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BUL654
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
PRELIMINARY DATA
s s
s s s
HIGH VOLTAGE CAPABILITY MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION LOW BASE-DRIVE REQUIREMENTS VERY HIGH SWITCHING SPEED FULLY CHARACTERIZED AT 125oC
APPLICATIONS s ELECTRONIC TRANSFORMER FOR HALOGEN LAMPS s SWITCH MODE POWER SUPPLIES DESCRIPTION The BUL654 is manufactured using high voltage Multi Epitaxial Planar technology for cost-effective high performance. It uses a Hollow Emitter structure to enhance switching speeds. The BUL series is designed for use in lighting applications and low cost switch-mode power supplies. TO-220
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INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V CES V CEO V EBO IC I CM IB I BM P tot T stg Tj Parameter Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (t p < 5 ms) Base Current Base Peak Current (t p < 5 ms) Total Dissipation at T c = 25 o C Storage Temperature Max. Operating Junction Temperature Value 700 400 9 12 18 6 9 80 -65 to 150 150 Unit V V V A A A A W
o o
C C
February 2003
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BUL654
THERMAL DATA
R thj-case Thermal Resistance Junction-Case Max 1.25
o
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol I CES I CEO Parameter Collector Cut-off Current (V BE = 0) Collector Cut-off Current (I B = 0) Test Conditions V CE = 700 V V CE = 700 V V CE = 400 V I C = 100 mA L = 25 mH 400 T c = 125 o C Min. Typ. Max. 50 500 100 Unit A A A V
V CEO(sus) Collector-Emitter Sustaining Voltage (I B = 0) V EBO V CE(sat) V BE(sat) h FE Emitter-Base Voltage (I C = 0) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain
I E = 10 mA IC = 2 A IC = 7 A IC = 2 A IC = 7 A IC IC IC IC = = = = 10 mA 2A 6A 12 A I B = 0.4 A I B = 1.4 A I B = 0.4 A I B = 1.4 A V CE = 2 V V CE = 2 V V CE = 2 V V CE = 5 V
9 0.15 0.35 0.85 1 15 15 7 4 0.3 0.7 1 1.2
V V V V V
Pulsed: Pulse duration = 300 s, duty cycle 1.5 %
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BUL654
TO-220 MECHANICAL DATA
DIM. A C D E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 M DIA. 3.75 13.00 2.65 15.25 6.20 3.50 2.60 3.85 0.147 mm MIN. 4.40 1.23 2.40 0.49 0.61 1.14 1.14 4.95 2.40 10.00 16.40 14.00 2.95 15.75 6.60 3.93 0.511 0.104 0.600 0.244 0.137 0.102 0.151 TYP. MAX. 4.60 1.32 2.72 0.70 0.88 1.70 1.70 5.15 2.70 10.40 MIN. 0.173 0.048 0.094 0.019 0.024 0.044 0.044 0.194 0.094 0.394 0.645 0.551 0.116 0.620 0.260 0.154 inch TYP. MAX. 0.181 0.052 0.107 0.027 0.034 0.067 0.067 0.202 0.106 0.409
P011CI
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BUL654
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 2003 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com
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