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| SOT89 PNP SILICON POWER (SWITCHING) TRANSISTOR ISSSUE 1 - SEPTEMBER 1999 FEATURES FCX1149A C * * * * * 2W POWER DISSIPATION 20A Peak Pulse Current Excellent HFE Characteristics up to 10 Amps Extremely Low Saturation Voltage E.g. 45mv Typ. Extremely Low Equivalent On-resistance; RCE(sat)67mat 3A E C B Partmarking Detail - 149 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current ** Continuous Collector Current Base Current Power Dissipation at Tamb=25C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC IB Ptot Tj:Tstg VALUE -30 -25 -5 -10 -3 -500 1 2 -55 to +150 UNIT V V V A A mA W W C recommended Ptot calculated using FR4 measuring 15x15x0.6mm Maximum power dissipation is calculated assuming that the device is mounted on FR4 substrate measuring 40x40x0.6mm and using comparable measurement methods adopted by other suppliers. **Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% Spice parameter data is available upon request for these devices. Refer to the handling instructions for soldering surface mount components. FCX1149A ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). VALUE PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector Emitter Cut-Off Current Collector-Emitter Saturation Voltage SYMBOL MIN. V(BR)CBO V(BR)CES V(BR)CEO V(BR)CEV V(BR)EBO ICBO IEBO ICES VCE(sat) -30 -25 -25 -25 -5 -0.3 -0.3 -0.3 -45 -100 -140 -200 -230 -930 -840 270 250 150 115 450 400 260 190 50 135 50 150 270 -100 -100 -100 -80 -170 -240 -300 -350 -1050 -1000 TYP. MAX. V V V V V nA nA nA mV mV mV mV mV mV mV IC=-100A IC=-100A IC=-10mA* IC=-100A, VEB=+1V IE=-100A VCB=-24V VEB=-4V VCES=-20V IC=-0.1A, IB=-1mA* IC=-0.5A, IB=-3mA* IC=-1A, IB=-7mA* IC=-3A, IB=-100mA* IC=-4A, IB=-140mA* IC=-3A, IB=-100mA* IC=-3A, VCE=-2V* IC=-10mA, VCE=-2V* IC=-0.5A, VCE=-2V* IC=-3.0A, VCE=-2V* IC=-5.0A, VCE=-2V* IC=-10.0A, VCE=-2V* MHz pF ns ns 2% IC=-50mA, VCE=-10V f=50MHz VCB=-10V, f=1MHz IC=-4A, IB=-40mA, VCC=-10V IC=-4A, IB=40mA, VCC=-10V UNIT CONDITIONS. Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio VBE(sat) VBE(on) hFE 800 Transition Frequency Output Capacitance Switching Times fT Ccb ton toff *Measured under pulsed conditions. Pulse width=300s. Duty cycle FCX1149A TYPICAL CHARACTERISTICS 1.0 +25C 1.0 IC/IB=100 0.8 0.8 IC/IB=10 IC/IB=50 IC/IB=100 IC/IB=200 VCE(sat) - (V) VCE(sat) - (V) 0.6 0.6 -55C +25C +100C 0.4 0.4 0.2 0.2 0 1m 10m 100m 1 10 100 0 1m 10m 100m 1 10 100 IC - Collector Current (A) IC - Collector Current (A) VCE(sat) v IC VCE(sat) v IC 750 VCE=2V 1.6 IC/IB=100 hFE - Typical Gain VBE(sat) - (V) 500 +100C +25C -55C 1.2 0.8 250 0.4 -55C +25C +100C 0 1m 10m 100m 1 10 100 0 1m 10m 100m 1 10 100 IC - Collector Current (A) IC - Collector Current (A) hFE v IC VBE(sat) v IC 1.2 VCE=2V 10 VBE(on) - (V) 0.8 IC - Collector Current (A) 1 DC 1s 100ms 10ms 1ms 100us 0.4 -55C +25C +100C 100m 0 1m 10m 100m 1 10 100 10m 100m 1 10 100 IC - Collector Current (A) VCE - Collector Emitter Voltage (V) VBE(on) v IC Safe Operating Area |
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