View IRFI3710_356100.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

PD - 9.1387B
PRELIMINARY Advanced Process Technology Isolated Package l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description
l l
IRFI3710
HEXFET(R) Power MOSFET
D
VDSS = 100V
G S
RDS(on) = 0.025 ID = 32A
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The Fullpak is mounted to a heatsink using a single clip or by a single screw fixing.
TO-220 FULLPAK
Absolute Maximum Ratings
Parameter
ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw
Max.
32 23 180 63 0.42 20 530 28 6.3 5.0 -55 to + 175 300 (1.6mm from case ) 10 lbf*in (1.1N*m)
Units
A W W/C V mJ A mJ V/ns C
Thermal Resistance
Parameter
RJC RJA Junction-to-Case Junction-to-Ambient
Typ.
--- ---
Max.
2.4 65
Units
C/W 3/16/98
IRFI3710
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss C
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Drain to Sink Capacitance
Min. 100 --- --- 2.0 20 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- ---
Typ. --- 0.12 --- --- --- --- --- --- --- --- --- --- 14 59 58 48 4.5 7.5 3000 640 330 12
Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 0.025 VGS = 10V, ID = 16A 4.0 V VDS = VGS, ID = 250A --- S VDS = 25V, ID = 28A 25 VDS = 100V, VGS = 0V A 250 VDS = 80V, VGS = 0V, TJ = 150C 100 VGS = 20V nA -100 VGS = -20V 190 ID = 28A 26 nC VDS = 80V 82 VGS = 10V, See Fig. 6 and 13 --- VDD = 50V --- ID = 28A ns --- RG = 2.5 --- RD = 1.7, See Fig. 10 Between lead, --- 6mm (0.25in.) nH G from package --- and center of die contact --- VGS = 0V --- VDS = 25V pF --- = 1.0MHz, See Fig. 5 --- = 1.0MHz
D
S
Source-Drain Ratings and Characteristics
IS
ISM
VSD trr Qrr ton Notes:
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time
Min. Typ. Max. Units
Conditions D MOSFET symbol 32 --- --- showing the A G integral reverse --- --- 180 p-n junction diode. S --- --- 1.3 V TJ = 25C, IS = 16A, VGS = 0V --- 210 320 ns TJ = 25C, IF = 28A --- 1.7 2.6 C di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Pulse width 300s; duty cycle 2%. t=60s, =60Hz
Uses IRF3710 data and test conditions
VDD = 25V, starting TJ = 25C, L = 1.4mH
RG = 25, IAS = 28A. (See Figure 11)
ISD 28A, di/dt 460A/s, VDD V(BR)DSS,
TJ 175C
IRFI3710
1000
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
1000
I , D rain-to-S ource C urrent (A ) D
100
I , D rain-to-S ource C urrent (A ) D
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
100
4.5V
10
10
4.5V
1 0.1 1
20 s P U LS E W ID TH TC = 25C
10 100
A
1 0.1
20 s P U LS E W ID TH T C = 175C
1 10
A
100
V D S , D rain-to-S ource V oltage (V )
V D S , D rain-to-S ource V oltage (V )
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
3.0
R D S (on ) , D rain-to-S ource O n R esistance (N orm alized)
I D = 46A
I D , D ra in -to-S o urc e C urren t (A )
2.5
T J = 2 5 C
100
2.0
T J = 1 7 5 C
1.5
10
1.0
0.5
1 4 5 6 7
VDS = 50V 2 0 s P U L S E W ID T H
8 9 10
A
0.0 -60 -40 -20 0 20 40 60 80
V G S = 10V
100 120 140 160 180
A
V G S , G a te -to -S o u rc e V o lta g e (V )
T J , Junction T em perature (C )
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
IRFI3710
6000
5000
V G S , G ate-to-S ource V oltage (V )
V GS C iss C rss C oss
= = = =
0V , f = 1M H z C gs + C gd , C ds S H O R TE D C gd C ds + C gd
20
I D = 28 A V D S = 80V V D S = 50V V D S = 20V
16
C , C apacitanc e (pF )
C is s
4000
12
3000
C os s
2000
8
C rs s
1000
4
0 1 10 100
A
0 0 40 80
FO R TE S T C IR C U IT S E E FIG U R E 13
120 160 200
A
V D S , D rain-to-S ource V oltage (V )
Q G , Total G ate C harge (nC )
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
1000
1000
I S D , R everse D rain C urrent (A )
O P E R A TIO N IN TH IS A R E A LIM ITE D B Y R D S (on)
I D , D rain C urrent (A )
100
10 s 100
T J = 17 5C T J = 25C
10
100 s
10
1m s
10m s
1 0.4 0.8 1.2 1.6
V G S = 0V
A
1 1
T C = 25C T J = 175C S ingle P ulse
10 100
2.0
A
1000
V S D , S ource-to-D rain V oltage (V )
V D S , D rain-to-S ource V oltage (V )
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
IRFI3710
35
VDS
30
RD
VGS RG
D.U.T.
+
I D , Drain Current (A)
25
-VDD
20
10V
Pulse Width 1 s Duty Factor 0.1 %
15
10
Fig 10a. Switching Time Test Circuit
VDS 90%
5
0 25 50 75 100 125 150 175
TC , Case Temperature ( C)
Fig 9. Maximum Drain Current Vs. Case Temperature
10% VGS
td(on) tr t d(off) tf
Fig 10b. Switching Time Waveforms
10
Thermal Response (Z thJC )
1
D = 0.50 0.20 0.10 0.05
0.1 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) P DM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 10
0.01
0.001 0.00001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
IRFI3710
1200
E A S , S ingle P ulse A valanc he E nergy (m J)
TO P
1000
15V
B O TTO M
ID 11A 20A 28 A
VDS
L
D R IV E R
800
600
RG
20V
D .U .T
IA S tp
+ V - DD
A
400
0 .01
Fig 12a. Unclamped Inductive Test Circuit
200
0
V D D = 25V
25 50 75 100 125 150
A
175
V (B R )D S S tp
S tarting T J , Junction T em perature (C )
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
IAS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
50K
QG
12V
.2F .3F
10 V
QGS VG QGD
VGS
3mA
D.U.T.
+ V - DS
Charge
IG
ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
IRFI3710
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
-
+
RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
+ VDD
Driver Gate Drive P.W. Period D=
P.W. Period VGS=10V
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
VDD
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
* VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS
IRFI3710
Package Outline
TO-220 Fullpak Outline Dimensions are shown in millimeters (inches)
10.60 (.417) 10.40 (.409) o 3.40 (.133) 3.10 (.123) -A3.70 (.145) 3.20 (.126) 4.80 (.189) 4.60 (.181) 2.80 (.110) 2.60 (.102) LE A D A S S IG N ME N TS 1 - G A TE 2 - D R A IN 3 - SOURCE
7.10 (.280) 6.70 (.263)
16.00 (.630) 15.80 (.622)
1.15 (.045) M IN . 1 2 3
NOTES: 1 D IME N S IO N IN G & TO LE R A N C IN G P E R A N S I Y 14.5M , 1982 2 C O N TR O LLIN G D IM E N S IO N : IN C H .
3.30 (.130) 3.10 (.122) -B13.70 (.540) 13.50 (.530) C D
A 1.40 (.055) 3X 1.05 (.042) 2.54 (.100) 2X 0.90 (.035) 3X 0.70 (.028) 0.25 (.010) M AM B 3X 0.48 (.019) 0.44 (.017)
B
2.85 (.112) 2.65 (.104)
M IN IM U M C R E E P A G E D IS TA N C E B E TW E E N A -B -C -D = 4.80 (.189)
Part Marking Information
TO-220 Fullpak
E X AE X A M P: L E : IS HIS A N AIR F IR0F I8 4 0 G MPLE TH T IS IS N 1 1 0 W ITH ITH S E M B L Y L Y W AS ASSEMB L O TL O T D E D E 1E 4 0 1 CO CO 9B M
A
IN TE R N A T IO N A L IN T E R N A T IO N A L R E C TIF IE R IR FF I81 0 G R E C T IF IE R IR 1 0 4 0 LOGO 9246 LOGO 9 B 40 1 1 M E 92 45 A S S E MML Y Y ASSE B BL L OT T COO DE LO CDE
P A R T N U M B E RA PART NUMBER
D A TE C O D E (Y Y W E ) O D E DAT W C Y(Y Y=W Y E)A R Y W YY = W AR W W = YE E E K W W = W EEK
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 3/98

▲Up To Search▲

Price & Availability of IRFI3710

	To Download IRFI3710 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .