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| HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S20N35G3VLS April 1995 20A, 350V N-Channel, Logic Level, Voltage Clamping IGBTs Packages JEDEC TO-220AB EMITTER COLLECTOR GATE COLLECTOR (FLANGE) Features * Logic Level Gate Drive * Internal Voltage Clamp * ESD Gate Protection * TJ = 175oC * Ignition Energy Capable Description This N-Channel IGBT is a MOS gated, logic level device which is intended to be used as an ignition coil driver in automotive ignition circuits. Unique features include an active voltage clamp between the collector and the gate which provides Self Clamped Inductive Switching (SCIS) capability in ignition circuits. Internal diodes provide ESD protection for the logic level gate. Both a series resistor and a shunt resistor are provided in the gate circuit. PACKAGING AVAILABILITY PART NUMBER HGTP20N35G3VL HGT1S20N35G3VL HGT1S20N35G3VLS PACKAGE T0-220AB T0-262AA T0-263AB BRAND 20N35GVL 20N35GVL 20N35GVL COLLECTOR (FLANGE) JEDEC TO-262AA EMITTER COLLECTOR GATE JEDEC TO-263AB M A A COLLECTOR (FLANGE) A GATE EMITTER Terminal Diagram N-CHANNEL ENHANCEMENT MODE COLLECTOR NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in the tape and reel, i.e., HGT1S20N35G3VLS9A. The development type number for this device is TA49076. R1 GATE R2 EMITTER Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified HGTP20N35G3VL HGT1S20N35G3VL HGT1S20N35G3VLS 375 24 20 20 10 26 18 775 150 1.0 -40 to +175 260 6 Collector-Emitter Bkdn Voltage At 10mA, RGE = 1k. . . . . . . . . . . . . . . . . . . . . . . BVCER Emitter-Collector Bkdn Voltage At 10mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVECS Collector Current Continuous At VGE = 5.0V, TC = +25oC, Figure 7 . . . . . . . . . . . . . IC25 At VGE = 5.0V, TC = +100oC . . . . . . . . . . . . . . . . . . . .IC100 Gate-Emitter-Voltage (Note) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES Inductive Switching Current At L = 2.3mH, TC = +25o C . . . . . . . . . . . . . . . . . . . . . ISCIS At L = 2.3mH, TC = +175oC . . . . . . . . . . . . . . . . . . . . . ISCIS Collector to Emitter Avalanche Energy At L = 2.3mH, TC = +25oC . . . . . . . . . . . . . . EAS Power Dissipation Total At TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Power Dissipation Derating TC > +25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . .TJ, TSTG Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL Electrostatic Voltage at 100pF, 1500 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ESD NOTE: May be exceeded if IGEM is limited to 10mA. CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright (c) Intersil Corporation 1999 UNITS V V A A V A A mJ W W/oC oC oC KV File Number 4006 3-66 Specifications HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S20N35G3VLS Electrical Specifications TC = +25oC, Unless Otherwise Specified LIMITS PARAMETERS Collector-Emitter Breakdown Voltage SYMBOL BVCES TEST CONDITIONS IC = 10mA, VGE = 0V TC = +175oC TC = +25oC TC = -40oC Collector-Emitter Breakdown Voltage BVCER IC = 10mA VGE = 0V RGE = 1k TC = +175oC TC = +25oC TC = -40oC Gate-Emitter Plateau Voltage VGEP IC = 10A VCE = 12V IC = 10A VGE = 5V VCE = 12V IC = 10A RG = 0 IC = 10mA VCE = 250V VCE = 250V Collector-Emitter Saturation Voltage VCE(SAT) IC = 10A VGE = 4.5V TC = +25oC TC = +25oC MIN 310 320 320 300 315 315 TYP 345 350 355 340 345 350 3.7 MAX 380 380 390 375 375 390 UNITS V V V V V V V Gate Charge QG(ON) - 28.7 - nC Collector-Emitter Clamp Bkdn. Voltage BVCE(CL) TC = +175oC TC = +25oC TC = +25oC TC = +175oC TC = +25oC TC = +175oC TC = +25oC TC = +175oC TC = +25oC TC = +25oC TC = +25oC 325 360 395 V Emitter-Collector Breakdown Voltage Collector-Emitter Leakage Current BVECS ICES 20 1.3 32 1.3 1.25 1.6 1.9 1.8 5 250 1.6 1.5 2.8 3.5 2.3 V A A V V V V V IC = 20A VGE = 5.0V Gate-Emitter Threshold Voltage VGE(TH) IC = 1mA VCE = VGE Gate Series Resistance Gate-Emitter Resistance Gate-Emitter Leakage Current Gate-Emitter Breakdown Voltage Current Turn-Off Time-Inductive Load R1 R2 IGES BVGES tD(OFF)I + tF(OFF)I VGE = 10V IGES = 2mA 10 400 12 - 1.0 17 590 14 15 25 1000 30 k k A V s IC = 10A, RG = 25, L = 550 H, R L = 26.4, VGE = 5V, VCL = 300V, TC = +175oC L = 2.3mH, VG = 5V, RG = 0 TC = +175oC TC = +25oC Inductive Use Test ISCIS 18 26 - - 1.0 A A oC/W Thermal Resistance RJC 3-67 HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S20N35G3VLS Typical Performance Curves PULSE DURATION = 250s, DUTY CYCLE <0.5%, VCE = 10V ICE, COLLECTOR-EMITTER CURRENT (A) ICE, COLLECTOR-EMITTER CURRENT (A) 50 100 VGE=10V 80 7V 6.5V 6.0V 5.5V 5.0V 60 4.5V 40 4.0V 3.5V 20 3.0V 2.5V 0 0 2 4 6 8 10 PULSE DURATION = 250s, DUTY CYCLE <0.5%, TC = +25oC 40 30 TC = +175oC 20 TC = +25oC TC = 10 -40oC 0 1 2 3 4 5 6 VGE, GATE-TO-EMITTER VOLTAGE (V) VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 1. TRANSFER CHARACTERISTICS FIGURE 2. SATURATION CHARACTERISTICS ICE , COLLECTOR EMITTER CURRENT (A) ICE , COLLECTOR EMITTER CURRENT (A) 40 TC = +175oC VGE = 5.0V 50 VGE = 4.5V 40 -40oC +25oC 30 VGE = 4.5V 30 +175oC 20 VGE = 4.0V 10 20 10 0 0 0 1 2 3 4 5 VCE(SAT) , SATURATION VOLTAGE (V) 0 2 3 VCE(SAT) , SATURATION VOLTAGE (V) 1 4 FIGURE 3. COLLECTOR-EMITTER CURRENT AS A FUNCTION OF SATURATION VOLTAGE FIGURE 4. COLLECTOR-EMITTER CURRENT AS A FUNCTION OF SATURATION VOLTAGE 1.4 VCE(SAT) , SATURATION VOLTAGE (V) VCE(SAT) , SATURATION VOLTAGE (V) ICE = 10A VGE = 4.0V 2.2 ICE = 20A 2.1 2.0 1.9 1.8 1.7 1.6 1.5 VGE = 4.5V 5.0V VGE = 4.5V VGE = 4.0V 1.3 VGE = 4.5V 1.2 VGE = 5.0V 1.1 -25 +25 +75 +125 +175 TJ , JUNCTION TEMPERATURE (oC) -25 +25 +75 +125 +175 TJ , JUNCTION TEMPERATURE (oC) FIGURE 5. SATURATION VOLTAGE AS A FUNCTION OF JUNCTION TEMPERATURE FIGURE 6. SATURATION VOLTAGE AS A FUNCTION OF JUNCTION TEMPERATURE 3-68 HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S20N35G3VLS Typical Performance Curves (Continued) VTH, NORMAILZED THRESHOLD VOLTAGE ICE, COLLECTOR-EMITTER CURRENT (A) 25 VGE = 5.0V 20 