1.E-03
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STPS20S100C
Figure 7: Relative variation of thermal impedance junction to case versus pulse duration (per diode)
Zth(j-c)/Rth(j-c)
1.0
1.0
Figure 8: Relative variation of thermal impedance junction to case versus pulse duration (per diode) (TO-220FPAB)
Zth(j-c)/Rth(j-c)
0.9
0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 1.E-03 1.E-02 1.E-01 1.E+00
Single pulse = 0.2 = 0.1 = 0.5
0.8 0.7 0.6 0.5 0.4 0.3
= 0.5
T
0.2 0.1
= 0.2 = 0.1
T
tp(s)
=tp/T
Single pulse
tp
tp(s)
1.E-02 1.E-01
=tp/T
1.E+00
tp
1.E+01
0.0 1.E-03
Figure 7: Reverse leakage current versus reverse voltage applied (typical values, per diode)
IR(mA)
1.E+01
Tj=150C
Figure 8: Junction capacitance versus reverse voltage applied (typical values, per diode)
C(pF)
1000
F=1MHz VOSC=30mVRMS Tj=25C
1.E+00
Tj=125C
1.E-01
Tj=100C
100
Tj=75C
1.E-02
Tj=50C
1.E-03
Tj=25C
VR(V)
1.E-04 10 20 30 40 50 60 70 80 90 100
VR(V)
10 1 10 100
Figure 9: Forward voltage drop versus forward current (per diode)
IFM(A)
100
Tj=125C (maximum values)
Tj=125C (typical values)
10
Tj=25C (maximum values)
VFM(V)
1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
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STPS20S100C
Figure 10: TO-220FPAB Package Mechanical Data REF.
A H B
Dia L6 L2 L3 L5 F1 L4 F2 D L7
F G1 G
E
A B D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7 Dia.
DIMENSIONS Millimeters Inches Min. Max. Min. Max. 4.4 4.6 0.173 0.181 2.5 2.7 0.098 0.106 2.5 2.75 0.098 0.108 0.45 0.7 0.018 0.027 0.75 1 0.03 0.039 1.15 1.7 0.045 0.067 1.15 1.7 0.045 0.067 4.95 5.2 0.195 0.205 2.4 2.7 0.094 0.106 10 10.4 0.393 0.409 16 Typ. 0.63 Typ. 28.6 30.6 1.126 1.205 9.8 10.6 0.386 0.417 2.9 3.6 0.114 0.142 15.9 16.4 0.626 0.646 9 9.3 0.354 0.366 3 3.2 0.118 0.126
Figure 11: I2PAK Package Mechanical Data REF. Min.
A E L2 c2
DIMENSIONS Millimeters Max. 4.60 2.69 0.93 1.70 1.70 0.60 1.36 9.35 2.70 10.4 13.6 3.78 1.40 Inches Min. 0.173 0.098 0.028 0.044 0.044 0.018 0.048 0.352 0.094 0.394 0.516 0.137 0.050 Max. 0.181 0.106 0.037 0.067 0.067 0.024 0.054 0.368 0.106 0.409 0.535 0.149 0.055
A A1 b b1 b2
4.40 2.49 0.70 1.14 1.14 0.45 1.23 8.95 2.40 10.0 13.1 3.48 1.27
D
c c2
A1
L1 L b1
D e E L L1 L2
b e e1
c
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STPS20S100C
Figure 12: TO-220AB Package Mechanical Data REF. DIMENSIONS Millimeters Inches Min. Max. Min. Max. 4.40 4.60 0.173 0.181 1.23 1.32 0.048 0.051 2.40 2.72 0.094 0.107 0.49 0.70 0.019 0.027 0.61 0.88 0.024 0.034 1.14 1.70 0.044 0.066 1.14 1.70 0.044 0.066 4.95 5.15 0.194 0.202 2.40 2.70 0.094 0.106 10 10.40 0.393 0.409 16.4 typ. 0.645 typ. 13 14 0.511 0.551 2.65 2.95 0.104 0.116 15.25 15.75 0.600 0.620 6.20 6.60 0.244 0.259 3.50 3.93 0.137 0.154 2.6 typ. 0.102 typ. 3.75 3.85 0.147 0.151
H2 Dia L5 C
A
L7 L6 L2 F2 F1 L9 L4 F G1 G M E D
A C D E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 M Diam.
Table 6: Ordering Information Ordering type STPS20S100CT STPS20S100CFP STPS20S100CR

Marking STPS20S100CT STPS20S100CFP STPS20S100CR
Package TO-220AB TO-220FPAB I2PAK
Weight 2.20 g 2g 1.49 g
Base qty 50 50 50
Delivery mode Tube Tube Tube
Epoxy meets UL94, V0 Cooling method: by conduction (C) Recommended torque value: 0.8 m.N. Maximum torque value: 1.0 m.N.
Table 7: Revision History Date 16-Mar-2005 Revision 1 First issue. Description of Changes
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STPS20S100C
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners (c) 2005 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com
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