View IRFP250_325044.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

IRFP250
Data Sheet July 1999 File Number
2330.3
33A, 200V, 0.085 Ohm, N-Channel Power MOSFET
This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA9295.
Features
* 33A, 200V * rDS(ON) = 0.085 * Single Pulse Avalanche Energy Rated * SOA is Power Dissipation Limited * Nanosecond Switching Speeds * Linear Transfer Characteristics * High Input Impedance * Related Literature - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"
Ordering Information
PART NUMBER IRFP250 PACKAGE TO-247 BRAND IRFP250
Symbol
D
NOTE: When ordering, use the entire part number.
G
S
Packaging
JEDEC STYLE TO-247
SOURCE DRAIN GATE
DRAIN (TAB)
4-323
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright (c) Intersil Corporation 1999
IRFP250
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified IRFP250 200 200 33 21 130 20 180 1.44 810 -55 to 150 300 260 UNITS V V A A A V W W/oC mJ oC
oC oC
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE: 1. TJ = 25oC to 125oC.
Electrical Specifications
PARAMETER
TC = 25oC, Unless Otherwise Specified SYMBOL BVDSS VGS(TH) IDSS ID(ON) IGSS rDS(ON) gfs td(ON) tr td(OFF) tf Qg(TOT) Qgs Qgd CISS COSS CRSS LD Measured from the Contact Screw on Header Closer to Source and Gate Pins to Center of Die Measured from the Source Lead, 6.0mm (0.25in) from Header to Source Bonding Pad Modified MOSFET Symbol Showing the Internal Device Inductances
D LD G LS S
TEST CONDITIONS ID = 250A, VGS = 0V (Figure 10) VGS = VDS, ID = 250A VDS = Rated BVDSS, VGS = 0V VDS = 0.8 x Rated BVDSS, VGS = 0V, TC = 125oC VDS > ID(ON) x rDS(ON)MAX, VGS = 10V VGS = 20V ID = 17A, VGS = 10V (Figures 8, 9) VDS 50V, ID = 17A (Figure 12) VDD = 100V, ID = 30A, RGS = 6.2, VGS = 10V, RL = 3.2 MOSFET Switching Times are Essentially Independent of Operating Temperature VGS = 10V, ID = 30A, VDS = 0.8 x Rated BVDSS, IG(REF) = 1.5mA (Figure 14) Gate Charge is Essentially Independent of Operating Temperature VDS = 25V, VGS = 0V, f = 1MHz (Figure 11)
MIN 200 2.0 33 13 -
TYP 0.07 19 18 125 70 80 79 12 42 2000 800 300 5.0
MAX 4.0 25 250 100 0.085 30 180 100 120 120 -
UNITS V V A A A nA S ns ns ns ns nC nC nC pF pF pF nH
Drain to Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current
On-State Drain Current (Note 2) Gate to Source Leakage Current Drain to Source On Resistance (Note 2) Forward Transconductance (Note 2) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge (Gate to Source + Gate to Drain) Gate to Source Charge Gate to Drain "Miller" Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Internal Drain Inductance
Internal Source Inductance
LS
-
12.5
-
nH
Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient
RJC RJA Free Air Operation
-
-
0.70 30
oC/W oC/W
4-324
IRFP250
Source to Drain Diode Specifications
PARAMETER Continuous Source to Drain Current Pulse Source to Drain Current (Note 3) SYMBOL ISD ISDM TEST CONDITIONS Modified MOSFET Symbol Showing the Integral Reverse P-N Junction Rectifier
G D
MIN -
TYP -
MAX 33 130
UNITS A A
S
Source to Drain Diode Voltage (Note 2) Reverse Recovery Time Reverse Recovery Charge NOTES:
VSD trr QRR
TJ = 25oC, ISD = 33A, VGS = 0V (Figure 13) TJ = 25oC, ISD = 30A, dISD/dt = 100A/s TJ = 25oC, ISD = 30A, dISD/dt = 100A/s
140 1.8
-
2.0 630 8.1
V ns C
2. Pulse test: pulse width 300s, duty cycle 2%. 3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3). 4. VDD = 50V, starting TJ = 25oC, L = 1.1mH, RG = 50, peak IAS = 33A.
Typical Performance Curves
1.2 POWER DISSIPATION MULTIPLIER 1.0
Unless Otherwise Specified
40
0.8 0.6 0.4 0.2 0
ID, DRAIN CURRENT (A) 0 50 100 150
32
24
16
8
0 25
50
75
100
125
150
TC, CASE TEMPERATURE (oC)
TC , CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE
1 ZJC , THERMAL IMPEDANCE 0.5 0.2 0.1 0.1 0.05 0.02 0.01 PDM
10-2
SINGLE PULSE
10-3 10-5
