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MICROWAVE CORPORATION v02.0704 HMC464 GaAs PHEMT MMIC POWER AMPLIFIER, 2.0 - 20.0 GHz Features +26 dBm P1dB Output Power Gain: 16 dB +30 dBm Output IP3 Supply Voltage: +8.0V @ 290 mA 50 Ohm Matched Input/Output 3.12 mm x 1.63 mm x 0.1 mm 1 AMPLIFIERS - CHIP Typical Applications The HMC464 wideband driver is ideal for: * Telecom Infrastructure * Microwave Radio & VSAT * Military & Space * Test Instrumentation * Fiber Optics Functional Diagram General Description The HMC464 is a GaAs MMIC PHEMT Distributed Power Amplifier die which operates between 2 and 20 GHz. The amplifier provides 16 dB of gain, +30 dBm Output IP3 and +26 dBm of output power at 1 dB gain compression while requiring 290 mA from a +8V supply. Gain flatness is excellent from 2 - 18 GHz making the HMC464 ideal for EW, ECM and radar driver amplifier applications. The HMC464 amplifier I/O's are internally matched to 50 Ohms facilitating easy integration into MultiChip-Modules (MCMs). All data is with the chip in a 50 Ohm test fixture connected via 0.025mm (1 mil) diameter wire bonds of minimal length 0.31mm (12 mils). Electrical Specifications, TA = +25 C, Vdd= 8V, Vgg2= 3V, Idd= 290 mA* Parameter Frequency Range Gain Gain Flatness Gain Variation Over Temperature Input Return Loss Output Return Loss Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept (IP3) Noise Figure Supply Current (Idd) (Vdd= 8V, Vgg1= -0.5V Typ.) 23.5 14 Min. Typ. 2.0 - 6.0 16 0.25 0.02 15 14 26.5 28 32 4.0 290 22 0.03 13 Max. Min. Typ. 6.0 - 18.0 16 0.5 0.02 17 12 26 27.5 30 4.0 290 19 0.03 11 Max. Min. Typ. 18.0 - 20.0 14 0.75 0.03 13 11 22 24.5 24 6.0 290 0.04 Max. Units GHz dB dB dB/ C dB dB dBm dBm dBm dB mA * Adjust Vgg1 between -2 to 0V to achieve Idd= 290 mA typical. 1 - 106 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com v02.0704 MICROWAVE CORPORATION HMC464 GaAs PHEMT MMIC POWER AMPLIFIER, 2.0 - 20.0 GHz GaAs MMIC PUMPED MIXER Gain & Return LossSUB-HARMONICALLY Gain vs. Temperature 20 15 10 RESPONSE (dB) 5 0 -5 -10 -15 -20 -25 -30 0 2 4 6 8 10 12 14 16 18 20 22 24 FREQUENCY (GHz) S21 S11 S22 17 - 25 GHz 20 18 16 1 AMPLIFIERS - CHIP 1 - 107 14 GAIN (dB) 12 10 8 6 4 2 0 0 2 4 6 8 10 12 14 16 18 20 22 FREQUENCY (GHz) +25C +85C -55C Input Return Loss vs. Temperature 0 INPUT RETURN LOSS (dB) -5 -10 -15 -20 -25 -30 0 2 4 6 8 10 12 14 16 18 20 22 FREQUENCY (GHz) +25C +85C -55C Output Return Loss vs. Temperature 0 OUTPUT RETURN LOSS (dB) +25C +85C -55C -5 -10 -15 -20 -25 0 2 4 6 8 10 12 14 16 18 20 22 FREQUENCY (GHz) Reverse Isolation vs. Temperature 0 REVERSE ISOLATION (dB) -10 -20 -30 -40 -50 -60 -70 0 2 4 6 8 10 12 14 16 18 20 22 FREQUENCY (GHz) +25C +85C -55C Noise Figure vs. Temperature 10 9 8 NOISE FIGURE (dB) 7 6 5 4 3 2 1 0 0 2 4 6 8 10 12 14 16 18 20 22 FREQUENCY (GHz) +25C +85C -55C For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com v02.0704 MICROWAVE CORPORATION HMC464 GaAs PHEMT MMIC POWER AMPLIFIER, 2.0 - 20.0 GHz 1 AMPLIFIERS - CHIP GaAs MMIC SUB-HARMONICALLY Psat vs. Temperature PUMPED MIXER P1dB vs. Temperature 30 28 26 24 P1dB (dBm) 22 20 18 16 14 12 10 0 2 4 6 8 10 12 14 16 18 20 22 FREQUENCY (GHz) +25C +85C -55C 17 - 25 GHz 30 28 26 24 Psat (dBm) 22 20 18 16 14 12 10 0 2 4 6 8 10 12 14 16 18 20 22 FREQUENCY (GHz) +25C +85C -55C Output IP3 