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| LAB MECHANICAL DATA Dimensions in mm (inches) SEME 2N2907ACSM HIGH SPEED, MEDIUM POWER, PNP SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS FEATURES 0.51 0.10 (0.02 0.004) 0.31 rad. (0.012) * SILICON PLANAR EPITAXIAL PNP TRANSISTOR * HERMETIC CERAMIC SURFACE MOUNT PACKAGE (SOT23 COMPATIBLE) * CECC SCREENING OPTIONS * SPACE QUALITY LEVELS OPTIONS A 2.54 0.13 (0.10 0.005) 3 2 1 1.91 0.10 (0.075 0.004) 3.05 0.13 (0.12 0.005) A= 0.31 rad. (0.012) 0.76 0.15 (0.03 0.006) * HIGH SPEED SATURATED SWITCHING 1.40 (0.055) max. 1.02 0.10 (0.04 0.004) APPLICATIONS: SOT23 CERAMIC (LCC1 PACKAGE) PAD 1 - Base Underside View PAD 2 - Emitter PAD 3 - Collector Hermetically sealed surface mount version of the popular 2N2907A for high reliability / space applications requiring small size and low weight devices. ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated) VCBO VCEO VEBO IC PD PD Rja Tstg,Tj Semelab plc. Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current Total Device Dissipation Derate above 50C Thermal Resistance Junction to Ambient Storage Temperature, Operating Temp Range Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk -60V -60V -5V 600mA 350mW 2.0mW / C 350C / W -55 to 200C Prelim.3/00 LAB ELECTRICAL CHARACTERISTICS (Tcase = 25C unless otherwise stated) Parameter VCEO(sus)* V(BR)CBO* V(BR)EBO* ICEX* ICBO* IBEO VCE(sat)* VBE(sat)* Collector - Emitter Sustaining Voltage Collector - Base Breakdown Voltage Emitter - Base Breakdown Voltage Collector Cut-off Current Collector - Base Cut-off Current Base Cut-off Current Collector - Emitter Saturation Voltage Base - Emitter Saturation Voltage SEME 2N2907ACSM Test Conditions IC = 10mA IC = 10mA IE = 10mA VCE = 30V IE = 0 TC = 125C VCE = 30V IC = 150mA IC = 500mA IC = 150mA IC = 500mA IC = 0.1mA IC = 1mA VBE = 0.5V IB = 15mA IB = 50mA IB = 15mA IB = 50mA VCE = 10V VCE = 10V VCE = 10V VCE = 10V VCE = 10V IC = 0 VBE = 0.5V VCB = 50V Min. -60 -60 -5 Typ. Max. Unit V V V 50 0.01 10 50 -0.4 -1.6 -1.3 -2.6 mA nA nA V V 75 100 100 100 50 300 -- hFE* DC Current Gain IC = 10mA IC = 150mA IC = 500mA * Pulse test tp = 300ms , d 2% DYNAMIC CHARACTERISTICS (Tcase = 25C unless otherwise stated) Parameter fT Cob Cib Transition Frequency Output Capacitance Input Capacitance Test Conditions IC = 50mA VCB = 10V VBE = 2V VCE = 20V IE = 0 IC = 0 f = 100MHz f = 1.0MHz f = 1.0MHz Min. 200 Typ. Max. Unit MHz 8 30 pF pF ELECTRICAL CHARACTERISTICS (Tcase = 25C unless otherwise stated) Parameter ton td tr toff ts tf Turn-on Time Delay Time Rise Time Turn-off Time Storage Time Fall Time Test Conditions VCC = 30V IC = 150mA IB1 = 15mA VCC = 6V IC = 150mA IB1 = IB2 = 15mA Min. Typ. 26 6.0 20 70 50 20 Max. Unit 45 10 40 100 80 30 ns ns Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Prelim.3/00 |
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