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K6L0908C2A Family
Document Title
64Kx8 bit Low Power CMOS Static RAM
CMOS SRAM
Revision History
Revision No.
0.0 0.1 1.0 2.0
History
Initial draft Revision Finalize Revision - Add 45ns part with 30pf test load. Revision - Change Data Sheet format : One data sheets for industrial and commercial product Revision - Change Data Sheet format - Remove 45ns part from commercial product and 100ns part from industrial product - Remove low power part form TSOP package
Draft Data
Novemer 28, 1993 May 13, 1994 December 1, 1994 August 12, 1995
Remark
Design target Preliminary Final Final
3.0
April 15, 1996
Final
4.0
January 9, 1998
Final
The attached data, sheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
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Revision 4.0 January 1997
K6L0908C2A Family
64Kx8 bit Low Power CMOS Static RAM
FEATURES
* Process Technology: Poly Load * Organization: 64Kx8 * Power Supply Voltage: 4.5~5.5V * Low Data Retention Voltage: 2V(Min) * Three state output and TTL Compatible * Package Type: 32-SOP-525, 32-TSOP1-0820F
CMOS SRAM
GENERAL DESCRIPTION
The K6L0908C2A families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with low data retention current.
PRODUCT FAMILY
Power Dissipation Product Family K6L0908C2A-L K6L0908C2A-B K6L0908C2A-P K6L0908C2A-F Industrial (-40~85C) Operating Temperature VCC Range Speed Standby (ISB1, Max) 100A 20A 70ns 100A 50A 70mA 32-SOP 32-TSOP1-F Operating (ICC2, Max) PKG Type
Commercial (0~70C) 4.5 to 5.5V
55/70ns
PIN DESCRIPTION
N.C N.C A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O1 I/O2 I/O3 VSS 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 VCC A15 CS2 WE A13 A8 A9 A11 OE A10 CS1 I/O8 I/O7 I/O6 I/O5 I/O4 A11 A9 A8 A13 WE CS2 A15 VCC NC NC A14 A12 A7 A6 A5 A4 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 OE A10 CS1 I/O8 I/O7 I/O6 I/O5 I/O4 VSS I/O3 I/O2 I/O1 A0 A1 A2 A3
FUNCTIONAL BLOCK DIAGRAM
Clk gen. Precharge circuit.
A3 A4 A5 A6 A7 A12 A13 A14 A15
32-SOP
25 24 23 22 21 20 19 18 17
Row select
32-TSOP Type1 - Forward
Memory array 512 rows 128x8 columns
I/O1 I/O8
Data cont
I/O Circuit Column select
Data cont
Name CS1, CS2 OE WE A0~A15 I/O1~I/O8 Vcc Vss N.C
Function Chip Select Inputs Output Enable Input Write Enable Input Address Inputs Data Inputs/Outputs Power Ground No Connection
CS1 CS2 WE OE A0 A1 A2 A8 A9 A10 A11
Control Logic
SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice.
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Revision 4.0 January 1997
K6L0908C2A Family
PRODUCT LIST
Commercial Temperature Products(0~70C) Part Name K6L0908C2A-GL55 K6L0908C2A-GB55 K6L0908C2A-GL70 K6L0908C2A-GB70 K6L0908C2A-TB55 K6L0908C2A-TB70 Function 32-SOP, 55ns, L-pwr 32-SOP, 55ns, LL-pwr 32-SOP, 70ns, L-pwr 32-SOP, 70ns, LL-pwr 32-TSOP1-F, 55ns, LL-pwr 32-TSOP1-F, 70ns, LL-pwr K6L0908C2A -TF70
CMOS SRAM
Industrial Temperature Products(-40~85C) Part Name K6L0908C2A-GP70 K6L0908C2A-GF70 Function 32-SOP, 70ns, L-pwr 32-SOP, 70ns, LL-pwr 32-TSOP1-F, 70ns, LL-pwr
FUNCTIONAL DESCRIPTION
CS1 H X1) L L L CS2 X1) L H H H OE X1) X1) H L X1) WE X1) X1) H H L I/O Pin High-Z High-Z High-Z Dout Din Mode Deselected Deselected Output Disabled Read Write Power Standby Standby Active Active Active
1. X means dont care.(Must be low or high state)
ABSOLUTE MAXIMUM RATINGS1)
Item Voltage on any pin relative to Vss Voltage on Vcc supply relative to Vss Power Dissipation Storage temperature Operating Temperature Soldering temperature and time Symbol VIN,VOUT VCC PD TSTG TA TSOLDER Ratings -0.5 to 7.0 -0.5 to 7.0 1.0 -65 to 150 0 to 70 -40 to 85 260C, 10sec(Lead Only) Unit V V W C C C Remark K6L0908C2A-C K6L0908C2A-I -
1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
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Revision 4.0 January 1997
K6L0908C2A Family
RECOMMENDED DC OPERATING CONDITIONS1)
Item Supply voltage Ground Input high voltage Input low voltage Symbol Vcc Vss VIH VIL Min 4.5 0 2.2 -0.53) Typ 5.0 0 -
CMOS SRAM
Max 5.5 0 Vcc+0.5V 0.8
2)
Unit V V V V
Note 1. Commercial Product : TA=0 to 70C, unless otherwise specified Industrial Product : TA=-40 to 85C, unless otherwise specified 2. Overshoot : V CC+3.0V in case of pulse width30ns 3. Undershoot : -3.0V in case of pulse width30ns 4. Overshoot and undershoot are sampled, not 100% tested
CAPACITANCE1)(f=1MHz, TA=25C)
Item Input capacitance Input/Output capacitance
1. Capacitance is sampled, not 100% tested
Symbol CIN CIO
Test Condition VIN=0V VIO=0V
Min -
Max 6 8
Unit pF pF
DC AND OPERATING CHARACTERISTICS
Item Input leakage current Output leakage current Operating power supply current Symbol ILI ILO ICC ICC1 Average operating current ICC2 Output low voltage Output high voltage Standby Current(TTL) Standby Current (CMOS) K6L0908C2A-L/-B ISB1 K6L0908C2A-P/-F VOL VOH ISB VIN=Vss to Vcc CS1=VIH or CS2=VIL or OE=VIH or WE=VIL, VIO=Vss to Vcc IIO=0mA, CS1=VIL, CS2=VIH, VIN=VIH or VIL Cycle time=1s, 100% duty, IIO=0mA CS10.2V, CS2VCC-0.2V, VIN0.2V or VINVcc -0.2V
Cycle time=Min, 100% duty, IIO=0mA, CS1=VIL, CS2=VIH, VIN=VIH or VIL
Test Conditions
Min -1 -1 2.4 -
Typ Max Unit 7 2 1 2 1 1 1 15 10 70 0.4 3 100 20 100 50 A A mA mA mA V V mA A A
IOL=2.1mA IOH=-1.0mA CS1=VIH, CS2=VIL, Other inputs =VIH or VIL Low Power CS1Vcc-0.2V, CS2Vcc-0.2V or CS20.2V Low Low Power Other inputs =0 ~ Vcc Low Power Low Low Power
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Revision 4.0 January 1997
K6L0908C2A Family
AC OPERATING CONDITIONS
TEST CONDITIONS( Test Load and Input/Output Reference)
Input pulse level : 0.8 to 2.4V Input rising and falling time : 5ns Input and output reference voltage :1.5V Output load(see right) : CL=100pF+1TTL
CMOS SRAM
CL1)
1. Including scope and jig capacitance
AC CHARACTERISTICS (Vcc=4.5~5.5V,
Parameter List
K6L0908C2A-C Family:TA=0 to 70C, K6L0908C2A-I Family:TA=-40 to 85C) Speed Bins Symbol Min 55ns Max 55 55 25 20 20 20 Min 70 10 5 0 0 10 70 60 0 60 50 0 0 30 0 5 70ns Max 70 70 35 25 25 25 ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns Units
Read cycle time Address access time Chip select to output Output enable to valid output Read Chip select to low-Z output Output enable to low-Z output Chip disable to high-Z output Output disable to high-Z output Output hold from address change Write cycle time Chip select to end of write Address set-up time Address valid to end of write Write Write pulse width Write recovery time Write to output high-Z Data to write time overlap Data hold from write time End write to output low-Z
tRC tAA tCO1, tCO2 tOE tLZ tOLZ tHZ tOHZ tOH tWC tCW tAS tAW tWP tWR tWHZ tDW tDH tOW
55 10 5 0 0 10 55 45 0 45 40 0 0 25 0 5
DATA RETENTION CHARACTERISTICS
Item Vcc for data retention VDR K6L0908C2A-L/-B Data retention current IDR K6L0908C2A-P/-F Data retention set-up time tSDR Recovery time tRDR Vcc=3.0V CS1Vcc-0.2V CS2Vcc-0.2V or CS20.2V Symbol
1)