vs. Temperature 36 34 32 30 OIP3 (dBm) 28 26 24 22 20 18 16 0 2 4 6 8 10 12 14 16 18 20 22 FREQUENCY (GHz) +25C +85C -55C Gain, Power & OIP3 vs. Supply Voltage @ 10 GHz, Fixed Vgg GAIN (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm) 32 30 28 26 24 22 20 18 16 14 12 10 7.5 8 Vdd SUPPLY VOLTAGE (Vdc) 8.5 Gain P1dB Psat OIP3 Absolute Maximum Ratings Drain Bias Voltage (Vdd) Gate Bias Voltage (Vgg1) Gate Bias Voltage (Vgg2) RF Input Power (RFin)(Vdd = +8.0 Vdc) Channel Temperature Continuous Pdiss (T= 85 C) (derate 51.5 mW/C above 85 C) Thermal Resistance (channel to die bottom) Storage Temperature Operating Temperature +9.0 Vdc -2.0 to 0 Vdc (Vdd -8.0) Vdc to Vdd +23 dBm 175 C 4.64 W 19.4 C/W -65 to +150 C -55 to +85 C Typical Supply Current vs. Vdd Vdd (V) +7.5 +8.0 +8.5 Idd (mA) 292 290 288 1 - 108 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com v02.0704 MICROWAVE CORPORATION HMC464 GaAs PHEMT MMIC POWER AMPLIFIER, 2.0 - 20.0 GHz Outline Drawing 1 AMPLIFIERS - CHIP NOTES: 1. ALL DIMENSIONS IN INCHES [MILLIMETERS] 2. NO CONNECTION REQUIRED FOR UNLABELED BOND PADS 3. DIE THICKNESS IS 0.004 (0.100) 4. TYPICAL BOND PAD IS 0.004 (0.100) SQUARE 5. BACKSIDE METALLIZATION: GOLD 6. BACKSIDE METAL IS GROUND 7. BOND PAD METALIZATION: GOLD Pad Descriptions Pad Number 1 Function RFIN Description This pad is AC coupled and matched to 50 Ohms from 2.0 - 20.0 GHz Interface Schematic 2 Vgg2 Gate Control 2 for amplifier. +3V should be applied to Vgg2 for nominal operation. 3 RFOUT & Vdd RF output for amplifier. Connect the DC bias (Vdd) network to provide drain current (Idd). See application circuit herein. 4 Vgg1 Gate Control 1 for amplifier. Adjust between -2 to 0V to achieve Idd= 290 mA. Die Bottom GND Die bottom must be connected to RF/DC ground. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 1 - 109 v02.0704 MICROWAVE CORPORATION HMC464 GaAs PHEMT MMIC POWER AMPLIFIER, 2.0 - 20.0 GHz 1 AMPLIFIERS - CHIP Assembly Diagram Application Circuit NOTE 1: Drain Bias (Vdd) must be applied through a broadband bias tee or external bias network. 1 - 110 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com v02.0704 MICROWAVE CORPORATION HMC464 GaAs PHEMT MMIC POWER AMPLIFIER, 2.0 - 20.0 GHz Mounting & Bonding Techniques for Millimeterwave GaAs MMICs The die should be attached directly to the ground plane with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). Microstrip substrates should brought as close to the die as possible in order to minimize bond wire length. Typical die-tosubstrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). 1 AMPLIFIERS - CHIP 1 - 111 Handling Precautions Follow these precautions to avoid permanent damage. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: Follow ESD precautions to protect against > 250V ESD strikes. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. Mounting The chip is back-metallized and can be die mounted with electrically conductive epoxy. The mounting surface should be clean and flat. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer's schedule. Wire Bonding Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of 150 deg. C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31mm (12 mils). For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com |
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