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| STN4NF03L N-CHANNEL 30V - 0.039 - 6.5A SOT-223 STripFETTM II POWER MOSFET TYPE STN4NF03L s s VDSS 30V RDS(on) <0.05 ID 6.5A 2 TYPICAL RDS(on) = 0.039 LOW THRESHOLD DRIVE 1 2 3 DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique "Single Feature SizeTM" stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. SOT-223 INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s DC-DC & DC-AC CONVERTERS s DC MOTOR CONTROL (DISK DRIVES, etc.) s SYNCHRONOUS RECTIFICATION ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM ( ) PTOT EAS (1) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuous) at TC = 25C Drain Current (continuous) at TC = 100C Drain Current (pulsed) Total Dissipation at TC = 25C Derating Factor Single Pulse Avalanche Energy Storage Temperature Operating Junction Temperature Value 30 30 16 6.5 4.5 26 3.3 0.026 200 -55 to 175 (1) Starting Tj=25C, ID=6.5A, VDD=15V Unit V V V A A A W W/C mJ C (q) Pulse width limited by safe operating area December 2002 1/8 STN4NF03L THERMAL DATA Rthj-PCB Rthj-PCB Tl Thermal Resistance Junction-PC Board Max (*) Thermal Resistance Junction-PCB Max (**) Maximum Lead Temperature For Soldering Purpose (1.6 mm from case for 10s) 2 38 100 260 C/W C/W C Note: (*) When mounted on 1 in FR-4 board , 2 oz Cu, t<10s. Note: (**) Minimum recommended footprint ELECTRICAL CHARACTERISTICS (TCASE = 25 C UNLESS OTHERWISE SPECIFIED) OFF Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 A, VGS = 0 VDS = Max Rating VDS = Max Rating, TC = 125 C VGS = 16V Min. 30 1 10 100 Typ. Max. Unit V A A nA ON (1) Symbol VGS(th) RDS(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance Test Conditions VDS = VGS, ID = 250 A VGS = 10 V, ID = 2 A VGS = 5 V, ID = 2 A Min. 1 0.039 0.046 0.05 0.06 Typ. Max. Unit V DYNAMIC Symbol gfs (1) Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VDS = 10 V , ID =2 A VDS = 25 V, f = 1 MHz, VGS = 0 Min. 1 Typ. 3 330 90 40 Max. Unit S pF pF pF 2/8 STN4NF03L ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VDD = 15 V, ID = 2 A RG = 4.7 VGS = 4.5 V (see test circuit, Figure 3) VDD = 24 V, ID = 4 A, VGS = 10 V Min. Typ. 11 100 6.5 3.6 2 9 Max. Unit ns ns nC nC nC SWITCHING OFF Symbol td(off) Parameter Turn-off-Delay Time Test Conditions VDD = 15 V, ID = 2 A, RG = 4.7, VGS = 4.5 V (see test circuit, Figure 3) Min. Typ. 25 Max. Unit ns tf Symbol ISD ISDM (2) VSD (1) trr Qrr IRRM Fall Time Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 6.5 A, VGS = 0 ISD = 6.5 A, di/dt = 100 A/s, VDD = 15 V, Tj = 150C (see test circuit, Figure 5) Test Conditions Min. 22 Typ. Max. 6.5 26 1.5 35 25 1.4 ns Unit A A V ns nC A SOURCE DRAIN DIODE Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. Safe Operating Area Thermal Impedence Junction-PCB 3/8 STN4NF03L Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations 4/8 STN4NF03L Normalized Gate Thereshold Voltage vs Temp. Normalized On Resistance vs Temperature Source-drain Diode Forward Characteristics 5/8 STN4NF03L Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/8 STN4NF03L SOT-223 MECHANICAL DATA mm MIN. A B B1 c D e e1 E H V A1 0.02 3.30 6.70 0.60 2.90 0.24 6.30 0.70 3.00 0.26 6.50 2.30 4.60 3.50 7.00 3.70 7.30 10o 0.130 0.264 TYP. MAX. 1.80 0.80 3.10 0.32 6.70 0.024 0.114 0.009 0.248 0.027 0.118 0.010 0.256 0.090 0.181 0.138 0.276 0.146 0.287 10o MIN. inch TYP. MAX. 0.071 0.031 0.122 0.013 0.264 DIM. P008B 7/8 STN4NF03L Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. (c) The ST logo is a registered trademark of STMicroelectronics (c) 2003 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. (c) http://www.st.com 8/8 |
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