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| Ordering number : ENN6590 CPH5506 PNP/NPN Epitaxial Planar Silicon Transistors CPH5506 DC / DC Converter Applications Applications * Package Dimensions unit : mm 2186 [CPH5506] 2.9 0.2 0.05 0.15 Relay drivers, Lamp drivers, Motor drivers. Features * * * Composite type with a PNP transistor and an NPN transistor contained in one package, facilitating high-density mounting. The CPH5506 consists of two chips encapsulated in a package which are equivalent to the CPH3115 and the CPH3215, respectively. Ultrasmall package facilitate miniaturization in end products. (0.9mm mounting height) 5 4 3 0.6 1 0.95 2 0.4 0.6 1.6 2.8 0.4 1 : Collector(NPN TR) 2 : Collector(PNP TR) 3 : Base(PNP TR) 4 : Common Emitter 5 : Base(NPN TR) SANYO : CPH5 0.2 Specifications ( ):PNP Absolute Maximum Ratings at Ta=25C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Total Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC PT Tj Tstg Mounted on a ceramic board (600mm2!0.8mm) Mounted on a ceramic board (600mm2!0.8mm) Conditions 0.7 0.9 Ratings (--30)40 (--)30 (--)5 (--)1.5 (--)5 (--)300 0.9 1.2 150 --55 to +150 Unit V V V A A mA W W C C Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 71400 TS IM TA-2880 No.6590-1/5 CPH5506 Electrical Characteristics at Ta=25C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time Symbol ICBO IEBO hFE fT Cob VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO ton tstg tf Conditions VCB=(--)30V, IE=0 VEB=(--)4V, IC=0 VCE=(--)2V, IC=(-)100mA VCE=(--)10V, IC=(--)300mA VCB=(--)10V, f=1MHz IC=(--)750mA, IB=(-)15mA IC=(--)750mA, IB=(-)15mA IC=(--)10A, IE=0 IC=(--)1mA, RBE= IE=(-)10A, IC=0 See specified Test Circuit See specified Test Circuit See specified Test Circuit (-30)40 (-)30 (--)5 35 (115)205 30 200 (450)500 (9)8 (--250)150 (--375)225 (--)0.85 (--)1.2 Rathings min typ max (--)0.1 (--)0.1 560 MHz pF mV V V V V ns ns ns Unit A A Marking : EF Switching Time Test Circuit PW=20s D.C.1% INPUT VR 50 IB1 IB2 RB + 470F VCC=12V OUTPUT Electrical Connection B1 EC B2 RL 16 + 100F VBE= --5V 20IB1= --20IB2=IC=750mA For PNP, the polarity is reversed. C1 C2 --2.0 --1.8 IC -- VCE [PNP] 2.0 1.8 1.6 IC -- VCE 40mA A [NPN] Collector Current, IC -- A Collector Current, IC -- A --1.6 --1.4 --1.2 --1.0 --0.8 --0.6 --0.4 --0.2 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --50mA --40mA --30mA --20mA 30m A 20mA 1.2 1.0 0.8 0.6 0.4 0.2 50m 1.4 8mA 10mA --8mA --10mA --6mA --4mA --2mA 6mA 4mA 2mA IB=0 --0.9 --1.0 IT01673 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 IB=0 0.9 1.0 Collector-to-Emitter Voltage, VCE -- V --1.6 --1.4 Collector-to-Emitter Voltage, VCE -- V 1.6 1.4 IT01674 IC -- VBE [PNP] VCE= --2V IC -- VBE [NPN] VCE=2V Collector Current, IC -- A --1.2 --1.0 --0.8 --0.6 Collector Current, IC -- A 1.2 1.0 0.8 0.6 0.4 0.2 0 Ta=7 5C 25C --25C --0.4 --0.2 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 IT01675 0 0.2 0.4 0.6 Ta=75 C 25C --25C 0.8 1.0 1.2 IT01676 Base-to-Emitter Voltage, VBE -- V Base-to-Emitter Voltage, VBE -- V No.6590-2/5 CPH5506 1000 7 5 hFE -- IC Ta=75C 25C --25C [PNP] VCE= --2V 1000 7 5 hFE -- IC Ta=75C 25C --25C [NPN] VCE=2V DC Current Gain, hFE DC Current Gain, hFE 3 5 7 --0.1 2 3 5 7 --1.0 2 3 3 2 3 2 100 7 5 3 2 100 7 5 3 2 10 --0.01 2 10 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Collector Current, IC -- A 3 2 IT01677 f T -- IC Collector Current, IC -- A 3 IT01678 [PNP] VCE= --10V 2 f T -- IC [NPN] VCE=10V Gain Bandwidth Product, f T -- MHz 1000 7 5 3 2 Gain Bandwidth Product, f T -- MHz 2 3 5 7 --0.1 2 3 5 7 --1.0 2 IT01679 1000 7 5 3 2 100 7 5 3 2 --0.01 100 7 5 3 2 0.01 2 3 5 7 0.1 2 3 5 7 2 1.0 IT01680 Collector Current, IC -- A 100 7 Cob -- VCB Collector Current, IC -- A 100 7 [PNP] f=1MHz Cob -- VCB [NPN] f=1MHz Output Capacitance, Cob -- pF Output Capacitance, Cob -- pF 2 3 5 7 --1.0 2 3 5 7 --10 2 3 5 5 3 2 5 3 2 10 7 5 3 2 --0.1 10 7 5 3 2 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 Collector-to-Base Voltage, VCB -- V --1.0 7 IT01681 Collector-to-Base Voltage, VCB -- V 1.0 7 IT01682 VCE(sat) -- IC [PNP] IC / IB=20 VCE(sat) -- IC [NPN] IC / IB=20 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 3 2 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 5 5 3 2 --0.1 7 5 3 2 0.1 7 5 3 2 Ta C =75 C --25 5 7 --0.1 25 C C 75 Ta= C --25 2 3 5 7 0.1 25 C --0.01 --0.01 2 3 2 3 5 7 --1.0 2 3 0.01 0.01 2 3 5 7 1.0 2 3 Collector Current, IC -- A IT01683 Collector Current, IC -- A IT01684 No.6590-3/5 CPH5506 2 --1.0 7 5 3 2 --0.1 7 5 3 2 VCE(sat) -- IC [PNP] IC / IB=50 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 1.0 7 5 3 2 VCE(sat) -- IC [NPN] IC / IB=50 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 0.1 7 5 3 2 75C Ta= --25 C 2 5C 75 2 Ta= -- C 5C 25 C --0.01 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 0.01 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Collector Current, IC -- A --10 7 IT01685 VBE(sat) -- IC Collector Current, IC -- A 10 7 IT01686 [PNP] IC / IB=50 Base-to-Emitter Saturation Voltage, VBE(sat) -- V VBE(sat) -- IC [NPN] IC / IB=50 Base-to-Emitter Saturation Voltage, VBE(sat) -- V 5 3 2 5 3 2 --1.0 7 5 3 2 Ta= --25C 1.0 7 5 3 2 Ta= --25C 75C 25C 75C 25C --0.1 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 0.1 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Collector Current, IC -- A IT01687 ASO Collector Current, IC -- A 1.4 IT01688 [PNP / NPN] 10s 10 7 5 3 PC -- Ta [PNP / NPN] ICP=5A 1m s 1.2 Collector Current, IC -- A 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 IC=1.5A 10 Collector Dissipation, PC -- W 10 0 s 50 0 DC 1 op 00m er s ati on ms 1.0 0.9 0.8 Ta=25C Single pulse Mounted on a ceramic board(600mm2!0.8mm) For PNP, minus sign is omitted 2 3 5 7 1.0 2 3 5 7 10 2 3 s 7 100 IT02363 5 To t al 0.6 1u nit Di ss ip ati on 0.4 0.2 0 Mounted on a ceramic board(600mm2!0.8mm) 0 20 40 60 80 100 120 140 160 0.1 1.0 Collector-to-Emitter Voltage, VCE -- V PC(TR2) -- PC(TR1) [PNP / NPN] Ambient Temperature, Ta -- C IT02364 Collector Dissipation, PC(TR2) -- W 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 Mounted on a ceramic board(600mm2!0.8mm) 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Collector Dissipation, PC(TR1) -- W IT02365 No.6590-4/5 CPH5506 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of July, 2000. Specifications and information herein are subject to change without notice. PS No.6590-5/5 |
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