PACKAGE LIMITED 15 1.2 ICE = 1mA 1.1 1.0 0.9 0.8 0.7 0.6 0.5 -25 +25 +75 +125 +175 TJ , JUNCTION TEMPERATURE (oC) 10 5 0 +25 +50 +75 +100 +125 +150 +175 TC, CASE TEMPERATURE (oC) FIGURE 7. COLLECTOR-EMITTER CURRENT AS A FUNCTION OF CASE TEMPERATURE FIGURE 8. NORMALIZED THRESHOLD VOLTAGE AS A FUNCTION OF JUNCTION TEMPERATURE 105 104 LEAKAGE CURRENT ( A) 103 102 101 VCES = 250V 100 10-1 +25 +50 +75 +100 +125 +150 +175 TJ , JUNCTION TEMPERATURE (oC) VECS = 20V 18 VCL= 300V, RGE = 25, VGE = 5V, L= 550 H t(OFF)I, TURN OFF TIME ( s) 16 ICE = 6A, RL= 50 14 ICE =10A, RL= 30 12 ICE =15A, RL= 20 10 +25 +50 +75 +100 +125 +150 +175 TJ , JUNCTION TEMPERATURE (oC) FIGURE 9. LEAKAGE CURRENT AS A FUNCTION OF JUNCTION TEMPERATURE 45 40 35 30 25 20 15 +175oC 10 5 0 2 4 6 8 10 +25oC FIGURE 10. TURN-OFF TIME AS A FUNCTION OF JUNCTION TEMPERATURE ICE , COLLECTOR-EMITTER CURRENT (A) VGE = 5V 1200 VGE = 5V 1000 EAS , ENERGY (mJ) +25oC 800 600 400 +175oC 200 0 2 4 6 8 10 INDUCTANCE (mH) INDUCTANCE (mH) FIGURE 11. SELF CLAMPED INDUCTIVE SWITCHING CURRENT AS A FUNCTION OF INDUCTANCE FIGURE 12. SELF CLAMPED INDUCTIVELY SWITCHING ENERGY AS A FUNCTION OF INDUCTANCE 3-69 HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S20N35G3VLS Typical Performance Curves (Continued) VCE, COLLECTOR-EMITTER VOLTAGE (V) 1600 FREQUENCY = 1MHz 1400 C, CAPACITANCE (pF) 1200 1000 800 600 400 200 CRES 0 20 10 15 VCE , COLLECTOR-TO-EMITTER VOLTAGE (V) 5 25 COES CIES IG REF = 1.022mA, RL = 1.2, TC = +25oC 12 10 VCE = 12V 8 6 VCE = 4V 4 2 1 0 0 10 20 QG, GATE CHARGE (nC) 30 40 4 3 6 5 VGE, GATE-EMITTER VOLTAGE (V) VCE = 8V 2 0 FIGURE 13. CAPACITANCE AS A FUNCTION OF COLLECTOREMITTER VOLTAGE FIGURE 14. GATE CHARGE WAVEFORMS ZJC , NORMALIZED THERMAL RESPONSE 100 0.5 0.2 PD 10-1 0.1 0.05 0.02 0.01 DUTY FACTOR, D = t1 / t2 PEAK TJ = (PD X ZJC X RJC) + TC t2 t1 BVCER , COLLECTOR-EMITTER BKDN VOLTAGE (V) 350 ICER = 10mA 345 TC = +25oC AND +175oC 340 10-2 10-5 SINGLE PULSE 335 10-3 10-1 101 0 2000 4000 6000 8000 10000 t1 , RECTANGULAR PULSE DURATION (s) RGE , GATE-TO-EMITTER RESISTANCE (V) FIGURE 15. NORMALIZED TRANSIENT THERMAL IMPEDANCE, JUNCTION TO CASE FIGURE 16. BREAKDOWN VOLTAGE AS A FUNCTION OF GATE - EMITTER RESISTANCE Test Circuits RL 2.3mH VDD C 1/RG = 1/RGEN + 1/RGE RGEN = 50 10V E RGE = 50 E G DUT + VCC 300V L = 550H C RGEN = 25 5V RG DUT G - FIGURE 17. USE TEST CIRCUIT FIGURE 18. INDUCTIVE SWITCHING TEST CIRCUIT 3-70 HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S20N35G3VLS All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site www.intersil.com Sales Office Headquarters NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (321) 724-7000 FAX: (321) 724-7240 EUROPE Intersil SA Mercure Center 100, Rue de la Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 ASIA Intersil (Taiwan) Ltd. 7F-6, No. 101 Fu Hsing North Road Taipei, Taiwan Republic of China TEL: (886) 2 2716 9310 FAX: (886) 2 2715 3029 Spec Number 3-71 |
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