Test Condition CS1 Vcc-0.2V L-Ver LL-Ver L-Ver LL-Ver
Min 2.0 0 5
Typ 1 0.5 -
Max 5.5 50 10 50 25 -
Unit V
A
See data retention waveform
ms
1. CS1Vcc-0.2V, CS2Vcc-0.2V( CS1 controlled) or CS20.2V(CS2 controlled).
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Revision 4.0 January 1997
K6L0908C2A Family
TIMMING DIAGRAMS
TIMING WAVEFORM OF READ CYCLE(1) (Address Controlled, CS1=OE=VIL, WE=VIH)
tRC Address tOH Data Out Previous Data Valid tAA
CMOS SRAM
Data Valid
TIMING WAVEFORM OF READ CYCLE(2) (WE=VIH)
tRC Address tAA tCO1 CS1 tHZ(1,2) CS2 tCO2 tOE tOH
OE tOLZ tLZ Data Valid tOHZ
Data out
NOTES (READ CYCLE)
High-Z
1. tHZ and tOHZ are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output voltage levels. 2. At any given temperature and voltage condition, tHZ(Max.) is less than tLZ(Min.) both for a given device and from device to device interconnection.
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Revision 4.0 January 1997
K6L0908C2A Family
TIMING WAVEFORM OF WRITE CYCLE(1) (WE Controlled)
tWC Address tCW(2) CS1 tAW CS2 tCW(2) tWP(1) WE tAS(3) Data in tWHZ Data out Data Undefined tDW Data Valid tOW tDH tWR(4)
CMOS SRAM
TIMING WAVEFORM OF WRITE CYCLE(2) (CS1
Controlled)
tWC Address tAS(3) CS1 tAW CS2 tWP(1) WE tDW Data in Data Valid tDH tCW(2) tWR(4)
Data out
High-Z
High-Z
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Revision 4.0 January 1997
K6L0908C2A Family
TIMING WAVEFORM OF WRITE CYCLE(3)
(CS2 Controlled)
CMOS SRAM
tWC Address tAS(3) CS1 tAW CS2 tCW(2) tWP(1) tDW Data in Data Valid tDH tCW(2) tWR(4)
WE
Data out
NOTES (WRITE CYCLE)
High-Z
High-Z
1. A write occurs during the overlap of a low CS1, a high CS2 and a low WE. A write begins at the latest transition among CS1 goes low, CS2 going high and WE going low : A write end at the earliest transition among CS1 going high, CS2 going low and WE going high, tWP is measured from the begining of write to the end of write. 2. tCW is measured from the CS1 going low or CS2 going high to the end of write. 3. tAS is measured from the address valid to the beginning of write. 4. tWR is measured from the end of write to the address change. tWR(1) applied in case a write ends as CS1 or WE going high tWR(2) applied in case a write ends as CS2 going to low.
DATA RETENTION WAVE FORM
CS1 controlled
VCC 4.5V tSDR Data Retention Mode tRDR
2.2V VDR CS1VCC - 0.2V
CS1 GND
CS2 controlled
VCC 4.5V CS2 tSDR
Data Retention Mode
tRDR
VDR 0.4V GND CS20.2V
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Revision 4.0 January 1997
K6L0908C2A Family
PACKAGE DIMENSIONS
32 PIN SMALL OUTLINE PACKAGE (525mil)
CMOS SRAM
Units: millimeter(Inch)
#32
#17
0~8
11.430.20 0.4500.008
#1 20.87 MAX 0.822 20.470.20 0.8060.008
#16 2.740.20 0.1080.008 3.00 0.118 MAX 0.20 +0.10 -0.05 0.008+0.004 -0.002 0.800.20 0.0310.008
0.10 MAX 0.004 MAX
+0.100 -0.050 +0.004 0.016 -0.002
( 0.71 ) 0.028
0.41
1.27 0.050
0.05 MIN 0.002
32-THIN SMALL OUTLINE PACKAGE TYPE I (0820F)
0.20
+0.10 -0.05 0.008+0.004 -0.002
20.000.20 0.7870.008 #32 ( 8.00 0.315 0.25 ) 0.010
#1
MAX 8.40 0.331
0.50 0.0197
#16
#17
1.000.10 0.0390.004 1.20 0.047 MAX
13.34 0.525
14.120.30 0.5560.012
0.05 0.002 MIN
0.25 0.010 TYP
18.400.10 0.7240.004
0~8
0.45 ~0.75 0.018 ~0.030
(
0.50 ) 0.020
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Revision 4.0 January 1997
0.10 MAX 0.004 MAX
+0.10 -0.05 0.006+0.004 -0.002
0.15

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