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VISHAY
IL420/ IL4208
Vishay Semiconductors
Optocoupler, Phototriac Output, High dV/dt, Low Input Current
Features
High input sensitivity IFT = 2.0 mA 600/800 V blocking voltage 300 mA on-state current High static dV/dt 10 kV/s Inverse parallel SCRs provide commutating dV/dt > 10 kV/s * Very low leakage < 10 A * Isolation Test Voltage 5300 VRMS * Small 6-pin DIP package * * * * *
A1 C2 NC 3 6 MT2 5 NC 4 MT1
i179035
Agency Approvals
* * * * UL - File No. E52744 System Code H or J CSA -93751 BABT/ BSI IEC60950 IEC60965 DIN EN 60747-5-2(VDE0884) DIN EN 60747-5-5 pending Available with Option 1
Applications
Solid-state relays Industrial controls Office equipment Consumer appliances.
dt of greater than 10 kV/s. This clamp circuit has a MOSFET that is enhanced when high dV/dt spikes occur between MT1 and MT2 of the TRIAC. When conducting, the FET clamps the base of the phototransistors, disabling the firs stage SCR predriver The 600/800 V blocking voltage permits control of offline voltages up to 240 VAC, with a safety factor of more than two, and is sufficient for as much as 380 VAC. The IL420/ IL4208 isolates low-voltage logic from 120, 240, and 380 VAC lines to control resistive, inductive, or capacitive loads including motors, solenoids, high current thyristors or TRIAC and relays.
Order Information Description
The IL420/ IL4208 consists of a GaAs IRLED optically coupled to a photosensitive non-zero crossing TRIAC network. The TRIAC consists of two inverse parallel connected monolithic SCRs. These three semiconductors are assembled in a six pin dual in-line package. High input sensitivity is achieved by using an emitter follower phototransistor and a cascaded SCR predriver resulting in an LED trigger current of less than 2.0 mA (DC) The IL420/ IL4208 used two discrete SCRs resulting in a commutating dV/dt of greater than 10 k/s. The use of a proprietary dV/dt clam results in a static dV/
IL420 IL4208 IL420-X006 IL420-X007 IL420-X009 IL4208-X007 IL4208-X009 Part Remarks 600 V VDRM, DIP-6 800 V VDRM, DIP-6 600 V VDRM, DIP-6 400 mil (option 6) 600 V VDRM, SMD-6 (option 7) 600 V VDRM, SMD-6 (option 9) 800 V VDRM, SMD-6 (option 7) 800 V VDRM, SMD-6 (option 9)
For additional information on the available options refer to Option Information.
Document Number 83629 Rev. 1.4, 26-Apr-04
www.vishay.com 1
IL420/ IL4208
Vishay Semiconductors Absolute Maximum Ratings
VISHAY
Tamb = 25 C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Parameter Reverse voltage Forward current Surge current Power dissipation Derate from 25 C Test condition Symbol VR IF IFSM Pdiss Value 6.0 60 2.5 100 1.33 Unit V mA A mW mW/C
Output
Parameter Peak off-state voltage RMS on-state current Single cycle surge current Power dissipation Derate from 25 C Test condition Part IL420 IL4208 Symbol VDRM VDRM ITM ITSM Pdiss Value 600 800 300 3.0 500 6.6 Unit V V mA A mW mW/C
Coupler
Parameter Isolation test voltage 1) Pollution degree (DIN VDE 0109) Creepage distance Clearance Comparative tracking 2) Isolation resistance VIO = 500 V, Tamb = 25 C VIO = 500 V, Tamb = 100 C Storage temperature range Ambient temperature range Soldering temperature
1) 2)
Test condition t = 1.0 sec.
Symbol VISO
Value 5300 2 7.0 7.0 175
Unit VRMS
mm mm C C C
RIO RIO Tstg Tamb
1012 10
11
- 55 to + 150 - 55 to + 100 260
max. 10 sec. dip soldering 0.5 mm from case bottom
Tsld
between emitter and detector, climate per DIN 50014, part 2, Nov. 74 index per DIN IEC 60112/VDE 0303 part 1, group IIIa per DIN VDE 6110
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Document Number 83629 Rev. 1.4, 26-Apr-04
VISHAY
Electrical Characteristics
IL420/ IL4208
Vishay Semiconductors
Tamb = 25 C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Parameter Forward voltage Reverse current Input capacitance Thermal resistance, junction to ambient Test condition IF = 10 mA VR = 6.0 V VF = 0 V, f = 1.0 MHz Symbol VF IR CIN Rthja Min Typ. 1.16 0.1 40 750 Max 1.35 10 Unit V A pF C/W
Output
Parameter Off-state voltage Test condition ID(RMS) = 70 A ID(RMS) = 70 A Repetitive peak off-state voltage IDRM = 100 s Off-state current On-state voltage On-current Surge (Non-repetitive) on-state current Holding current Latching current LED trigger current Trigger current temperature gradient Critical state of rise off-state voltage Critical rate of rise of voltage at current commutation VD = 0.67 VDRM, TJ = 25 C VD = 0.67 VDRM, TJ = 80 C VD = 0.67 VDRM, dI/dtcrq 15 A/ms , TJ = 25 C VD = 0.67 VDRM, dI/dtcrq 15 A/ms , TJ = 80 C Critical state of rise of on-state current Thermal resistance, junction to ambient VT = 2.2 V VAK = 5.0 V VD = VDRM,, TA = 100 C IT = 300 mA PF = 1.0, VT(RMS) = 1.7 V f = 50 Hz Part IL420 IL4208 IL420 IL4208 Symbol VD(RMS) VD(RMS) VDRM VDRM IBD VTM ITM ITSM IH IL IFT IFT/Tj dV/dtcr dV/dtcr dV/dtcrq dV/dtcrq dI/dtcr Rthja 1000 5000 10000 5000 8.0 150 65 5.0 1.0 7.0 2.0 14 A/C V/s V/s V/s V/s A/s C/W Min 424 565 600 800 10 1.7 100 30 300 3.0 500 Typ. 460 Max Unit V V V V A V mA A A mA
Coupler
Parameter Critical rate of rise of coupled input/output voltage Capacitance (input-output) Isolation resistance Test condition IT = 0 A, VRM = VDM = VD(RMS) f = 1.0 MHz, VIO = 0 V VIO = 500, TA = 25 C VIO = 500, TA = 100 C Symbol dV/dt CIO RIO RIO 10
12
Min
Typ. 500 0.8
Max
Unit V/s pF
1011
Document Number 83629 Rev. 1.4, 26-Apr-04
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IL420/ IL4208
Vishay Semiconductors Switching Characteristics
Parameter Turn-on time Test condition VRM = VDM = VD(RMS) PF = 1.0, IT = 300 mA Symbol ton toff Min Typ. 35 50 Max
VISHAY
Unit s s
Typical Characteristics (Tamb = 25 C unless otherwise specified)
1.4 1.3
VF - Forward Voltage - V
150
Ta = -55C
LED - LED Power - mW
1.2 1.1 1.0 0.9 0.8 0.7 .1 1 10 IF - Forward Current - mA 100 Ta = 85C Ta = 25C
100
50
0 -60
iIL420_03
-40
iIL420_01
-20 0 20 40 60 Ta - Ambient Temperature - C
80
100
Fig. 1 Forward Voltage vs. Forward Current
Fig. 3 Maximum LED Power Dissipation
10000
If(pk) - Peak LED Current - mA
Duty Factor .005 .01 .02 .05 .1 .2 .5
1000
t DF =/t
IT = f(VT), parameter: Tj
100
10 10 -6
iIL420_02
10 -5
10 -4 10 -3 10 -2 10 -1 t -LED Pulse Duration -s
10 0
101
iIL420_04
Fig. 2 Peak LED Current vs. Duty Factor, Tau
Fig. 4 Typical Output Characteristics
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Document Number 83629 Rev. 1.4, 26-Apr-04
VISHAY
IL420/ IL4208
Vishay Semiconductors
ITRMS=f(TA), RthJA=150 K/W Device switch soldered in pcb or base plate.
ID=f (Tj), VD=600 V, parameter: Tj
iIL420_05
iIL420_08
Fig. 5 Current Reduction
Fig. 8 Typical Off-State Current
for 40 to 60 Hz line operation, Ptot=f(ITRMS)
ITRMS=f(TPIN5), RthJ-PIN5=16.5 K/W Thermocouple measurement must be performed potentially separated to A1 and A2. Measuring junction as near as possible at the case.
iIL420_06
iIL420_09
Fig. 6 Current Reduction
Fig. 9 Power Dissipation
tgd=f (IFIFT25C), VD=200 V, parameter: Tj
IFTN=f (tpIF)IFTN normalized to IFT, referring to tpIF)I1.0 ms, VOP=200 V, f=40 to 60 Hz typ.
iIL420_07
iIL420_10
Fig. 7 Typical Trigger Delay Time
Fig. 10 Pulse Trigger Current
Document Number 83629 Rev. 1.4, 26-Apr-04
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IL420/ IL4208
Vishay Semiconductors Package Dimensions in Inches (mm)
VISHAY
3 .248 (6.30) .256 (6.50)
2
1
pin one ID
ISO Method A
4
5
6
.335 (8.50) .343 (8.70) .039 (1.00) Min. .048 (1.22) .052 (1.32) .130 (3.30) .150 (3.81) 18 .033 (0.84) typ. .033 (0.84) typ. .100 (2.54) typ 3-9 .008 (.20) .012 (.30) .300-.347 (7.62-8.81) .130 (3.30) .150 (3.81) .300 (7.62) typ.
4 typ . .018 (0.46) .020 (0.51)
i178014
Option 6
.407 (10.36) .391 (9.96) .307 (7.8) .291 (7.4) .028 (0.7) MIN.
Option 7
.300 (7.62) TYP .
Option 9
.375 (9.53) .395 (10.03) .300 (7.62) ref.
.180 (4.6) .160 (4.1) .0040 (.102)
.315 (8.0) MIN. .014 (0.35) .010 (0.25) .400 (10.16) .430 (10.92) .331 (8.4) MIN. .406 (10.3) MAX.
.0098 (.249)
.020 (.51) .040 (1.02)
.012 (.30) typ.
.315 (8.00) min.
15 max.
18450
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Document Number 83629 Rev. 1.4, 26-Apr-04
VISHAY
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements.
IL420/ IL4208
Vishay Semiconductors
2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 83629 Rev. 1.4, 26-Apr-04
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