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RURU80100
Data Sheet January 2000 File Number 3375.3
80A, 1000V Ultrafast Diode
The RURU80100 is an ultrafast diode with soft recovery characteristics (trr < 125ns). It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended for use as a freewheeling/clamping diode and rectifier in a variety of switching power supplies and other power switching applications. Its low stored charge and ultrafast recovery with soft recovery characteristic minimizes ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors. Formerly developmental type TA09887.
Features
* Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . . <125ns * Operating Temperature. . . . . . . . . . . . . . . . . . . . . . .175oC * Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . .1000V * Avalanche Energy Rated * Planar Construction
Applications
* Switching Power Supplies * Power Switching Circuits * General Purpose
Ordering Information
PART NUMBER RURU80100 PACKAGE TO-218 BRAND RURU80100
Packaging
JEDEC STYLE SINGLE LEAD TO-218
ANODE
NOTE: When ordering, use the entire part number.
Symbol
K
CATHODE (FLANGE)
A
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
RURU80100 Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRRM Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRWM DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VR Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IF(AV) (TC = 60oC) Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFRM (Square Wave, 20kHz) Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFSM (Halfwave, 1 Phase, 60Hz) Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD Avalanche Energy (See Figures 7 and 8) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAVL Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TSTG, TJ 1000 1000 1000 80 160 500 180 50 -65 to 175 UNITS V V V A A A W mJ
oC
1
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RURU80100
Electrical Specifications
SYMBOL VF IF = 80A IF = 80A, TC = 150oC IR VR = 1000V VR = 1000V, TC = 150oC trr IF = 1A, dIF/dt = 100A/s IF = 80A, dIF/dt = 100A/s ta tb RJC DEFINITIONS VF = Instantaneous forward voltage (pw = 300s, D = 2%). IR = Instantaneous reverse current. trr = Reverse recovery time (See Figure 6), summation of ta + tb. ta = Time to reach peak reverse current (See Figure 6). tb = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 6). RJC = Thermal resistance junction to case. pw = pulse width. D = duty cycle. IF = 80A, dIF/dt = 100A/s IF = 80A, dIF/dt = 100A/s TC = 25oC, Unless Otherwise Specified TEST CONDITION MIN TYP 90 65 MAX 1.9 1.7 250 2 125 200 0.83 UNITS V V A mA ns ns ns ns
oC/W
Typical Performance Curves
400 1000 IR, REVERSE CURRENT (A) 175oC
IF , FORWARD CURRENT (A)
100
100
10 100oC 1.0
175oC 10 100oC 25oC
0.1 25oC
1 0 0.5 1.0 1.5 2.0 2.5 3.0 VF , FORWARD VOLTAGE (V)
0.01 0 200 400 600 800 1000 VR , REVERSE VOLTAGE (V)
FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE
FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE
2
RURU80100 Typical Performance Curves
(Continued)
175 150 t, TIME (ns) 125 100 75 50 25 0 1 10 IF , FORWARD CURRENT (A) 80 ta tb trr
IF(AV), AVERAGE FORWARD CURRENT (A)
200
100
80 DC 60 SQ. WAVE 40
20
0 25 50 75 100 125 150 175 TC, CASE TEMPERATURE (oC)
FIGURE 3. trr, ta AND tb CURVES vs FORWARD CURRENT
FIGURE 4. CURRENT DERATING CURVE
Test Circuits and Waveforms
VGE AMPLITUDE AND RG CONTROL dIF/dt t1 AND t2 CONTROL IF L
DUT RG VGE t1 t2
CURRENT SENSE + VDD 0
IF
dIF dt ta
trr tb
IGBT
-
0.25 IRM IRM
FIGURE 5. trr TEST CIRCUIT
I = 1.6A L = 40mH R < 0.1 EAVL = 1/2LI2 [VR(AVL) /(VR(AVL) - VDD)] Q1 = IGBT (BVCES > DUT VR(AVL)) L CURRENT SENSE Q1 VDD DUT R + VDD IV
FIGURE 6. trr WAVEFORMS AND DEFINITIONS
VAVL
IL
IL
t0 t1 t2 t
FIGURE 7. AVALANCHE ENERGY TEST CIRCUIT
FIGURE 8. AVALANCHE CURRENT AND VOLTAGE WAVEFORMS
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site www.intersil.com 3

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