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| Gabellichtschranken Slotted Interrupters Vorlaufige Daten / Preliminary Data Pin 2 Pin 3 SFH 9305 Pin 1 Pin 4 12.02 0.2 3.28 0.2 optical axis 6.2 0.2 6.25 0.2 4.37 0.1 15.75 0.2 1 0.2 0.4 0.1 8.55 0.1 18.45 0.2 9.3 0.2 1.27 0.1 3 0.1 0.66 0.1 2.54 3.5 0.4 (13.1) (0.5) 1 Circuitry 4 Emitter Sensor 2 3 GPX06996 Mae in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale q Kompaktes Gehause q GaAs-IR-Sendediode (940 nm) q Si-Fototransistor mit Tageslichtsperrfilter q Gehause mit SFH 4110 und SFH 3100 F als Basiskomponenten Features q Compact type q GaAs infrared emitter (940 nm) q Silicon phototransistor detector with daylight-cutoff filter q Package using SFH 4110 and SFH 3100 F as basic components Applications q Speed control q Motor control q Monitoring of paper feed in printers, copiers, facsimiles q Disk drives q Control of print head in printers q Coin detection q Optoelectronic switches 1 1998-10-14 Anwendungen q Geschwindigkeitsuberwachung q Motorsteuerung q Uberwachung des Papiervorschubs in Druckern, Kopier- und Faxgeraten q Speicherlaufwerke q Steuerung des Druckkopfes in Druckern q Munzdetektion q Optoelektronische Schalter Semiconductor Group fpx06996 SFH 9305 SFH 9305 Typ Type SFH 9305 Bestellnummer Ordering Code on request Gehause Package Schwarzes Polykarbonat Plastikgehause, Anschlusse im 2.54-mm Raster, Senderseite durch Buchstaben E", Empfangerseite durch Buchstaben S" gekennzeichnet. Black polycarbonate plastic material housing, solder tabs 2.54-mm (1/10") spacing, emitter side marked with letter "E", sensor side marked with letter "S". Grenzwerte TA = 25 C Maximum Ratings Bezeichnung Description Sender (GaAs-Diode) Emitter (GaAs Diode) Sperrspannung Reverse voltage Durchlastrom Forward current Verlustleistung Power dissipation Warmewiderstand Thermal resistance Empfanger (Si-Fototransistor) Detector (Silicon Phototransistor) Kollektor-Emitter-Spannung Collector-emitter voltage Kollektor-Emitter-Spannung, (t 2 min) Collector-emitter voltage, (t 2 min) Emitter-Kollektor-Spannung Emitter-collector voltage Kollektorstrom Collector current Verlustleistung Total power dissipation Warmewiderstand Thermal resistance Symbol Symbol Wert Value Einheit Unit VR IF (DC) Ptot RthJA 5 60 100 280 V mA mW K/W VCE VCE VEC IC Ptot RthJA 30 70 7 50 150 280 V mA mW K/W Semiconductor Group 2 1998-10-14 SFH 9305 Grenzwerte TA = 25 C (cont'd) Maximum Ratings Bezeichnung Description Gabellichtschranke Slotted Interrupter Lagertemperatur Storage temperature range Betriebstemperatur Operating temperature range Elektrostatische Entladung Electrostatic discharge Symbol Symbol Wert Value Einheit Unit Tstg Top ESD - 40 ... + 85 - 40 ... + 85 2 C kV Kennwerte TA = 25 C Characteristics Bezeichnung Description Sender (GaAs-Diode) Emitter (GaAs Diode) Wellenlange der Strahlung Wavelength of peak emission Durchlaspannung Forward voltage IF = 20 mA, tp = 20 ms Sperrstrom Reverse current VR = 5 V Kapazitat Capacitance VR = 0 V, f = 1 MHz Symbol Symbol Wert Value Einheit Unit peak VF 940 1.2 ( 1.4) nm V IR 0.01 ( 1) A C0 16 pF Semiconductor Group 3 1998-10-14 SFH 9305 Kennwerte TA = 25 C (cont'd) Characteristics Bezeichnung Description Empfanger (Si-Fototransistor) Detector (Silicon Phototransistor) Wellenlange der max. Fotoempfindlichkeit Wavelength of max. sensitivity Spectr. Bereich der Fotoempfindlichkeit Spectral range of sensitivity S = 10 % of Smax Kapazitat Capacitance VCE = 0 V, f = 1 MHz, E = 0 Dunkelstrom Dark current VCE = 20 V Gabellichtschranke Slotted interrupter Kollektor-Emitterstrom Collector-emitter current IF = 20 mA; VCE = 5 V Kollektor-Emitter-Sattigungsspannung Collector-emitter-saturation voltage IF = 20 mA; IC = 0.2 mA Anstiegs- und Abfallzeit Rise and fall time VCC = 5 V, IC = 1 mA, RL = 1 k Symbol Symbol Wert Value Einheit Unit S max 920 840 ... 1080 nm nm CCE 6.5 pF ICEO 2 ( 50) nA ICE min. ICE typ. VCE sat > 0.7 mA 0.4 V tr tf 13 17 s s Lothinweise Soldering conditions Bauform Type Tauch-, Schwalllotung Dip, wave soldering Peak temp. (solderbath) SFH 9305 260 C Max. time in peak zone 10 s Reflowlotung Reflow soldering Peak temp. (package temp.) n. a. Max. time in peak zone _ Kolbenlotung Iron soldering (Iron temp.) 300 C < 5 s Semiconductor Group 4 1998-10-14 SFH 9305 Forward current IF = f (VF) Single pulse, tp = 20 s F 10 4 mA 10 3 OHFD00367 Max. permissible forward current IF = f (TA) 90 OHF00372 Dark current ICEO= f (TA) VCE = 20 V, E = 0 CEO 10 3 nA OHF00380 F mA 70 10 2 R thJA = 280 K/W 60 50 40 10 2 10 1 10 1 10 0 30 10 0 10 -1 20 10 10 -2 0 0.5 1 1.5 2 2.5 3 V VF 4 0 10 -1 0 20 40 60 80 C TA 120 0 20 40 60 80 C 100 TA Total power dissipation for emitter and detector Ptot= f (TA) 160 OHF00410 Detector P tot 140 120 100 80 60 40 20 0 Emitter 0 20 40 60 80 C 100 TA Semiconductor Group 5 1998-10-14 |
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