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| SFH 302 NPN-Silizium-Fototransistor Silicon NPN Phototransistor SFH 302 Mae in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified Wesentliche Merkmale q Speziell geeignet fur Anwendungen im Bereich von 450 nm bis 1100 nm q Hohe Linearitat q TO-18, Bodenplatte, klares EpoxyGieharz, mit Basisanschlu q Gruppiert lieferbar Anwendungen q Lichtschranken fur Gleich- und Wechsellichtbetrieb q Industrieelektronik q "Messen/Steuern/Regeln" Features q Especially suitable for applications from 450 nm to 1100 nm q High linearity q TO-18, base plate, transparent exposy resin lens, with base connection q Available in groups Applications q Photointerrupters q Industrial electronics q For control and drive circuits Typ Type SFH 302 SFH 302-2 SFH 302-3 SFH 302-4 SFH 302-5 SFH 302-6 Bestellnummer Ordering Code Q62702-P1641 Q62702-P1623 Q62702-P1624 Q62702-P1625 Q62702-P1626 Q62702-P1627 Semiconductor Group 252 10.95 fet06017 SFH 302 Grenzwerte Maximum Ratings Bezeichnung Description Betriebs- und Lagertemperatur Operating and storage temperature range Lottemperatur bei Tauchlotung Lotstelle 2 mm vom Gehause, Lotzeit t 5 s Dip soldering temperature 2 mm distance from case bottom, soldering time t 5 s Lottemperatur bei Kolbenlotung Lotstelle 2 mm vom Gehause, Lotzeit t 3 s Iron soldering temperature 2 mm distance from case bottom, soldering time t 3 s Kollektor-Emitterspannung Collector-emitter voltage Kollektorstrom Collector current Kollektorspitzenstrom, < 10 s Collector surge current Emitter-Basisspannung Emitter-base voltage Verlustleistung, TA = 25 C Total power dissipation Warmewiderstand Thermal resistance Symbol Symbol Wert Value - 40 ... + 80 260 Einheit Unit C C Top; Tstg TS TS 300 C VCE IC ICS VEB Ptot RthJA 50 50 200 7 150 450 V mA mA V mW K/W Semiconductor Group 253 SFH 302 Kennwerte (TA = 25 C, = 950 nm) Characteristics Bezeichnung Description Wellenlange der max. Fotoempfindlichkeit Wavelength of max. sensitivity Spektraler Bereich der Fotoempfindlichkeit S = 10 % von Smax Spectral range of sensitivity S = 10 % of Smax Bestrahlungsempfindliche Flache Radiant sensitive area Abmessung der Chipflache Dimensions of chip area Abstand Chipoberflache zu Gehauseoberflache Distance chip front to case surface Halbwinkel Half angle Fotostrom der Kollektor-Basis-Fotodiode Photocurrent of collector-base photodiode Ee = 0.5 mW/cm2, VCB = 5 V Ev = 1000 Ix, Normlicht/standard light A, VCB = 5 V Kapazitat Capacitance VCE = 0 V, f = 1 MHz, E = 0 VCB = 0 V, f = 1 MHz, E = 0 VEB = 0 V, f = 1 MHz, E = 0 Dunkelstrom Dark current VCE = 10 V, E = 0 Symbol Symbol S max Wert Value 880 450 ... 1100 Einheit Unit nm nm A LxB LxW H 0.675 1x1 0.2 ... 0.8 mm2 mm x mm mm 50 Grad deg. IPCB IPCB 4.2 12.5 A A CCE CCB CEB ICEO 23 39 47 20 ( 200) pF pF pF nA Semiconductor Group 254 SFH 302 Die Fototransistoren werden nach ihrer Fotoempfindlichkeit gruppiert und mit arabischen Ziffern gekennzeichnet. The phototransistors are grouped according to their spectral sensitivity and distinguished by arabian figures. Bezeichnung Description Fotostrom, = 950 nm Photocurrent Ee = 0.5 mW/cm2, VCE = 5 V Ev = 1000 Ix, Normlicht/standard light A VCE = 5 V Anstiegszeit/Abfallzeit Rise and fall time IC = 1 mA, VCC = 5 V, RL = 1 k Kollektor-EmitterSattigungsspannung Collector-emitter saturation voltage IC = IPCEmin1) x 0.3, Ee = 0.5 mW/cm2 Stromverstarkung Current gain Ee = 0.5 mW/cm2, VCE = 5 V 1) 1) Symbol -2 -3 Wert Value -4 -5 -6 Einheit Unit IPCE IPCE 0.4 ... 0.8 0.63 ... 1.25 1 ... 2 1.6 ... 3.2 2.5 mA 1.75 2.8 4.5 7.1 9.5 mA t r, t f 9 11 14 17 20 s VCEsat 200 200 200 200 200 mV IPCE IPCB 140 230 360 570 750 IPCEmin ist der minimale Fotostrom der jeweiligen Gruppe IPCEmin is the min. photocurrent of the specified group Semiconductor Group 255 SFH 302 Relative spectral sensitivity Srel = f () Photocurrent IPCE = f (Ee), VCE = 5 V Total power dissipation Ptot = f (TA) Output characteristics IC = f (VCE), IB = Parameter Directional characteristics Srel = f () Semiconductor Group 256 |
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