t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC + TC 10-4 0.1 10-3 10-2 t1, RECTANGULAR PULSE DURATION (s) 1 10
FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE
4-325
IRFP250 Typical Performance Curves
103 OPERATION IN THIS AREA IS LIMITED BY rDS(ON) ID, DRAIN CURRENT (A) 102
Unless Otherwise Specified
(Continued)
50 VGS = 10V VGS = 7V ID, DRAIN CURRENT (A) 10s 40
PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX
100s 10 1ms 10ms 1 TJ = MAX RATED TC = 25oC SINGLE PULSE 1 10 102 VDS , DRAIN TO SOURCE VOLTAGE (V) 103 DC
30
VGS = 6V
20
10
VGS = 5V VGS = 4V
0.1
0
0
20
40
60
80
100
VDS , DRAIN TO SOURCE VOLTAGE (V)
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. OUTPUT CHARACTERISTICS
50 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX ID, DRAIN CURRENT (A) 40 VGS = 10V VGS = 8V VGS = 7V 30 VGS = 6V ID, DRAIN CURRENT (A)
102
PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX VDS 50V
10
20
TJ = 150oC 1
TJ = 25oC
10
VGS = 5V VGS = 4V 0 1 2 3 4 5
0 VDS , DRAIN TO SOURCE VOLTAGE (V)
0.1
0
2 4 6 8 VGS , GATE TO SOURCEVOLTAGE (V)
10
FIGURE 6. SATURATION CHARACTERISTICS
FIGURE 7. TRANSFER CHARACTERISTICS
0.5 rDS(ON), ON-STATE RESISTANCE ()
3.0 NORMALIZED DRAIN TO SOURCE ON RESISTANCE PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX
0.4
2.4
PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX ID = 17A, VGS = 10V
0.3
1.8
0.2
VGS = 10V
1.2
0.1
VGS = 20V
0.6
0
0 0 25 50 75 ID, DRAIN CURRENT (A) 100 125 -40 0 40 80 120 160 TJ , JUNCTION TEMPERATURE (oC)
NOTE: Heating effect of 2s pulse is minimal. FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE
4-326
IRFP250 Typical Performance Curves
1.25 NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE ID = 250A C, CAPACITANCE (pF)
Unless Otherwise Specified
(Continued)
7500 VGS = 0V, f = 1MHz CISS = CGS + CGD 6000 CRSS = CGD COSS CDS + CGD 4500
1.15
1.05
CISS
0.95
3000 COSS 1500 CRSS
0.85
0.75 -40 0 40 80 120 160 TJ , JUNCTION TEMPERATURE (oC)
0
1
2 5 10 2 5 VDS , DRAIN TO SOURCE VOLTAGE (V)
102
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
25 gfs, TRANSCONDUCTANCE (S) TJ = 25oC ISD, SOURCE TO DRAIN CURRENT (A) PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX VDS 50V
103
PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX
20
102
15
TJ = 150oC
10
10
TJ = 150oC
TJ = 25oC
5
0
1 0 10 20 30 ID, DRAIN CURRENT (A) 40 50
0
0.5 1.0 1.5 VSD, SOURCE TO DRAIN VOLTAGE (V)
2.0
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
20
ID = 30A VDS = 160V VDS = 100V VDS = 40V
VGS, GATE TO SOURCE (V)
16
12
8
4
0
0
25
50
75
100
125
Qg , GATE CHARGE (nC)
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
4-327
IRFP250 Test Circuits and Waveforms
VDS tP IAS VARY tP TO OBTAIN REQUIRED PEAK IAS VGS DUT tP RG
+
BVDSS L VDS VDD
-
VDD
0V
IAS 0.01
0 tAV
FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 16. UNCLAMPED ENERGY WAVEFORMS
tON td(ON) tr VDS RL 90%
tOFF td(OFF) tf 90%
+
RG DUT
-
VDD
0
10% 90%
10%
VGS 0 10%
50% PULSE WIDTH
50%
VGS
FIGURE 17. SWITCHING TIME TEST CIRCUIT
FIGURE 18. RESISTIVE SWITCHING WAVEFORMS
CURRENT REGULATOR
VDS (ISOLATED SUPPLY)
VDD Qg(TOT) VGS
12V BATTERY
0.2F
50k 0.3F
SAME TYPE AS DUT Qgs
Qgd
D G DUT 0
VDS
IG(REF) 0 IG CURRENT SAMPLING RESISTOR
S VDS ID CURRENT SAMPLING RESISTOR
IG(REF) 0
FIGURE 19. GATE CHARGE TEST CIRCUIT
FIGURE 20. GATE CHARGE WAVEFORMS
4-328
IRFP250
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
Sales Office Headquarters
NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (407) 724-7000 FAX: (407) 724-7240 EUROPE Intersil SA Mercure Center 100, Rue de la Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 ASIA Intersil (Taiwan) Ltd. 7F-6, No. 101 Fu Hsing North Road Taipei, Taiwan Republic of China TEL: (886) 2 2716 9310 FAX: (886) 2 2715 3029
4-329

▲Up To Search▲

Price & Availability of IRFP250

	To Download IRFP250 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .